APTM20AM10FT
APTM20AM10FT – Rev 2 July, 2005
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All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VGS = 0V,VDS = 200V Tj = 25°C 375
IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 160V T
j = 125°C 1500 µA
RDS(on) Drain – Source on Resistance VGS = 10V, ID = 87.5A 10 12
mΩ
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 5mA 3 5 V
IGS S Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±150 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Cis s Input Capacitance 13.7
Coss Output Capacitance 4.36
Crss Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz 0.19
nF
Qg Total gate Charge 224
Qgs Gate – Source Charge 86
Qgd Gate – Drain Charge
VGS = 10V
VBus = 100V
ID = 150A 94
nC
Td(on) Tur n-on Delay Ti me 28
Tr Rise Time 56
Td(off) Turn-off Delay Time 81
Tf Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 133V
ID = 150A
RG = 2.5Ω 99
ns
Eon Turn-on Switching Energy 926
Eoff Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 133V
ID = 150A, RG = 2.5Ω 910
µJ
Eon Turn-on Switching Energy 1216
Eoff Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 133V
ID = 150A, RG = 2.5Ω 1062
µJ
Source - Drain diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Tc = 25°C 175 IS Continuous Source current
(Body diode)
Tc = 80°C 131 A
VSD Diode Forward Voltage VGS = 0V, IS = - 150A 1.3 V
dv/dt Peak Diode Recovery X 8 V/ns
Tj = 25°C 220
trr Reverse Recovery Time Tj = 125°C 420 ns
Tj = 25°C 2.14
Qrr Reverse Recovery Charge
IS = - 150A
VR = 133V
diS/dt = 200A/µs Tj = 125°C 5.8 µC
X dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 150A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C