MITSUBISHI SEMICONDUCTORS <TRANSI STO R ARRAY>
M54566DP
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY
Jul-2011
PIN CONFIGURATION
DESCRIPTION
M54566DP is seven-circuit collector current sink type
darlington transistor arrays. The circuits are made of PNP
and NPN transistors. Both the semiconductor integrated
circuits perform high-current driving with extremely low
input-current supply.
FEATURES
●High breakdown voltage (BVCEO>50V)
●High-current driving (Ic(max) = 400mA)
●Active L-level input
APPLICATIONS
Interfaces between microcomputers and high-voltage,
high-current drive systems, drives of relays and printers,
and MOS-bipolar logic IC interfaces.
FUNCTION
The M54566 is produced by adding PNP transistors to
M54522 inputs. Seven circuits having active L-level inputs
are provided.
Resistance of 8kΩis provided between each input and
PNP transistor base. The input emitters are connected to
VCC pin (pin 9). Output transistor emitters are all
connected to the GND pin (pin 8).
Collector current is 400mA maximum. Collector-emitter
supply voltage is 50V maximu m.
These ICs are optimal for drivers that are driven with N-
MOSIC output and absorb collector current.
Package type 16P2X-B
CIRCUIT DIAGRAM
The seven circuits share the VCC and GND.
The diode, indicated with the dotted line, is parasitic, and
cannot be used. Unit:Ω
mA400Current per circuit output, L Collector current
ICV–0.5～VCCInput voltage
VI
℃
–55 ～+ 125Storage temperature Tstg
℃
–20 ～+ 75Operating t emp e ratur e Topr W1.00Ta = 25℃, when mounted on board Power dissipation Pd
V–0.5 ～+ 50Output , H Collector-emitter voltage
VCEO
V10Supply voltageVCC
Unit Ratings Conditions Parameter Symbol
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75℃)
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
→O1
→O2
→O3
→O4
→O5
→O6
→O7
IN1→
IN2→
IN3→
IN4→
IN5→
IN6→
IN7→
GND VCC
OUTPUT
INPUT
VCC
OUTPUT
INPUT 8K
20K
3K
GND
2.7K
7.2K
MITSUBISHI SEMICONDUCTORS <TRANSI STO R ARRAY>
M54566DP
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY
Jul-2011
2
V50
－
0
Output voltageVODuty Cycle
no more than 6%
VVCC－3
－
0
“L” input voltage VIL
VVCC
－
VCC-0.2
“H” input voltage VIH
200
－
0
Duty Cycle
no more than 20%
mA
350
－
0
Collector current (Current per 1
circuit when 7 circuits are
coming on simultaneously)
VCC=5V
IC
V854
Supply voltage VCC
maxtypmin Unit
Limits
ParameterSymbol
RECOMMENDED OPERATING CONDITIONS
IC= 200mA
IC= 350mA
－－
100002000VCE = 4V, VCC = 5V, IC= 350mA, Ta = 25℃DC amplification factorhFE
mA
3.01.4
－
VCC = 5V, VI= VCC－3.5V
Supply current (one circuit
coming on)
ICC
mA
－0.58－0.3
－
VI= VCC－3.5V
Input current
II1.60.9
－V
2.21.1
－
VI= VCC－3V
Collector-emitter saturation
voltage
VCE(sat)
V
－－
50ICEO = 100μA
Collector-emitter breakdown
voltage
V(BR)CEO
maxtypmin Unit
Limits
Test conditionsParameterSymbol
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = －20～＋75℃）
*：The typical values are those measured under ambient temperature (Ta) of 25℃. There is no guarantee that these values are obtained under any conditions.
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25℃）
ｎｓ
－
2500
－
Turn－off time
toff
ｎｓ
－
95
－
CL= 15pF（note 1）
Turn－on time
ton maxtypmin Unit
Limits
Test conditionsParameterSymbol
NOTE 1 TEST CIRCUIT TIMING DIAGRAM
OUTPUT
INPUT 50%
50%
ｔon
50%
50%
ｔoff
50Ω CL
RL
VO
PG
INPUT
OUTPUT
Measured
device
(1) Pulse generator (PG) characteristics: PRR = 1kHz,
tw = 10μs, tr = 6ns, tf = 6ns, ZO= 50Ω,VI= 1 to 4V
(2) Input-output conditions : RL= 30Ω, VO= 10V, VCC = 4V
(3) Electrostatic capacity CL includes floating capacitance at
connections and input capacitance at probes
VCC
＊
MITSUBISHI SEMICONDUCTORS <TRANSI STO R ARRAY>
M54566DP
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY
Jul-2011
3
TYPICAL CHARACTERISTICS
Thermal Derating Factor Characteristics
Ambient temperature Ta(℃)
Power dissipation Pd(W)
0 25 50 75 100
0
0.5
1.0
1.5
2.0
M54566DP
Output Saturation Voltage
Collector current Characteristics
Output saturation voltage VCE(sat)(V)
Collector current IC(mA)
Duty-Cycle-Coll ector current Characteristics
Duty cycle (%)
Collector current IC(mA)
0 20 60 80 100
0
100
200
300
500
①
40
400
②
③
④
⑤
⑦
⑥
•The collector
current values
represent the current per circuit.
•Repeated frequency > 10Hz
•The value in the circle represents the value of the
simultaneously-operated circuit.
•Vcc=5V •Ta = 75℃
Duty cycle (%)
Collector current IC(mA)
0 20 60 80 100
0
100
200
300
500
•The collector current values
represent the current per circuit.
•Repeated frequency > 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Vcc=5V •Ta = 25℃
①
40
400
②
③
④
⑤
⑦
⑥
Duty-Cycle-Coll ector current Characteristics
DC Amplification Factor
Collector Current Characteristics
Collector current IC(mA)
DC amplification factor hFE
10
10
7VCC=4V
VCE=4V
5
3
2
3
10 2
4
7
5
3
2
10
7532 3
10 2
7532
10 1
Collector current IC(mA)
0 0.5 1.0 1.5 2.0
0
100
200
300
400
Ta=25℃
Ta=-20℃
Ta=75℃
VCC=4V
VI=1V
Grounded Emitter Transfer Characteristics
Supply voltage-Input voltage VCC-VI(V)
0 0.4 0.8 1.2 1.6
0
100
200
300
400
Ta=25℃
Ta=-20℃
Ta=75℃
VCC=4V
VCE=4V
Ta=25℃
Ta=-20℃
Ta=75℃
MITSUBISHI SEMICONDUCTORS <TRANSI STO R ARRAY>
M54566DP
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY
Jul-2011
4
Input current II(mA)
Supply current ICC(mA)
Input Characteristics
Supply voltage-Input voltage VCC-VI(V)
012 45
0
-0.2
-0.6
-0.8
-1.0
3
Supply Current Characteristics
Supply Voltage VCC(V)
024 810
0
1
2
4
5
6
Ta=25℃
Ta=-20℃
Ta=75℃
VI=0V
3
VCC=8V
-0.4 Ta=25℃
Ta=-20℃
Ta=75℃
MITSUBISHI SEMICONDUCTORS <TRANSI STO R ARRAY>
M54566DP
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY
Jul-2011
5
PACKAGE OUTLINE
PRELIMINARY
