© 2005 IXYS All rights reserved
VCES = 900 V
IC25 = 64 A
VCE(sat) = 2.7 V
tfi typ = 150 ns
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified)
min. typ. max.
VGE(th) IC = 250 mA, VCE = VGE 3.0 5.0 V
ICES VCE = VCES 300 μA
VGE = 0 V TJ = 150°C 1.5 mA
IGES VCE = 0 V, VGE = ± 20 V ± 100 nA
VCE(sat) IC = IC110, VGE = 15 V 2.2 2.7 V
TJ = 125°C 2.1 V
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 900 V
VCGR TJ= 25°C to 150°C; RGE = 1 MW 900 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C 64 A
IC110 TC= 110°C 32 A
ICM TC= 25°C, 1 ms 200 A
SSOA VGE = 15 V, TVJ = 125°C, RG = 10 Ω ICM = 64 A
(RBSOA) Clamped inductive load: VCL < 600V
PCTC= 25°C 300 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
MdMounting torque (TO-247) 1.13/10Nm/lb.in.
Weight TO-247 6 g
TO-268 4 g
DS99392(12/05)
G = Gate C = Collector
E = Emitter TAB = Collector
Features
• High frequency IGBT
• High current handling capability
• MOS Gate turn-on
- drive simplicity
Applications
• PFC circuits
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
power supplies
• AC motor speed control
• DC servo and robot drives
• DC choppers
Advantages
• High power density
• Very fast switching speeds for high
frequency applications
HiPerFASTTM IGBT
with Fast Diode
IXGH 32N90B2D1
IXGT 32N90B2D1
TO-268 (IXGT)
C (TAB)
C (TAB)
GCE
TO-247 (IXGH)
E
G
B2-Class
High Speed IGBTs with
Ultrafast Diode
Advance Technical Information
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH 32N90B2D1
IXGT 32N90B2D1
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ. Max.
gfs IC= IC110 , VCE = 10 V 18 28 S
Pulse test, t < 300 μs, duty cycle < 2 %
Cies 1790 pF
Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 146 pF
Cres 49 pF
Qg89 nC
Qge IC = IC110 , VGE = 15 V, VCE = 0.5 VCES 15 nC
Qgc 34 nC
td(on) 20 ns
tri 22 ns
td(off) 260 400 ns
tfi 150 ns
Eoff 2.2 4.5 mJ
td(on) 20 ns
tri 22 ns
Eon 3.8 mJ
td(off) 360 ns
tfi 330 ns
Eoff 5.75 mJ
RthJC 0.42 K/W
RthCS (TO-247) 0.25 K/W
Inductive load, TJ = 25°C
IC = IC110 , VGE = 15 V
VCE = 720 V, RG = Roff = 5 Ω
Inductive load, TJ = 125°C
IC = IC110 A, VGE = 15 V
VCE = 720 V, RG = Roff = 5 Ω
TO-247 AD Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
e
∅ P
TO-268 Outline
Ultrafast Diode
Symbol Conditions Maximum Ratings
IF110 TC = 110°C 27 A
Symbol Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
VFIF = 30 A; 2.75 V
TVJ = 125°C 1.9 V
IRM IF = 50 A; diF/dt = -100 A/μs; TVJ = 100°C 5.5 11.4 A
trr VR = 100 V; VGE = 0 V 190 ns
RthJC 0.9 K/W
RthCS 0.25 K/W
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2
© 2005 IXYS All rights reserved
IXGH 32N90B2D1
IXGT 32N90B2D1
Fig. 2. Extended Output Characteristics
@ 25
º
C
0
40
80
120
160
200
240
02468101214161820
V
C E
- Volts
I
C
- Amperes
V
GE
= 15V
7V
9V
11V
13V
Fig. 3. Output Characteristics
@ 125
º
C
0
10
20
30
40
50
60
70
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
13V
11V
9V
7V
5V
Fig. 1. Output Characteristics
@ 25
º
C
0
10
20
30
40
50
60
70
00.511.522.533.544.5
V
C E
- Volts
I
C
- Amperes
V
GE
= 15V
13V
11V
9V
5V
7V
Fig. 4. Dependence of V
CE(sat)
on
Temperature
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
V
C E (sat)
- Normalize
d
I
C
= 32A
I
C
= 16A
V
GE
= 15V
I
C
= 64A
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter voltage
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
6 7 8 9 10 11 12 13 14 15 16 17
V
G E
- Volts
V
C E
- Volts
T
J
= 25ºC
I
C
= 64A
32A
16A
Fig. 6. Input Admittance
0
20
40
60
80
100
120
140
45 678 910
V
G E
- Volts
I
C
- Amperes
T
J
= 125ºC
25ºC
-40ºC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH 32N90B2D1
IXGT 32N90B2D1
Fig. 7. Trans conductance
0
5
10
15
20
25
30
35
0 20 40 60 80 100
I
C
- Amperes
g
f s
- Siemens
TJ
=
-40
º
C
25
º
C
12 5
º
C
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 102030405060708090100
Q
G
- nanoCoulombs
V
G E
- Volts
V
CE
= 450V
I
C
= 32A
I
G
= 10mA
Fig. 9. Capacitance
10
100
1000
10000
0 5 10 15 20 25 30 35 40
V
C E
- Volts
Capacitance - p
F
C
ies
C
oes
C
res
f = 1 MHz
Fig. 10. Reve rse-Bias Safe
Operating Are a
0
10
20
30
40
50
60
70
100 200 300 400 500 600 700 800 900
V
C E
- Volts
I
C
- Amperes
TJ = 125
º
C
RG = 10Ω
dV/dT < 10V/ns
Fig. 11. Maxim um Transient Therm al Resis tance
0.01
0.1
1
0.1 1 10 100 1000
Pulse Width - milliseconds
R
( t h ) J C
-
ºC / W
© 2005 IXYS All rights reserved
IXGH 32N90B2D1
IXGT 32N90B2D1
Fig. 14. Dependence of Turn-off
Energy Loss on Collector Current
0
2
4
6
8
10
12
14
16
10 20 30 40 50 60 70
I
C
- Amperes
E
o f f
- MilliJoules
R
G
= 5Ω
V
GE
= 15V
V
CE
= 720V T
J
= 125
º
C
T
J
= 25
º
C
Fig. 16. Dependence of Turn-off
Energy Loss on Temperature
0
2
4
6
8
10
12
14
16
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
E
o f f
- MilliJoule
s
I
C
= 64A
R
G
= 5Ω
V
GE
= 15V
V
CE
= 720V
I
C
= 32A
I
C
= 16A
Fig. 12. Dependence of Turn-off
Energy Loss on Gate Resistance
0
2
4
6
8
10
12
14
16
18
0 5 10 15 20 25 30 35 40 45 50
R
G
- Ohms
E
o f f
- MilliJoules
I
C
= 64A
T
J
= 125
º
C
V
GE
= 15V
V
CE
= 720V I
C
= 32A
I
C
= 16A
Fig. 13. Dependence of Turn-on
Energy Loss on Gate Resistance
0
2
4
6
8
10
12
14
16
0 5 10 15 20 25 30 35 40 45 50
R
G
- Ohms
E
o n
- MilliJoule
s
I
C
= 64A
T
J
= 125
º
C
V
GE
= 15V
V
CE
= 720V
I
C
= 32A
I
C
= 16A
Fig. 15. Dependence of Turn-on
Energy Loss on Collector Current
0
1
2
3
4
5
6
7
8
9
10 20 30 40 50 60 70
I
C
- Amperes
E
o n
- MilliJoules
R
G
= 5Ω
V
GE
= 15V
V
CE
= 720V
T
J
= 125
º
C
T
J
= 25
º
C
Fig. 17. Dependence of Turn-on
Energy Loss on Temperature
0
1
2
3
4
5
6
7
8
9
10
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
E
o n
- MilliJoules
I
C
= 64A
R
G
= 5Ω
V
GE
= 15V
V
CE
= 720V
I
C
= 32A
I
C
= 16A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH 32N90B2D1
IXGT 32N90B2D1
Fig. 18. Dependence of Turn-off
Switching Time on Gate Resistance
350
375
400
425
450
475
500
525
550
4 6 8101214161820
R
G
- Ohms
t
d ( o f f )
-
Nanoseconds
320
330
340
350
360
370
380
390
400
t
f i
-
Nanoseconds
t
d(off)
t
fi
- - - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 720V
I
C
= 32A, 16A
I
C
= 16A, 32A, 64A
Fig. 20. Dependence of Turn-off
Sw itching Time
on Collector Current
100
150
200
250
300
350
400
450
500
15 20 25 30 35 40 45 50 55 60 65
I
C
- Amperes
t
d ( o f f )
/
t
f i
- Nanoseconds
t
d(off)
t
fi
- - - - -
R
G
= 5 Ω, V
GE
= 15V
V
CE
= 720V
T
J
= 125
º
C
T
J
= 25
º
C
Fig. 22. Dependence of Turn-off
Switching Time on Temperature
100
150
200
250
300
350
400
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
d ( o f f )
/
t
f i
- Nanoseconds
t
d(off)
t
fi
- - - - -
R
G
= 5Ω , V
GE
= 15V
V
CE
= 720V
I
C
= 64A, 32A, 16A
I
C
= 64A, 32A, 16A
Fig. 19. Dependence of Turn-on
Switching Time on Gate Resistance
15
20
25
30
35
40
45
468101214161820
R
G
- Ohms
t
d ( o n )
-
Nanoseconds
0
30
60
90
120
150
180
t
r i
-
Nanoseconds
t
d(on)
t
ri
- - - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 720V
I
C
= 32A
I
C
= 16A
I
C
= 64A
Fig. 21. Dependence of Turn-on
Sw itching Time
on Collector Current
10
12
14
16
18
20
22
24
26
28
30
10 20 30 40 50 60 70
I
C
- Amperes
t
d ( o n )
- Nanoseconds
0
10
20
30
40
50
60
70
80
90
10 0
t
r i
- Nanoseconds
t
d(on)
t
ri
- - - -
R
G
= 5 Ω, V
GE
= 15V
V
CE
= 720V
T
J
= 125
º
C
T
J
= 25
º
C
Fig. 23. Dependence of Turn-on
Switching Time on Temperature
10
15
20
25
30
35
40
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
d ( o n )
- Nanoseconds
0
25
50
75
10 0
12 5
15 0
t
r i
- Nanoseconds
t
d(on)
t
ri
- - - - -
R
G
= 5 Ω , V
GE
= 15V
V
CE
= 720V
I
C
= 32A
I
C
= 64A
I
C
= 1 6A
© 2005 IXYS All rights reserved
Fig. 26. Peak reverse current IRM
versus -diF/dt
Fig. 25. Reverse recovery charge Qr
versus -diF/dt
Fig. 24. Forward current IF versus VF
Qr
IRM
Fig. 27. Dynamic parameters Qr, IRM
versus TVJ
Fig. 28. Recovery time trr versus -diF/dt Fig. 29. Peak forward voltage VFR and
tfr versus diF/dt
tfr VFR
Fig. 30. Transient thermal resistance junction to case
Constants for ZthJC calculation:
iR
thi (K/W) ti (s)
1 0.465 0.0052
2 0.179 0.0003
3 0.256 0.0397
TVJ= 100°C
VR = 600V
IF= 60A
IF= 30A
IF=15A
TVJ= 100°C
IF = 30A
IF= 60A
IF= 30A
IF=15A
TVJ= 100°C
VR = 600V
TVJ= 100°C
VR = 600V
IF= 60A
IF= 30A
IF= 15A
TVJ= 25°C
TVJ=100°C
TVJ=150°C
Ultrafast Diode Charateristic Curves
200 600 10000 400 800
120
140
160
180
200
220
0.00001 0.0001 0.001 0.01 0.1 1
0.001
0.01
0.1
1
0 40 80 120 160
0.0
0.5
1.0
1.5
2.0
Kf
TVJ
C
-diF/dt
t
s
K/W
0 200 400 600 800 1000
0
40
80
120
0.0
0.4
0.8
1.2
VFR
diF/dt
V
200 600 10000 400 800
0
10
20
30
40
50
60
100 1000
0
1
2
3
4
5
01234
0
10
20
30
40
50
60
70
IRM
Qr
IF
A
VF-diF/dt -diF/dt
A/μs
A
V
μC
A/μsA/μs
trr
ns
tfr
ZthJC
A/μs
μs
2
IXGH 32N90B2D1
IXGT 32N90B2D1
