T4-LDS-0319, Rev. 1 (9/25/13) ©2013 Microsemi Corporation Page 1 of 5
2N4234 – 2N4236
Available on
commercial
versions
PNP Power Amplifier Silicon Transistor
Qualified per MIL-PRF-19500/580
Quali f i ed Lev els:
JAN, JAN TX and
JANTXV
DESCRIPTION
Th is fa mily of 2N 42 34 , 2N423 5, an d 2N 4 23 6 silicon transi stor s are mili tary q uali fied up to the
JANTXV level for high-reliability applications.
TO-205AD
(formerly TO-39)
Package
Important: For the latest information, v isit our website http://www.microsemi.com.
FEATURES
• JEDEC registered 2N4234 and 2N4236 number
• JAN, JANTX , and JANTXV qualifications available per MIL-PRF-19500/580
• RoHS com pliant version available
APPLICATIONS / BENE FITS
• Short leaded TO-205AD pack age
• Lightweight package
• Military and other high-reliability applications
MAXIMUM RATINGS @ TA = +25 °C unless otherwis e not ed
Parameters / Test Conditions Symbol Value Unit
Junction & Stor age Temper ature
TJ, Tstg
-65 to +200
°C
Thermal Resistance Junction-to-Case
RӨJC
29
ºC/W
Thermal Resistance Junction-to-Ambient
RӨJA
175
ºC/W
Total Power Dissipation
(1)
@ TA = 25 ºC
(2) PT 1.0
6.0
W
Collector – Emitter Voltage 2N4234
2N4235
VCEO -40
-60
-80
V
Collector – Base Voltage
2N4235
VCBO
-40
-60
-80
V
Emitter - Base Voltage
VEBO
-7.0
V
Base Current
IB
-0.5
A
Collector Current
IC
-1.0
A
Notes: 1. Derated linearly by 5.7 mW/°C for TA > +25 °C
2. Derated linearly by 34 mW/°C for TC > +25 °C
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0319, Rev. 1 (9/25/13) ©2013 Microsemi Corporation Page 2 of 5
2N4234 – 2N4236
M ECHANICAL and PACKAGING
• CASE: Hermetically sealed, steel base, nickel cap
• TERMINALS: Steel Leads, nickel plated, then solder dipped o r RoHS compl iant matte-tin available on commercial grade only
• MARKING: Part number, date code, manufacturer’s ID and serial number
• POLARITY: PNP
• WEIGHT: A pproximately 1.064 grams
• See Package Dimensions on last page.
PART NOMENCLATURE
JAN 2N4234 (e3)
Reliability Level
JAN = JAN lev el
JANTX = JANTX level
JANTXV = JANTXV level
Blank = Commercial
RoHS Compliance
e3 = RoHS Compliant (available
on commercial grade only)
Blank = non-RoHS Compliant
JEDEC type number
SYMBOL S & DEFI NITIONS
Symbol
Definition
IB
Base cur rent: The value of the dc current into the base terminal.
IC
Collector current: The value of the dc current into the collector terminal.
IE
Emitter current: The value of the dc current into the em itter terminal.
TC
Cas e temp er ature: Th e temperature meas ured at a specifi ed location on the case of a de vice.
VCB
Collector-base voltage: The dc vol tage between the collector and the base.
VCBO
Collector-base voltage, base open: The voltage between the collector and base ter minals when the e mitter terminal is
open-circuited.
VCC
Collector-suppl y voltage: The supply voltage applied to a circuit connected to the collector.
VCE
Collector-emitter voltage: The dc voltage between the collector and the emitter.
VCEO
Collector-emitter voltage, bas e open: The voltage between the collector and the emitter terminal s when the base
terminal is open-circuited.
VEB
Emitter-base voltage: The dc voltage between the emitter and the base
VEBO
Emitter-base voltage, collector open: The voltage between the emi tter and base terminals with the collector terminal
open-circuited.
T4-LDS-0319, Rev. 1 (9/25/13) ©2013 Microsemi Corporation Page 3 of 5
2N4234 – 2N4236
ELECTRI CAL CHARACTERISTICS @ TA = +2 5 ° C , u nless other wis e noted
Characteristics
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-E mitter Breakdown Voltag e
IC = -100 mA
2N4234
2N4235
2N4236
V(BR)CEO
-40
-60
-80
V
Collector-Emit ter Cut off Current
VCB = -30 V
VCB = -40 V
VCB = -60 V
2N4234
2N4235
2N4236
ICEO
-1.0
-1.0
-1.0
mA
Collector-Emit ter Cut off Current
VCB = -40 V, VBE = -1.5 V
VCB = -60 V, VBE = -1.5 V
VCB = -80 V, VBE = -1.5 V
2N4234
2N4235
2N4236
ICEX
-100
-100
-100
nA
Collector-Base Cutoff Current
VCB = -40 V
VCB = -60 V
VCB = -80 V
2N4234
2N4235
2N4236
ICBO
-100
-100
-100
nA
Emitter-Base C utoff Current
VBE = -7.0 V
IEBO
-0.5
mA
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = -100 mA, VCE = -1.0 V
IC = -250 mA, VCE = -1.0 V
IC = -500 mA, VCE = -1.0 V
hFE
40
30
20
150
Collector-Emitter Saturation Voltage
IC = -1.0 A, IB = -100 mA
I
C
= -500 mA, I
B
= -50 mA
VCE(sat)
-0.6
-0.4
V
Base-Emi tt er Satu r ation V oltage
IC = -500 mA, IB = -50 mA
IC = -1.0 A, IB = -100 mA
VBE(sat)
-1.1
-1.5
V
DYNAMIC CHARACTERISTICS
Magn itude of Common Emitter Small-Signal Short -Circuit
Forward Cur r ent Tran sfer Rati o
IC = -100 mA, VCE = -10 V, f = 1 MHz
|hFE| 3.0
O utput Capac itance
VCB = -10 V, IE = 0, f = 10 0 M Hz
Cobo 100 pF
T4-LDS-0319, Rev. 1 (9/25/13) ©2013 Microsemi Corporation Page 4 of 5
2N4234 – 2N4236
ELECTRI CAL CHARACTERISTICS @ T
A
= +2 5 °C, unles s otherwise noted (continued)
SAFE OPERATING AREA
DC Te sts
TC = +25 °C, 1 cycle, t ≥ 0.5 s
Test 1
VCE = -6.0 V, IC = -1.0 A
Test 2
VCE = -12 V, IC = -500 mA
Test 3
VCE = -30 V, IC = -166 mA (2N4234)
VCE = -50 V, IC = -100 mA (2N4235)
VCE = -70 V, IC = -71 mA (2N4236)
(3) Pulse Test: Pulse Width = 300 µs, duty cycle ≤ 2.0%
T4-LDS-0319, Rev. 1 (9/25/13) ©2013 Microsemi Corporation Page 5 of 5
2N4234 – 2N4236
PACKAGE DIM ENSIONS
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for information only.
3. Beyond r (radius ) maximum, TL shall be held for a minimum length of 0.011 inch (0.28 mm) .
4. Dimension TL measured from maximum HD.
5. Body contour optional within zone defined by HD, CD, and Q.
6. CD shall not vary more than .010 inch (0.25 mm) in zone P. Thi s zone is controlled for automatic handling.
7. Leads at gauge plane 0.054 +0.001 -0.000 inch (1.37 +0.03 -0.00 mm) belo w seatin g plane shall be with in 0.007 inch (0.18
mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC.
8. Dimension LU appli es betw een L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is uncontrolled in L1
and beyond LL minimum.
9. All three leads.
10. The collector shall be internall y connected to the case.
11. Dimension r (radius) applies to both inside corners of tab.
12. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
13. Lead 1 = emitter, lead 2 = base, lead 3 = collector.
Ltr
Dimensions
Inch
Millimeters
Notes
Min
Max
Min
Max
CD 0.305 0.335 7.75 8.51
CH
0.240
0.260
6.10
6.60
HD
0.335 0.370 8.51 9.40
h 0.009 0.041 0.23 1.04
j
0.028
0.034
0.71
0.86
3
k
0.029
0.045
0.74
1.14
3, 4
LD
0.016
0.021
0.41
0.53
8, 9
LL
0.500
0.750
12.7
19.05
LC
0.200 TP
5.08 TP
7
LU
0.016 0.019 0.41 0.48 8, 9
L1
-
0.050
-
1.27 8, 9
L2
0.250
-
6.35
-
8, 9
P 0.100
-
2.54
-
7
Q
-
0.050
-
1.27
5
r
-
0.010
-
0.25 10
α
45° TP
45° TP
7