1) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
2) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
01.11.2003
2.5
max
1.3
±0.1
1.1
2.9
±0.1
0.4
12
3
Type
Code
1.9
BCW 61 General Purpose Transistors
PNP Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP
Power dissipation – Verlustleistung 250 mW
Plastic case SOT-23
Kunststoffgehäuse (TO-236)
Weight approx. – Gewicht ca. 0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Dimensions / Maße in mm
1 = B 2 = E 3 = C
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C)
BCW 61
Collector-Emitter-voltage B open - VCE0 32 V
Collector-Base-voltage E open - VCB0 32 V
Emitter-Base-voltage C open - VEB0 5 V
Power dissipation – Verlustleistung Ptot 250 mW 1)
Collector current – Kollektorstrom (DC) - IC100 mA
Peak Collector current – Kollektor-Spitzenstrom - ICM 200 mA
Peak Base current – Basis-Spitzenstrom - IBM 200 mA
Junction temperature – Sperrschichttemperatur Tj150/C
Storage temperature – Lagerungstemperatur TS- 65…+ 150/C
Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C)
Min. Typ. Max.
Collector-Base cutoff current – Kollektorreststrom
IE = 0, - VCB = 32 V - ICB0 – – 20 nA
IE = 0, - VCB = 32 V, Tj = 150/C- I
CB0 – – 20 :A
Emitter-Base cutoff current – Emitterreststrom
IC = 0, - VEB = 4 V - IEB0 – – 20 nA
Collector saturation volt. – Kollektor-Sättigungsspg. 2)
- IC = 10 mA, - IB = 0.25 mA - VCEsat 60 mV – 250 mV
- IC = 50 mA, - IB = 1.25 mA - VCEsat 120 mV – 550 mV
3) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
4) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
01.11.2003
General Purpose Transistors BCW 61
Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C)
Min. Typ. Max.
Base saturation voltage – Basis-Sättigungsspannung 1)
- IC = 10 mA, - IB = 0.25 mA - VBEsat 600 mV – 850 mV
- IC = 50 mA, - IB = 1.25 mA - VBEsat 700 mV – 1050 mV
DC current gain – Kollektor-Basis-Stromverhältnis 3)
- VCE = 5 V, - IC = 10 :A
BCW 61B hFE 30 – –
BCW 61C hFE 40 – –
BCW 61D hFE 100 – –
- VCE = 5 V, - IC = 2 mA
BCW 61B hFE 180 – 310
BCW 61C hFE 250 – 460
BCW 61D hFE 380 – 630
- VCE = 1 V, - IC = 50 mA
BCW 61B hFE 80 – –
BCW 61C hFE 90 – –
BCW 61D hFE 100 – –
Base-Emitter voltage – Basis-Emitter-Spannung 1)
- VCE = 5 V, - IC = 10 :A- V
BEon – 550 mV –
- VCE = 5 V, - IC = 2 mA - VBEon 600 mV 650 mV 750 mV
- VCE = 1 V, - IC = 50 mA - VBEon – 720 mV –
Gain-Bandwidth Product – Transitfrequenz
- VCE = 5 V, - IC = 10 mA, f = 100 MHz fT100 MHz – –
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE = ie = 0, f = 1 MHz CCB0 – 4.5 pF –
Emitter-Base Capacitance – Emitter-Basis-Kapazität
- VEB = 0.5 V, IC = ic = 0, f = 1 MHz CEB0 – 11 pF –
Noise figure – Rauschzahl
- VCE = 5 V, - IC = 200 :A, RG = 2 kS,
f = 1 kHz, )f = 200 Hz F – 2 dB 6 dB
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft RthA 420 K/W 4)
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren BCW 60 series
Marking – Stempelung BCW 61B = BB BCW 61C = BC BCW 61D = BD
