APTM20AM10FT
APTM20AM10FT – Rev 2 July, 2005
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G1
Q1
VBUS NTC2
OUT
S1
G2
S2
Q2
0/VBU S NT C1
S2
G2
NTC2
OUT
OUT
VBUS
NTC1
S1 S2
G2
0/VBUS
G1
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
S
ymbol Parameter Max ratings Unit
VDSS Drain - Source Breakdown Voltage 200 V
Tc = 25°C 175
ID Continuous Drain Current Tc = 80°C 131
IDM Pulsed Drain current 700
A
VGS Gate - Source Voltage ±30 V
RDSon Drain - Source ON Resistance 12 m
PD Maximum Power Dissipation Tc = 25°C 694 W
IAR Avalanche current (repetitive and non repetitive) 89 A
EAR Repetitive Avalanche Energy 50
EAS Single Pulse Avalanche Energy 2500 mJ
VDSS = 200V
RDSon = 10m typ @ Tj = 25°C
ID = 175A @ Tc = 25°C
Applicatio
n
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Features
Power MOS 7® FREDFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
- Lead frames for power connections
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstandi ng perfor mance at hi gh freque ncy operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
P
hase leg
MOSFET Power Module
APTM20AM10FT
APTM20AM10FT – Rev 2 July, 2005
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All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VGS = 0V,VDS = 200V Tj = 25°C 375
IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 160V T
j = 125°C 1500 µA
RDS(on) Drain – Source on Resistance VGS = 10V, ID = 87.5A 10 12
m
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 5mA 3 5 V
IGS S Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±150 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Cis s Input Capacitance 13.7
Coss Output Capacitance 4.36
Crss Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz 0.19
nF
Qg Total gate Charge 224
Qgs Gate – Source Charge 86
Qgd Gate – Drain Charge
VGS = 10V
VBus = 100V
ID = 150A 94
nC
Td(on) Tur n-on Delay Ti me 28
Tr Rise Time 56
Td(off) Turn-off Delay Time 81
Tf Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 133V
ID = 150A
RG = 2.5 99
ns
Eon Turn-on Switching Energy 926
Eoff Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 133V
ID = 150A, RG = 2.5 910
µJ
Eon Turn-on Switching Energy 1216
Eoff Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 133V
ID = 150A, RG = 2.5 1062
µJ
Source - Drain diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Tc = 25°C 175 IS Continuous Source current
(Body diode)
Tc = 80°C 131 A
VSD Diode Forward Voltage VGS = 0V, IS = - 150A 1.3 V
dv/dt Peak Diode Recovery X 8 V/ns
Tj = 25°C 220
trr Reverse Recovery Time Tj = 125°C 420 ns
Tj = 25°C 2.14
Qrr Reverse Recovery Charge
IS = - 150A
VR = 133V
diS/dt = 200A/µs Tj = 125°C 5.8 µC
X dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS - 150A di/dt 700A/µs VR VDSS Tj 150°C
APTM20AM10FT
APTM20AM10FT – Rev 2 July, 2005
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6
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
RthJC Junction to Case 0.18 °C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V
TJ Operating junction temperature range -40 150
TSTG Storage Temperature Range -40 125
TC Operating Case Temperature -40 100
°C
Torque Mounting torque To Heatsink M5 1.5 4.7 N.m
Wt Package Weight 160 g
Temperature sensor NTC (see application note APT0406 on www.advancedpower.com for more information).
Symbol Characteristic Min Typ Max Unit
R25 Resistance @ 25°C 50 k
B 25/85 T
25 = 298.15 K 3952 K
=
TT
B
R
RT
11
exp
25
85/25
25
SP4 Package outline (dimensions in mm)
T: Thermistor temperature
RT: Thermistor value at T
APTM20AM10FT
APTM20AM10FT – Rev 2 July, 2005
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Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.2
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
5.5V
6V
6.5V
7V
7.5V
9V
0
100
200
300
400
500
0 5 10 15 20 25
VDS, Drain to Source Voltage (V)
ID, Drain Current (A)
VGS=15&10V
Low Voltage Output Characteristics Transfert Characteristics
TJ=-55°C
TJ=25°C
TJ=125°C
0
100
200
300
400
23456789
VGS, Gate to Source Voltage (V)
ID, Drain Current (A)
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
RDS (on) vs Drain Current
VGS=10V
VGS=20V
0.9
0.95
1
1.05
1.1
1.15
1.2
0 40 80 120 160 200 240
ID, Drain Current (A)
RDS(on) Drain to Source ON Resistance
Normalized to
VGS=10V @ 87.5A
0
20
40
60
80
100
120
140
160
180
200
25 50 75 100 125 150
TC, Case Temperature (°C)
ID, DC Drain Current (A)
DC Drain Current vs Case Temperature
APTM20AM10FT
APTM20AM10FT – Rev 2 July, 2005
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6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
BVDSS
, Drain to Source Breakdown
Volta
g
e
(
Normalized
)
Breakdown Voltage vs Temperature ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
RDS(on), Drain to Source ON resistance
(Normalized)
VGS=10V
ID= 87.5A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
VGS(TH), Threshold Voltage
(Normalized)
Maximum Safe Operating Area
DC line
10ms
1ms
100µs
1
10
100
1000
1 10 100 1000
VDS , Drain to Source Voltage (V)
ID, Drain Current (A)
limited by
RDSon
Single pulse
TJ=150°C
Ciss
Crs s
Coss
100
1000
10000
100000
0 1020304050
VDS, Drain to Source Voltage (V)
C, Capacitance (pF)
Capacitance vs Drain to Source Voltage
VDS =40V
VDS =100V
VDS =160V
0
2
4
6
8
10
12
0 50 100 150 200 250
Gate Charge (nC)
VGS, Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
ID=150A
TJ=25°C
APTM20AM10FT
APTM20AM10FT – Rev 2 July, 2005
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6
Delay Times vs Current
td(on)
td(off)
10
20
30
40
50
60
70
80
90
0 50 100 150 200 250 300
ID, Drain Current (A)
td(on) and td(off) (ns)
VDS=133V
RG=2.5
TJ=125°C
L=100
µ
H
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
100
120
140
160
0 50 100 150 200 250 300
ID, Drain Current (A)
tr and tf (ns)
VDS=133V
RG=2.5
TJ=125°C
L=100µH
Switching Energy vs Current
Eon
Eoff
0
0.5
1
1.5
2
2.5
0 50 100 150 200 250 300
ID, Drain Current (A)
Eon and Eoff (mJ)
VDS=133V
RG=2.5
TJ=12C
L=100
µ
H
Eon
Eoff
1
1.5
2
2.5
3
0 5 10 15 20
Gate Resistance (Ohms)
Switching Energy (mJ)
Switching Energy vs Gate Resistance
VDS=133V
ID=150A
TJ=125°C
L=100µH
0
50
100
150
200
250
300
350
20 40 60 80 100 120 140 160
ID, Drain Current (A)
Frequency (kHz)
Operating Frequency vs Drain Curren
VDS=133V
D=50%
RG=2.5
TJ=125°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9
VSD
, Source to Drain Voltage (V)
IDR, Reverse Drain Current (A)
Source to Drain Diode Forward Voltage
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