Order this document SEMICONDUCTOR TECHNICAL DATA Integrated Power Stage for 5 hp Motor Drives by MHPM7A25A120B/D (This device is not recommended for new designs) (This device is replaced by MHPM7A25S120DC3) 25 AMP, 1200 VOLT HYBRID POWER MODULE This module integrates a 3-phase input rectifier bridge, 3-phase output inverter, brake transistor/diode, current sense resistor and temperature sensor in a single convenient package. The output inverter utilizes advanced insulated gate bipolar transistors (IGBT) matched with free-wheeling diodes to give optimal dynamic performance. It has been configured for use as a three-phase motor drive module or for many other power switching applications. The top connector pins have been designed for easy interfacing to the user's control board. * * * * * DC Bus Current Sense Resistor Included Short Circuit Rated 10 s @ 25C, 600 V Temperature Sensor Included Pin-to-Baseplate Isolation exceeds 2500 Vac (rms) Convenient Package Outline Recognized * UL * Access to Positive and Negative DC Bus * Visit our website at http://www.mot-sps.com/tsg/ PLASTIC PACKAGE CASE 440A-02, Style 1 MAXIMUM DEVICE RATINGS (TJ = 25C unless otherwise noted) Rating Symbol Value Unit 1200 V Average Output Rectified Current VRRM IO 25 A Peak Non-Repetitive Surge Current (1/2 cycle)(1) IFSM 200 A VCES VGES ICmax 1200 V 20 V 25 A IC(pk) IFmax 50 A 25 A IF(pk) PD 50 A 75 W 40 W Junction Temperature Range PD TJ - 40 to +125 C Short Circuit Duration (VCE = 600 V, TJ = 25C) tsc 10 s INPUT RECTIFIER BRIDGE Peak Repetitive Reverse Voltage (TJ = 125C) OUTPUT INVERTER IGBT Reverse Voltage Gate-Emitter Voltage Continuous IGBT Collector Current Peak Repetitive IGBT Collector Current(2) Continuous Free-Wheeling Diode Current Peak Repetitive Free-Wheeling Diode Current(2) IGBT Power Dissipation per die (TC = 95C) Free-Wheeling Diode Power Dissipation per die (TC = 95C) (1) 1 cycle = 50 or 60 Hz (2) 1.0 ms = 1.0% duty cycle REV 1 IGBT Motorola Motorola, Inc. 1998 Device Data 1 MHPM7A25A120B MAXIMUM DEVICE RATINGS (TJ = 25C unless otherwise noted) Rating Symbol Value Unit VCES VGES 1200 V 20 V ICmax IC(pk) 25 A 50 A IGBT Power Dissipation PD 75 W Diode Reverse Voltage VRRM IFmax 1200 V Continuous Output Diode Current 25 A Peak Output Diode Current IF(pk) 50 A Viso TC 2500 Vac - 40 to +90 C BRAKE CIRCUIT IGBT Reverse Voltage Gate-Emitter Voltage Continuous IGBT Collector Current Peak Repetitive IGBT Collector Current(2) TOTAL MODULE Isolation Voltage (47- 63 Hz, 1 min. duration) Operating Case Temperature Range Storage Temperature Range Tstg -- Mounting Torque - 40 to +125 C 6.0 lbSin (1) 1 cycle = 50 or 60 Hz (2) 1.0 ms = 1.0% duty cycle ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit IR VF RJC -- -- 5.0 50 A 1.1 1.5 V -- -- 2.2 C/W IGES ICES -- -- 20 A -- -- 6.0 2000 100 4.0 6.0 8.0 V INPUT RECTIFIER BRIDGE Reverse Leakage Current (VRRM = 1200 V) Forward Voltage (IF = 25 A) Thermal Resistance (Each Die) OUTPUT INVERTER Gate-Emitter Leakage Current (VCE = 0 V, VGE = 20 V) Collector-Emitter Leakage Current (VCE = 1200 V, VGE = 0 V) TJ = 25C TJ = 125C Gate-Emitter Threshold Voltage (IC = 10 mA, VCE = VGE) Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0) VGE(th) V(BR)CES A 1200 -- -- V VCE(SAT) Cies -- 2.5 3.5 V -- 4540 -- pF Input Gate Charge (VCE = 600 V, IC = 25 A, VGE = +15 V) QT -- 165 -- nC Fall Time -- Inductive Load (VCE = 600 V, IC = 25 A, VGE = +15 V, RG(off) = 20 ) tf -- 350 500 ns Turn-On Energy (IC = 25 A, VCE = 600 V, RG(on) = 180 ) Eon Eoff -- -- 9.0 mJ -- -- 4.5 mJ VF trr -- 1.9 2.4 V -- 150 250 ns Qrr -- -- 1050 nC Thermal Resistance -- IGBT (Each Die) RJC -- -- 1.4 C/W Thermal Resistance -- Free-Wheeling Diode (Each Die) RJC -- -- 2.2 C/W Collector-Emitter Saturation Voltage (IC = 25 A, VGE = 15 V) Input Capacitance (VGE = 0 V, VCE = 10 V, f = 1.0 MHz) Turn-Off Energy (IC = 25 A, VCE = 600 V, RG(off) = 20 ) Free Wheeling Diode Forward Voltage (IF = 25 A, VGE = 0 V) Free Wheeling Diode Reverse Recovery Time (IF = 25 A, V = 600 V, di/dt = 200 A/s) Free Wheeling Diode Stored Charge (IF = 25 A, V = 600 V, di/dt = 200 A/s) 2 Motorola IGBT Device Data MHPM7A25A120B ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit IGES ICES -- -- 20 A -- -- 6.0 2000 100 -- 4.0 6.0 8.0 V V BRAKE CIRCUIT Gate-Emitter Leakage Current (VCE = 0 V, VGE = 20 V) Collector-Emitter Leakage Current (VCE = 1200 V, VGE = 0 V) TJ = 25C TJ = 125C Gate-Emitter Threshold Voltage (VCE = VGE, IC = 10 mA) Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0) VGE(th) V(BR)CES A 1200 -- -- VCE(SAT) Cies -- 2.5 3.5 V -- 4540 -- pF Input Gate Charge (VCE = 600 V, IC = 25 A, VGE = +15 V) QT -- 165 -- nC Fall Time -- Inductive Load (VCE = 600 V, IC = 25 A, VGE = +15 V, RG(off) = 20 ) tf -- 350 500 ns Turn-On Energy (IC = 25 A, VCE = 600 V, RG(on) = 180 ) Eon Eoff -- -- 9.0 mJ -- -- 4.5 mJ VF IR -- 1.9 2.4 V -- -- 50 A Thermal Resistance -- IGBT RJC -- -- 1.4 C/W Thermal Resistance -- Output Diode RJC -- -- 2.2 C/W Rsense -- 5 -- mW Rtol -1.0 -- +1.0 % VF TCVF -- .66 -- V -- -1.95 -- mV/C Collector-Emitter Saturation Voltage (VGE = 15 V, IC = 25 A) Input Capacitance (VGE = 0 V, VCE = 10 V, f = 1.0 MHz) Turn-Off Energy (IC = 25 A, VCE = 600 V, RG(off) = 20 ) Output Diode Forward Voltage (IF = 25 A) Output Diode Reverse Leakage Current SENSE RESISTOR Resistance Resistance Tolerance TEMPERATURE SENSE DIODE Forward Voltage (@ IF = 1.0 mA) Forward Voltage Temperature Coefficient (@ IF = 1.0 mA) Motorola IGBT Device Data 3 MHPM7A25A120B Typical Characteristics 50 IF, FORWARD CURRENT (AMPS) IF, FORWARD CURRENT (AMPS) 50 40 30 20 TJ = 125C 10 40 30 20 TJ = 125C 25C 10 25C 0 0 0 0.4 0.6 0.8 1.0 1.2 VF, FORWARD VOLTAGE (VOLTS) 0.2 1.4 0 1.6 0.3 Figure 1. Forward Characteristics - Input Rectifier VGE = 18 V 15 V 40 12 V 35 30 25 20 9V 15 10 TJ = 125C 45 IC, COLLECTOR CURRENT (AMPS) 12 V 35 30 25 20 9V 15 10 5 0 0 0 1 2 3 4 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 5 0 20 IC = 13 A 18 TJ = 25C 25 A 16 14 50 A 12 10 8 6 4 2 8 10 12 14 16 18 VGE, GATE-EMITTER VOLTAGE (V) Figure 5. Collector-Emitter Voltage versus Gate-Emitter Voltage 20 1 2 3 4 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 5 Figure 4. Forward Characteristics, TJ = 125C VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3. Forward Characteristics, TJ = 25C 4 15 V 40 5 0 VGE = 18 V 900 800 18 IC = 25 A TJ = 25C 600 V 16 500 V 14 700 600 VCE = 600 V VCE = 400 V 12 500 V 500 10 400 V 400 8 300 6 200 4 100 2 0 0 10 30 70 90 110 130 50 Qg, TOTAL GATE CHARGE (nC) 150 VGE, GATE-EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (AMPS) 50 TJ = 25C 2.4 Figure 2. Forward Characteristics Free-Wheeling Diode 50 45 2.1 0.6 0.9 1.2 1.5 1.8 VF, FORWARD VOLTAGE (VOLTS) 0 170 Figure 6. Collector-Emitter and Gate-Emitter Voltages versus Total Gate Charge Motorola IGBT Device Data MHPM7A25A120B Typical Characteristics 1000 1000 toff t, TIME (ns) t, TIME (ns) toff td(off) tf tf td(off) VCE = 600 V VGE = 15 V RG(off) = 20 TJ = 25C 100 5 10 15 100 25 20 5 10 IC, COLLECTOR CURRENT (AMPS) 15 25 20 IC, COLLECTOR CURRENT (AMPS) Figure 7. Inductive Switching Times versus Collector Current, TJ = 25C Figure 8. Inductive Switching Times versus Collector Current, TJ = 125C 10000 10000 VCE = 600 V VGE = 15 V IC = 25 A TJ = 25C VCE = 600 V VGE = 15 V IC = 25 A TJ = 125C toff t, TIME (ns) t, TIME (ns) VCE = 600 V VGE = 15 V RG(off) = 20 TJ = 125C td(off) 1000 toff td(off) tf 1000 tf 100 100 10 100 RG(off), GATE RESISTANCE (OHMS) 1000 10 Figure 9. Inductive Switching Times versus Gate Resistance, TJ = 25C 1000 Figure 10. Inductive Switching Times versus Gate Resistance, TJ = 125C 250 10000 VCE = 600 V VGE = 15 V RG(on) = 180 200 tr TJ = 125C 150 t, TIME (ns) t, TIME (ns) 100 RG(off), GATE RESISTANCE (OHMS) 25C 100 tr 1000 TJ = 125C 25C VCE = 600 V VGE = 15 V IC = 25 A 50 0 100 5.0 10 15 20 IC, COLLECTOR CURRENT (AMPS) Figure 11. Inductive Switching Times versus Collector Current Motorola IGBT Device Data 25 10 100 RG(on), GATE RESISTANCE (OHMS) 1000 Figure 12. Inductive Switching Times versus Gate Resistance 5 MHPM7A25A120B Typical Characteristics 100000 E off , TURN-OFF ENERGY LOSSES ( J) E off , TURN-OFF ENERGY LOSSES ( J) 10000 TJ = 125C 1000 25C VCE = 600 V VGE = 15 V RG(off) = 20 VCE = 600 V VGE = 15 V IC = 25 A 10000 TJ = 125C 25C 1000 100 5.0 10 15 20 IC, COLLECTOR CURRENT (AMPS) 10 25 100 RG(off), GATE RESISTANCE (OHMS) Figure 13. Turn-Off Energy Losses versus Collector Current Figure 14. Turn-Off Energy Losses versus Gate Resistance 60 IC, COLLECTOR CURRENT (AMPS) C, CAPACITANCE (pF) 10000 Cies 1000 Coes 100 10 Cres 1.0 1000 0 20 40 60 80 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 50 40 30 20 +VGE = 15 V -VGE = 0 V RG(on) = 180 TJ = 25C 10 0 0 400 600 800 1000 1200 1400 1600 200 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 15. Capacitance Variation Figure 16. Reversed Biased Safe Operating Area (RBSOA) 1.0 DIODE IGBT 0.1 0.01 0.001 1.0 10 100 1000 t, TIME (ms) Figure 17. Thermal Response 6 Motorola IGBT Device Data MHPM7A25A120B ton toff td(on) L IC VCE tr td(off) tf 90% 90% OUTPUT, Vout INVERTED 10% RG 90% VCE INPUT, Vin 50% 50% 10% PULSE WIDTH Figure 18. Inductive Switching Time Test Circuit and Timing Chart Motorola IGBT Device Data 7 8 R S T 24 23 22 D9 D8 D11 D10 15 6 25 Q7 D7 5 -I 21 B = PIN NUMBER IDENTIFICATION N2 G7 7 1 N1 D13 D12 P2 P1 8 G2 16 G1 E1 9 4 +I Q2 Q1 D2 D1 10 +T C -T C 3 2 G4 17 G3 E3 11 Q8 TEMP SENSE Q4 Q3 D4 D3 G6 14 12 G5 E5 13 D6 D5 W V U 18 19 20 3-Phase Input Rectifier Bridge Brake IGBT/ Diode 3-Phase Output IGBT/Diode Bridge, with Current and Temperature Sense DEVICE INTEGRATION Q6 Q5 MHPM7A25A120B Figure 19. Integrated Power Stage Schematic Motorola IGBT Device Data MHPM7A25A120B PACKAGE DIMENSIONS E C AB AC AE K AA 9 PL AF 3 PL AD A N AH V Q 2 PL G 1 2 PL 17 L S M R B DETAIL Z Y 25 4 PL 18 AG T 4 PL P U J H X NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. LEAD LOCATION DIMENSIONS (ie: M, G, AA...) ARE TO THE CENTER OF THE LEAD. 25 PL 7 PL D F DETAIL Z CASE 440A-02 ISSUE A Motorola IGBT Device Data DIM A B C D E F G H J K L M N P Q R S T U V X Y AA AB AC AD AE AF AG AH MILLIMETERS MIN MAX 97.54 98.55 62.74 63.75 14.60 15.88 0.56 0.97 10.80 12.06 0.81 1.22 1.60 2.21 8.58 9.19 0.56 0.97 18.80 20.57 22.86 23.88 46.23 47.24 9.78 11.05 82.55 83.57 4.01 4.62 26.42 27.43 12.06 12.95 4.32 5.33 86.36 87.38 14.22 15.24 6.55 7.16 2.49 3.10 2.24 2.84 7.32 7.92 4.78 5.38 8.58 9.19 6.05 6.65 4.78 5.38 69.34 70.36 --- 5.08 INCHES MIN MAX 3.840 3.880 2.470 2.510 0.575 0.625 0.022 0.038 0.425 0.475 0.032 0.048 0.063 0.087 0.338 0.362 0.022 0.038 0.740 0.810 0.900 0.940 1.820 1.860 0.385 0.435 3.250 3.290 0.158 0.182 1.040 1.080 0.475 0.515 0.170 0.210 3.400 3.440 0.560 0.600 0.258 0.282 0.098 0.122 0.088 0.112 0.288 0.312 0.188 0.212 0.338 0.362 0.238 0.262 0.188 0.212 2.730 2.770 --- 0.200 9 MHPM7A25A120B Motorola reserves the right to make changes without further notice to any products herein. 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