APT50M85JVFR 50A 0.085 500V POWER MOS V (R) FREDFET S S Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout. 27 2 T- D G SO "UL Recognized" * Fast Recovery Body Diode * 100% Avalanche Tested * Lower Leakage * Popular SOT-227 Package ISOTOP (R) D FREDFET G * Faster Switching Unless stated otherwise, Microsemi discrete FREDFETs contain a single FREDFET die. This device is made with two parallel FREDFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation. MAXIMUM RATINGS Symbol VDSS ID S All Ratings: TC = 25C unless otherwise specified. Parameter APT50M85JVFR UNIT 500 Volts Drain-Source Voltage 50 Continuous Drain Current @ TC = 25C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous 30 Gate-Source Voltage Transient 40 Total Power Dissipation @ TC = 25C 500 Watts 4 W/C VGSM PD TJ,TSTG 200 Linear Derating Factor Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy EAS -55 to 150 Operating and Storage Junction Temperature Range TL 1 C 300 30 (Repetitive and Non-Repetitive) 1 Single Pulse Avalanche Energy Volts Amps 30 4 mJ 1300 STATIC ELECTRICAL CHARACTERISTICS BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) 500 Volts 50 Amps On State Drain Current 2 (VDS > I D(on) x R DS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.]) TYP MAX 0.085 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 500 UNIT Ohms A Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) 2000 Gate-Source Leakage Current (VGS = 30V, VDS = 0V) 100 nA 4 Volts Gate Threshold Voltage (VDS = VGS, ID = 1mA) 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com 050-5621 Rev A 6 - 2006 Symbol APT50M85JVFR DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions MIN TYP MAX Ciss Input Capacitance VGS = 0V 9000 10800 Coss Output Capacitance VDS = 25V 1240 1740 Crss Reverse Transfer Capacitance f = 1 MHz 500 750 Qg Total Gate Charge VGS = 10V 390 535 Qgs Gate-Source Charge VDD = 0.5 VDSS Qgd Gate-Drain ("Miller ") Charge ID = ID [Cont.] @ 25C 42 170 65 255 VGS = 15V 15 30 t d(on) 3 Turn-on Delay Time tr Rise Time t d(off) Turn-off Delay Time tf VDD = 0.5 VDSS 17 34 ID = ID [Cont.] @ 25C 52 80 RG = 0.6 7 14 TYP MAX Fall Time UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions IS ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 dv/ MIN 50 Continuous Source Current (Body Diode) Peak Diode Recovery dt 200 (Body Diode) (VGS = 0V, IS = -ID [Cont.]) dv/ 5 dt UNIT Amps 1.3 Volts 5 V/ns t rr Reverse Recovery Time (IS = -ID [Cont.], di/dt = 100A/s) Tj = 25C 300 Tj = 125C 600 Q rr Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/s) Tj = 25C 2.5 Tj = 125C 8 IRRM Peak Recovery Current (IS = -ID [Cont.], di/dt = 100A/s) Tj = 25C 16 Tj = 125C 28 ns C Amps THERMAL / PACKAGE CHARACTERISTICS Characteristic Symbol MIN RJC Junction to Case RJA Junction to Ambient TYP MAX 0.25 40 VIsolation RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) Torque Maximum Torque for Device Mounting Screws and Electrical Terminations. 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% 2500 13 D=0.5 0.1 0.2 0.05 0.1 0.05 Note: PDM Z JC, THERMAL IMPEDANCE (C/W) 050-5621 Rev A 6 - 2006 0.3 0.005 0.01 SINGLE PULSE t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC 0.001 10-5 10-4 lb*in 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 2.89mH, R = 25, Peak I = 30A j G L 5 I - -I [Cont.], di/ = 100A/s, V S D DD - VDSS, Tj - 150C, RG = 2.0, dt VR = 200V 0.02 C/W Volts Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.01 UNIT 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION APT50M85JVFR 150 VGS=7V, 10V & 15V 120 6V 90 5.5V 60 5V 30 4.5V ID, DRAIN CURRENT (AMPERES) TJ = +25C 120 TJ = +125C VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE 90 60 TJ = +125C 30 TJ = +25C TJ = -55C 0 0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 50 40 30 20 10 0 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 25 6V 90 5.5V 60 5V 30 4.5V 1.5 V GS NORMALIZED TO = 10V @ 0.5 I [Cont.] D 1.4 1.3 1.2 VGS=10V VGS=20V 1.1 1.0 0.9 0 30 60 90 120 150 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.15 1.10 1.05 1.00 0.95 0.90 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE -50 1.2 2.5 I = 0.5 I [Cont.] D D V GS = 10V 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) VGS=7V 0 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES) TJ = -55C VGS=10V 120 4V 0 4 8 12 16 20 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS 4V 0 0 50 100 150 200 250 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 150 VGS=15V 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 050-5621 Rev A 6 - 2006 ID, DRAIN CURRENT (AMPERES) 150 APT50M85JVFR ID, DRAIN CURRENT (AMPERES) 30,000 Ciss C, CAPACITANCE (pF) 10,000 Graph removed 5,000 Coss Crss 1,000 500 100 .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 20 IDR, REVERSE DRAIN CURRENT (AMPERES) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA I = I [Cont.] D D VDS=100V 16 VDS=250V 12 VDS=400V 8 4 0 0 150 300 450 600 750 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 200 100 TJ =+150C TJ =+25C 50 10 5 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE SOT-227 (ISOTOP(R)) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 1.95 (.077) 2.14 (.084) * Source 050-5621 Rev A 6 - 2006 30.1 (1.185) 30.3 (1.193) Drain * Source terminals are shorted internally. Current handling capability is equal for either Source terminal. 38.0 (1.496) 38.2 (1.504) * Source Gate Dimensions in Millimeters and (Inches) "UL Recognized" File No. E145592 ISOTOP(R) is a Registered Trademark of SGS Thomson. Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.