Rev.3.00 Sep 07, 2005 page 1 of 6
2SK2590
Silicon N Channel MOS FET REJ03G1021-0300
(Previous: ADE-208-1365A)
Rev.3.00
Sep 07, 2005
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for switching regulator, DC-DC converter, motor control
Outline
RENESAS Package code: PRSS0004AC-A
(Package name: TO-220AB)
1. Gate
2. Drain
(Flange
)
3. Source
123
D
G
S
1
2
3
G
2SK2590
Rev.3.00 Sep 07, 2005 page 2 of 6
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 200 V
Gate to source voltage VGSS ±20 V
Drain current ID 7 A
Drain peak current ID(pulse)*1 28 A
Body to drain diode reverse drain current IDR 7 A
Channel dissipation Pch*2 50 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V(BR)DSS 200 — — V ID = 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0
Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0
Zero gate voltage drain current IDSS — — 250 µA VDS =160 V, VGS = 0
Gate to source cutoff voltage VGS(off) 2.0 — 4.0 V ID = 1 mA, VDS = 10 V
Static drain to source on state
resistance RDS(on) — 0.33 0.45 Ω I
D = 4 A, VGS = 10 V*1
Forward transfer admittance |yfs| 3.0 4.5 — S ID = 4 A, VDS = 10 V*1
Input capacitance Ciss — 700 — pF
Output capacitance Coss — 260 — pF
Reverse transfer capacitance Crss — 45 — pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time td(on) — 20 — ns
Rise time tr — 45 — ns
Turn-off delay time td(off) — 50 — ns
Fall time tf — 35 — ns
ID = 4 A, VGS = 10 V,
RL = 7.5 Ω
Body to drain diode forward voltage VDF — 1.1 — V IF = 7 A, VGS = 0
Body to drain diode reverse
recovery time trr — 150 — ns IF = 7 A, VGS = 0,
diF / dt = 100 A / µs
Note: 3. Pulse Test
Unit Test
200 — — V I
D
20 — — V I
G
=
±
10
µ
A V
— — 250
µ
A V
2.0 — 4.0 V I
— 0.33 0.45
| 3.0 4.5 — S I
Ciss — 700 — pF
Coss — 260 — pF
Reverse transfer capacitance Crss — 45 — pF
d(on)
— 20 — ns
t
r
— 45 — ns
r — 45 — ns
r
t
d(off)
— 50 — ns
t
f
— 35 — ns
f — 35 — ns
f
Body to drain diode forward voltage V
DF
— 1.1 — V I
Body to drain diode reverse
t
rr
— 150 — ns
2SK2590
Rev.3.00 Sep 07, 2005 page 3 of 6
Main Characteristics
Power vs. Temperature Derating
Channel Dissipation Pch (W)
Case Temperature TC (°C)
Maximum Safe Operation Area
Drain to Source Voltage VDS (V)
Drain Current ID (A)
Typical Output Characteristics
Drain Current ID (A)
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain to Source Saturation Voltage
VDS (on) (V)
Drain Current ID (A)
Static Drain to Source on State
Resistance vs. Drain Current
Static Drain to Source on State Resistance
RDS (on) (Ω)
0 4 8 12 16 20
2
4
6
8
10
4 V
6 V
4.5 V
VGS = 3.5 V
10 V
Pulse Test
5.5 V
5 V
2 4 6 8 10
2
4
6
8
10
Pulse Test
VDS = 10 V
0
Tc = 25°C–25°C
75°C
4 8 12 16 200
0.4
0.8
1.2
1.6
2.0
ID = 1 A
2 A
5 A
Pulse Test
0.5
10
5
2
1
0.2
0.5
0.1 1 2 5 10 20 50
Pulse Test
VGS = 10 V
15 V
80
60
40
20
050 100 150 200
50
30
10
3
1
0.3
0.1
0.0513 10 30 100 300 1000
Ta = 25°C
Operation in
this area is
limited by RDS(on)
10 µs
100 µs
1 ms
PW = 10 ms (1 Shot)
DC Operation (Tc = 25°C)
Drain to Source Voltage V
Drain to Source Voltage V
DS
(V)
Typical Transfer Characteristics
Drain Current I
D
(A)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
0 4 8 12 16 20
= 3.5 V
6
8
10
Pulse Test
V
2SK2590
Rev.3.00 Sep 07, 2005 page 4 of 6
Case Temperature T
C
(°C)
Static Drain to Source on State
Resistance vs. Temperature
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance
vs. Drain Current
Drain Current I
D
(A)
Forward Transfer Admittance yfs (S)
Body to Drain Diode Reverse
Recovery Time
Reverse Drain Current I
DR
(A)
Reverse Recovery Time trr (ns)
Typical Capacitance
vs. Drain to Source Voltage
Drain to Source Voltage V
DS
(V)
Capacitance C (pF)
Dynamic Input Characteristics
Gate Charge Qg (nc)
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
Switching Characteristics
Switching Time t (ns)
Drain Current I
D
(A)
–40 0 40 80 120
0
0.2
0.4
0.6
0.8
1.0
160
Pulse Test
ID
= 5 A
1 A, 2 A
0.1 0.5 2
50
20
10
5
2
0.5 0.2 1 10
V
DS
= 10 V
Pulse Test
75°C
Tc = 25°C
1
–25°C
5
0.2 1 5 20
5
100
500
200
50
20
10
0.5 2 10
di/dt = 100 A/ µs, V
GS
= 0
Ta = 25°C
100
10
10
1000
10 20 30 40 50
Ciss
Coss
Crss
V
GS
= 0
f = 1 MHz
8 16 24 32 40
100
200
400
500
4
8
12
16
20
00
300
ID
= 7 A
V
DD
= 150 V
100 V
50 V
V
GS
V
DS
V
DD
= 150 V
100 V
50 V
0.1
500
200
100
50
20
10
50.2 1 2 10
td(off)
td(on)
t
V
GS
= 10 V, V
DD
=
30 V
PW = 2 µs, duty 1%
t
<
=
f
r
50.5
•
•
Reverse Drain Current I
DR
(A)
Typical Capacitance
vs. Drain to Source Voltage
Capacitance C (pF)
Dynamic Input Characteristics
0.2 1 5 20
0.2 1 5 200.5 2 100.2 1 5 20
100
1000
V
GS
2SK2590
Rev.3.00 Sep 07, 2005 page 5 of 6
Reverse Drain Current vs.
Source to Drain Voltage
Source to Drain Voltage V
SD
(V)
Reverse Drain Current I
DR
(A)
Switching Time Test Circuit Waveforms
2
4
6
8
10
0 0.4 0.8 1.2 1.6 2.0
V
GS
= 10 V 0, –5 V
Pulse Test
Vin Monitor
Vin
10 V 50 Ω
D.U.T.
Vout Monitor
R
L
V
DD
30 V
=
..
Vin
td (on)
10%
tr
90%
Vout 10%
90% 90% tf
td (off)
10%
3
1.0
0.3
0.1
0.03
0.01
10 µ1 m 10 m 100 m
Pulse Width PW (s)
100 µ110
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance γs (t)
θch–c
(t) = γs
(t) • θch–c
θch–c = 2.5°C/W, T
C
= 25°C
PW D =
PW
T
T
T
C
= 25°C
P
DM
D = 1
0.5
0.05
1 Shot Pulse
0.2
0.1
0.02
0.01
Switching Time Test Circuit
Vin Monitor
1 m
Pulse Width PW (s)
Normalized Transient Thermal Impedance vs. Pulse Width
T
C
= 25
2SK2590
Rev.3.00 Sep 07, 2005 page 6 of 6
Package Dimensions
0.5 ± 0.1
2.54 ± 0.5
0.76 ± 0.1
14.0 ± 0.5 15.0 ± 0.3
2.79 ± 0.218.5 ± 0.57.8 ± 0.5
10.16 ± 0.2
2.54 ± 0.5
1.26 ± 0.15
4.44 ± 0.2
2.7 Max
1.5 Max
11.5 Max
9.5
8.0
1.27
6.4
+0.2
–0.1
φ 3.6
+0.1
–0.08
Package Name
PRSS0004AC-A TO-220AB / TO-220ABV
MASS[Typ.]
1.8gSC-46
RENESAS CodeJEITA Package Code
Unit: mm
Ordering Information
Part Name Quantity Shipping Container
2SK2590-E 500 pcs Box (Sack)
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
0.5 ± 0.1
Quantity
Note: For some grades, production may be terminated. Please
production before ordering the product.
Keep safety first in your circuit designs!
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
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1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of
publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product
information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor
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4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to
evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes
no responsibility for any damage, liability or other loss resulting from the information contained herein.
5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life
is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a
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6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and
cannot be imported into a country other than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.
8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
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RENESAS SALES OFFICES
© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .3.0
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas T
echnology Corp. or a third party.
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating
in the use of any product data,
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents i
nformation on products at the time of
publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvement
s or other reasons. It is
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distrib
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies o
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Techn
4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, a
evaluate all information as a total system before making a final decision on the applicability of the information and products.
no responsibility for any damage, liability or other loss resulting from the information contained herein.
5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under ci
is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor
product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerosp
6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materi
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a lic
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is
8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
http://www.renesas.com/en/network
" for the latest and detailed information.
450 Holger Way, San Jose, CA 95134-1368, U.S.A
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501
Renesas Technology Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900
Hong Kong Ltd.
7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong
Tel: <852> 2265-6688, Fax: <852> 2730-6071