KST-9016-000 1
STS9013
NPN Silicon Transistor
Descriptions
• General purpose application.
• Switching application.
Featur es
• Excellent hFE linearity.
• Complementary pair with STS9012
Ordering Information
Type NO. Marking Package Code
STS9013 STS9013 TO-92
Outline Dimensions unit :
mm
S
Se
em
mi
ic
co
on
nd
du
uc
ct
to
or
r
4.5±0.1
4.5±0.1
0.4±0.02
1.27 Typ.
2.54 Typ.
1 2 3
3.45±0.1
2.25±0.1
2.06±0.1
1.20±0.1
0.38
PIN Conne ctions
1. Emitter
2. Bas e
3. Collector
14.0±0.40
KST-9016-000 2
STS9013
Absolute maximum ratings (Ta=25°
°°
°C)
Characteristic Symbol Ratings Unit
Collector-Base vo ltage VCBO 40 V
Collector-Emitter vo ltage VCEO 30 V
Emitter-Base voltage VEBO 5 V
Collector current IC 500 mA
Emitter current IE -500 mA
Collector dissipation PC 625 mW
Junction temperature Tj 150
°C
Storage temperature Tstg -55~150
°C
Electrical Characteristics (Ta=25°
°°
°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Collector cut-off current ICBO V
CB=35, IE=0 - - 0.1
µA
Emitter c ut-off c urren t IEBO V
EB=5V, IC=0 - - 0.1
µA
DC current gain hFE* VCE=1V, IC=50mA 96 - 246 -
Collector- Emitter saturation v olta ge VCE(sat) I
C=100mA, IB=10mA - 0.1 0.25 V
Base- Emitter voltage VBE I
C=100mA, V CE=1V - 0.8 1 V
Transition frequency fT V
CE=6V, IC=20mA 140 - - MHz
Collector output capacitance Cob V
CB=6V, IE=0, f=1MHz - 7.0 - pF
* : hFE Rank / F : 96~135, G : 118~166, H : 144~202, I : 176~246.
KST-9016-000 3
STS9013
Electrical Characteristic Curves
Fig. 4 VCE(SAT) - IC
Fig. 3 IC - VCE
Fig. 2 IC - VBE
Fig. 1 Pc - Ta
Fig. 5 hFE - IC
