1
Motorola IGBT Device Data
Integrated Power Stage for 5 hp Motor Drives
(This device is not recommended for new designs)
(This device is replaced by MHPM7A25S120DC3)
This module integrates a 3-phase input rectifier bridge, 3-phase
output inverter, brake transistor/diode, current sense resistor and
temperature sensor in a single convenient package. The output
inverter utilizes advanced insulated gate bipolar transistors (IGBT)
matched with free-wheeling diodes to give optimal dynamic
performance. It has been configured for use as a three-phase
motor drive module or for many other power switching applications.
The top connector pins have been designed for easy interfacing to
the user’s control board.
•DC Bus Current Sense Resistor Included
•Short Circuit Rated 10 µs @ 25°C, 600 V
•Temperature Sensor Included
•Pin-to-Baseplate Isolation exceeds 2500 Vac (rms)
•Convenient Package Outline
•UL Recognized
•Access to Positive and Negative DC Bus
•Visit our website at http://www.mot–sps.com/tsg/
MAXIMUM DEVICE RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
INPUT RECTIFIER BRIDGE
Peak Repetitive Reverse Voltage (TJ = 125°C) VRRM 1200 V
Average Output Rectified Current IO25 A
Peak Non-Repetitive Surge Current (1/2 cycle)(1) IFSM 200 A
OUTPUT INVERTER
IGBT Reverse Voltage VCES 1200 V
Gate-Emitter Voltage VGES ±20 V
Continuous IGBT Collector Current ICmax 25 A
Peak Repetitive IGBT Collector Current(2) IC(pk) 50 A
Continuous Free-Wheeling Diode Current IFmax 25 A
Peak Repetitive Free-Wheeling Diode Current(2) IF(pk) 50 A
IGBT Power Dissipation per die (TC = 95°C) PD75 W
Free-Wheeling Diode Power Dissipation per die (TC = 95°C) PD40 W
Junction Temperature Range TJ– 40 to +125 °C
Short Circuit Duration (VCE = 600 V, TJ = 25°C) tsc 10 µs
(1) 1 cycle = 50 or 60 Hz
(2) 1.0 ms = 1.0% duty cycle
Order this document
by MHPM7A25A120B/D
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1998
25 AMP, 1200 VOLT
HYBRID POWER MODULE
PLASTIC PACKAGE
CASE 440A–02, Style 1
REV 1
MHPM7A25A120B
2Motorola IGBT Device Data
MAXIMUM DEVICE RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
BRAKE CIRCUIT
IGBT Reverse Voltage VCES 1200 V
Gate-Emitter Voltage VGES ±20 V
Continuous IGBT Collector Current ICmax 25 A
Peak Repetitive IGBT Collector Current(2) IC(pk) 50 A
IGBT Power Dissipation PD75 W
Diode Reverse Voltage VRRM 1200 V
Continuous Output Diode Current IFmax 25 A
Peak Output Diode Current IF(pk) 50 A
TOTAL MODULE
Isolation Voltage (47–63 Hz, 1 min. duration) Viso 2500 Vac
Operating Case Temperature Range TC– 40 to +90 °C
Storage Temperature Range Tstg – 40 to +125 °C
Mounting Torque — 6.0 lb
S
in
(1) 1 cycle = 50 or 60 Hz
(2) 1.0 ms = 1.0% duty cycle
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
INPUT RECTIFIER BRIDGE
Reverse Leakage Current (VRRM = 1200 V) IR— 5.0 50 µA
Forward Voltage (IF = 25 A) VF—1.1 1.5 V
Thermal Resistance (Each Die) RθJC — — 2.2 °C/W
OUTPUT INVERTER
Gate-Emitter Leakage Current (VCE = 0 V, VGE = ±20 V) IGES — — ±20 µA
Collector-Emitter Leakage Current (VCE = 1200 V, VGE = 0 V)
TJ = 25°C
TJ = 125°C
ICES —
—6.0
2000 100 µA
Gate-Emitter Threshold Voltage (IC = 10 mA, VCE = VGE) VGE(th) 4.0 6.0 8.0 V
Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0) V(BR)CES 1200 — — V
Collector-Emitter Saturation V oltage (IC = 25 A, VGE = 15 V) VCE(SAT) — 2.5 3.5 V
Input Capacitance (VGE = 0 V, VCE = 10 V, f = 1.0 MHz) Cies —4540 — pF
Input Gate Charge (VCE = 600 V, IC = 25 A, VGE = +15 V) QT— 165 — nC
Fall T ime — Inductive Load
(VCE = 600 V, IC = 25 A, VGE = +15 V, RG(off) = 20 Ω)tf—350 500 ns
T urn-On Energy (IC = 25 A, VCE = 600 V, RG(on) = 180 Ω) Eon — — 9.0 mJ
T urn-Off Energy (IC = 25 A, VCE = 600 V, RG(off) = 20 Ω) Eoff — — 4.5 mJ
Free Wheeling Diode Forward Voltage (IF = 25 A, VGE = 0 V) VF—1.9 2.4 V
Free Wheeling Diode Reverse Recovery T ime
(IF = 25 A, V = 600 V, di/dt = 200 A/µs) trr — 150 250 ns
Free Wheeling Diode Stored Charge
(IF = 25 A, V = 600 V, di/dt = 200 A/µs) Qrr — — 1050 nC
Thermal Resistance — IGBT (Each Die) RθJC — — 1.4 °C/W
Thermal Resistance — Free-Wheeling Diode (Each Die) RθJC — — 2.2 °C/W
MHPM7A25A120B
3
Motorola IGBT Device Data
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic UnitMaxTypMinSymbol
BRAKE CIRCUIT
Gate-Emitter Leakage Current (VCE = 0 V, VGE = ±20 V) IGES — — ±20 µA
Collector-Emitter Leakage Current (VCE = 1200 V, VGE = 0 V)
TJ = 25°C
TJ = 125°C
ICES —
—6.0
2000 100
—
µA
Gate-Emitter Threshold Voltage (VCE = VGE, IC = 10 mA) VGE(th) 4.0 6.0 8.0 V
Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0) V(BR)CES 1200 — — V
Collector-Emitter Saturation V oltage (VGE = 15 V, IC = 25 A) VCE(SAT) — 2.5 3.5 V
Input Capacitance (VGE = 0 V, VCE = 10 V, f = 1.0 MHz) Cies —4540 — pF
Input Gate Charge (VCE = 600 V, IC = 25 A, VGE = +15 V) QT— 165 — nC
Fall T ime — Inductive Load
(VCE = 600 V, IC = 25 A, VGE = +15 V, RG(off) = 20 Ω)tf—350 500 ns
T urn-On Energy (IC = 25 A, VCE = 600 V, RG(on) = 180 Ω) Eon — — 9.0 mJ
T urn-Off Energy (IC = 25 A, VCE = 600 V, RG(off) = 20 Ω) Eoff — — 4.5 mJ
Output Diode Forward Voltage (IF = 25 A) VF—1.9 2.4 V
Output Diode Reverse Leakage Current IR— — 50 µA
Thermal Resistance — IGBT RθJC — — 1.4 °C/W
Thermal Resistance — Output Diode RθJC — — 2.2 °C/W
SENSE RESISTOR
Resistance Rsense — 5 — m
W
Resistance Tolerance Rtol –1.0 — +1.0 %
TEMPERATURE SENSE DIODE
Forward Voltage (@ IF = 1.0 mA) VF— .66 — V
Forward Voltage Temperature Coefficient (@ IF = 1.0 mA) TCVF —–1.95 — mV/°C
MHPM7A25A120B
4Motorola IGBT Device Data
Typical Characteristics
50
45
40
35
30
25
20
15
10
5
0012345
Figure 1. Forward Characteristics –
Input Rectifier
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (AMPS)
VGE = 18 V 15 V
12 V
9 V
TJ = 25
°
C50
45
40
35
30
25
20
15
10
5
001 2 3 4 5
Figure 2. Forward Characteristics
Free–Wheeling Diode
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (AMPS)
Figure 3. Forward Characteristics, TJ = 25°C Figure 4. Forward Characteristics, TJ = 125°C
Figure 5. Collector–Emitter Voltage
versus Gate–Emitter Voltage Figure 6. Collector–Emitter and Gate–Emitter
Voltages versus Total Gate Charge
TJ = 125
°
CVGE = 18 V 15 V
12 V
9 V
030 110
Q
g
, TOTAL GATE CHARGE (nC)
10
700
0
500
200
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
600
400
300
100
50
VGE, GATE–EMITTER VOLTAGE (VOLTS)
18
16
14
12
10
8
6
4
2
0
9070
VCE = 400 V
500 V
600 V
800
900
130 150 170
50
30
0
40
20
IF, FORWARD CURRENT (AMPS)
10
0VF, FORWARD VOLTAGE (VOLTS)
0.3 0.6 0.9 2.41.2 1.5
TJ = 125
°
C25
°
C
50
30
00VF, FORWARD VOLTAGE (VOLTS)
40
20
0.2
TJ = 125
°
C
25
°
C
IF, FORWARD CURRENT (AMPS)
10
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.1
VCE = 600 V
500 V
400 V
IC = 25 A
TJ = 25
°
C
10
8
6
4
2
08 1012141618
V
GE, GATE–EMITTER VOLTAGE (V)
IC = 13 A
25 A
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
50 A
TJ = 25
°
C
12
14
16
18
20
20
MHPM7A25A120B
5
Motorola IGBT Device Data
Typical Characteristics
10000
10010 100 1000
Figure 7. Inductive Switching Times
versus Collector Current, TJ = 25°C
RG(off), GATE RESISTANCE (OHMS)
250
100
05.0 25
Figure 8. Inductive Switching Times
versus Collector Current, TJ = 125°C
IC, COLLECTOR CURRENT (AMPS)
1000
VCE = 600 V
VGE = 15 V
IC = 25 A
TJ = 125
°
C
tf
td(off)
toff
VCE = 600 V
VGE = 15 V
RG(on) = 180
Ω
200
50
10 15
TJ = 125
°
C
25
°
C
10000
10010 100 1000
Figure 9. Inductive Switching Times
versus Gate Resistance, TJ = 25°C
RG(on), GATE RESISTANCE (OHMS)
Figure 10. Inductive Switching Times
versus Gate Resistance, TJ = 125°C
1000
VCE = 600 V
VGE = 15 V
IC = 25 A
TJ = 125
°
C25
°
C
Figure 11. Inductive Switching Times
versus Collector Current Figure 12. Inductive Switching Times
versus Gate Resistance
20
150
10000
1000
10010 100 1000
RG(off), GATE RESISTANCE (OHMS)
VCE = 600 V
VGE = 15 V
IC = 25 A
TJ = 25
°
C
tf
toff
td(off)
1000
100 51015 25
I
C
, COLLECTOR CURRENT (AMPS)
tf
td(off)
toff
20
VCE = 600 V
VGE = 15 V
RG(off) = 20
Ω
TJ = 125
°
C
1000
100 51015 25
I
C
, COLLECTOR CURRENT (AMPS)
t, TIME (ns)
tf
td(off)
toff
20
VCE = 600 V
VGE = 15 V
RG(off) = 20
Ω
TJ = 25
°
C
t, TIME (ns)t, TIME (ns)
t, TIME (ns)t, TIME (ns)t, TIME (ns)
tr
tr
MHPM7A25A120B
6Motorola IGBT Device Data
Typical Characteristics
10000
10
0 100
Figure 13. Turn–Off Energy Losses
versus Collector Current
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 14. Turn–Off Energy Losses
versus Gate Resistance
C, CAPACITANCE (pF)
1000
Figure 15. Capacitance Variation
60
00 200 1000
Figure 16. Reversed Biased Safe
Operating Area (RBSOA)
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
40
100
20 40 60 80
Cies
Coes
Cres
IC, COLLECTOR CURRENT (AMPS)
20 +VGE = 15 V
–VGE = 0 V
RG(on) = 180
Ω
TJ = 25
°
C
400 600 800 1200 1400
Figure 17. Thermal Response
1.0
0.1
0.01
0.001
1.0 10 100 1000
t, TIME (ms)
DIODE IGBT
r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
1.0
100000
100010 100 1000
RG(off), GATE RESISTANCE (OHMS)
VCE = 600 V
VGE = 15 V
IC = 25 A
TJ = 125
°
C
25
°
C
10000
µ
, TURN–OFF ENERGY LOSSES ( J)Eoff
50
30
10
1600
5.0 15
IC, COLLECTOR CURRENT (AMPS)
VCE = 600 V
VGE = 15 V
RG(off) = 20
Ω
10
TJ = 125
°
C
25
°
C
µ
, TURN–OFF ENERGY LOSSES ( J)
10000
1000
100 20 25
Eoff
MHPM7A25A120B
7
Motorola IGBT Device Data
Figure 18. Inductive Switching Time Test Circuit and Timing Chart
OUTPUT, Vout
INVERTED
INPUT, Vin 10% 50% 90%
50%
90%
90%
tr
10%
tf
td(off)
td(on)
ton toff
PULSE WIDTH
LVCE
VCE
IC
RG
MHPM7A25A120B
8Motorola IGBT Device Data
Figure 19. Integrated Power Stage Schematic
U
V
W
20
19
18
24
23
22
R
S
T
17
8
911
10
2
3
45625
= PIN NUMBER IDENTIFICATION
21
16 17 14
12
13
15
–I +IN2N1 TEMP SENSE
E5
G5
D3
E3
G3
D5D1
E1
G1
Q1 Q3 Q5
G6
D4
G4
D6D2
G2
Q2 Q4 Q6
P1 P2
G7
Q8
+TC
–TC
Q7
B
IGBT/
DEVICE INTEGRATION
3–Phase
Output
IGBT/Diode
Bridge,
with Current
and Temperature
Sense
Brake
Diode
3–Phase
Input
Rectifier
Bridge
D8 D10 D12 D7
D9 D11 D13
MHPM7A25A120B
9
Motorola IGBT Device Data
PACKAGE DIMENSIONS
CASE 440A–02
ISSUE A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. LEAD LOCATION DIMENSIONS (ie: M, G, AA...)
ARE TO THE CENTER OF THE LEAD.
E
AFAC
AB
AD
AE AA
3 PL
9 PL
CK
25 18
171
2 PL
AH
AG
P
U
A
NG
L
M
4 PL
Y
4 PL
X
2 PL
Q
B
R
S
DETAIL Z
H
7 PL
J
25 PL
V
T
F
D
DETAIL Z
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A97.54 98.55 3.840 3.880
B62.74 63.75 2.470 2.510
C14.60 15.88 0.575 0.625
D0.56 0.97 0.022 0.038
E10.80 12.06 0.425 0.475
F0.81 1.22 0.032 0.048
G1.60 2.21 0.063 0.087
H8.58 9.19 0.338 0.362
J0.56 0.97 0.022 0.038
K18.80 20.57 0.740 0.810
L22.86 23.88 0.900 0.940
M46.23 47.24 1.820 1.860
N9.78 11.05 0.385 0.435
P82.55 83.57 3.250 3.290
Q4.01 4.62 0.158 0.182
R26.42 27.43 1.040 1.080
S12.06 12.95 0.475 0.515
T4.32 5.33 0.170 0.210
U86.36 87.38 3.400 3.440
V14.22 15.24 0.560 0.600
X6.55 7.16 0.258 0.282
Y2.49 3.10 0.098 0.122
AA 2.24 2.84 0.088 0.112
AB 7.32 7.92 0.288 0.312
AC 4.78 5.38 0.188 0.212
AD 8.58 9.19 0.338 0.362
AE 6.05 6.65 0.238 0.262
AF 4.78 5.38 0.188 0.212
AG 69.34 70.36 2.730 2.770
AH ––– 5.08 ––– 0.200
MHPM7A25A120B
10 Motorola IGBT Device Data
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MHPM7A25A120B/D
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