UTC 2SC2482 NPN EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD 1
QW-R211-015,A
NPN EPITAXIAL PLANAR
TRANSISTOR
APPLICATIONS
*HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATIONS
*COLOR TV HORIZ. DRIVER APPLICATIONS
*COLOR TV CHROMA OUTPUT APPLICATIONS
FEATURES
*High Voltage :V(BR)CEO= 300V
*Small Collector Output Capacitance: Cob=3.0pF(Typ.) TO-92NL
1
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C )
PARAMETER SYMBOL LIMITS UNIT
Collector-Base Voltage VCBO 300 V
Collector-Emitter Voltage VCEO 300 V
Emitter-Base Voltage VEBO 7 V
Collector Current Ic 100 mA
Base Current IB 50 mA
Collector Power Dissipation Pc 900 mW
Junction Temperature Tj 150 °C
Storage Temperature TSTG -55 ~ +150 °C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector Cut-Off Current ICBO VCB=240V IE= 0 1.0 μA
Emitter Cut-Off Current IEBO VEB= 7V Ic=0 1.0 μA
hFE(1) VCE=10V,Ic=4mA 20 DC Current Gain
hFE(2) VCE=10V,Ic=20mA 30 150
Collector-Emitter Saturation Voltage VCE(sat) Ic=10mA,IB=1mA 1.0 V
Base- Emitter Saturation Voltage VBE(sat) Ic=10mA,IB=1mA 1.0 V
Transition Frequency fT VCE=10V, Ic=20mA 50 MHz
Collector Output Capacitance Cob VCB=20V, IE= 0, f=1MHz 3.0 pF
UTC 2SC2482 NPN EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD 2
QW-R211-015,A
ELECTRICAL CHARACTERISTICS CURVES
Ic-V CE
Collector -Emitter Voltage Vc E(V)
Collector Curr ent Ic (m A)
04 812
0
20
40
60
80
20
100
16
hFE - Ic
Collector Current Ic
(mA)
0.3 1 3
10
30
50
10
100
300
30
500
IB=0.2mA
1
2
3
0.4
DC Current Gain hFE
Ta=25 ℃
24
120
0.6
46
Ta=100 ℃
Common Emi tter
Ta=25 ℃
100
Ta=-25 ℃
hFE - Ic
Collector Current Ic
(mA)
0.3 1 3
10
30
50
10
100
300
30
500
DC Current Gain hFE
100
Common Emi tter
Ta=25 ℃
Common Emi tter
VCE =10V
VCE=20V
VCE =10V
VCE =5V
Collector Current Ic
(mA)
0.3 1 3
0.05
0.1
0.3
10
1
3
30
5
Collector-Emiitter Saturation
Voltage V CE (sat)(V)
100
Common Emitter
Ta=25 ℃
IC/IB=10
VCE(sat)-Ic
5
2
Collector Current Ic
(mA)
0.3 1 3 10 30
Collector-Emiitter Saturation
Voltage V CE(sat)(V)
100
Common Emitter
IC/IB=5
VCE (sat)-Ic
0.5
0.05
0.1
0.3
1
3
5
0.5
Ta=25 ℃
Ta=100 ℃
Ta=-25 ℃
Collector Current Ic
(mA)
0.3 1 3 10 30
Base-Emitter Saturation Voltage
VBE(sat)(V)
100
Common Emi tter
Ta=25 ℃
0.1
0.3
1
3
5
0.5
IC/IB=5
VBE(sat)-Ic
UTC 2SC2482 NPN EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD 3
QW-R211-015,A
Ic-V BE
Base -Emitter Voltage V BE(V)
Collector C ur rent Ic (m A)
0.2 0.4 0.6 0.8
0
20
40
60
1.0
80
Common Emitter
VCE=10 V
Cob-V CB
Collector- Base Voltag e
VCB(V)
13 10
1
3
5
30
10
100
30
Collector Output Capacitance
Cob(pF)
300
1.2
Ta=-25 ℃
Ta= 100 ℃
Ta=25℃
50 IE=0
f=1MHz
Collector -Emitter Voltag e V CE(V)
Safe Oper ating Area
Collector Current-Ic(mA)
PT=1s
303100
2
10
5
Collector Current Ic(mA)
30
*Sing le Nonr epetitive
Pulse Ta=25 ℃
10 300
50
100
300
1ms
10ms*
100ms*
Ic MAX.(PULSED)*
Ic MAX. (CO NI NUO US)
Ta=25℃
Curves Must Be Derated
Linearly With Increase In
Temperature
DC Operation
100
fT -Ic
Collector C ur rent Ic
(mA)
0.3 1 3
10
30
50
10
100
300
30
500
Tr ansi tion Fr equency fT(M Hz)
100
Common Emitter
Ta=25 ℃
VCE=20V
VCE =10V
VCE=5V
Ta=25 ℃
500ms*
30 μs*
VCEO MAX
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
