Product Data Sheet July 8, 2011 Ku Band 6.5 W Power Amplifier TGA2514 Key Features * * * * * * * * * * * Frequency Range: 13 - 18 GHz 38.5 dBm Nominal Psat from 13.75 - 14 GHz 38 dBm Nominal Psat from 13-16 GHz 37.5 dBm Nominal Psat from 16-18 GHz 33 dBc IMD3 @ 27 dBm Pout/tone @ 14 GHz 24 dB Nominal Gain 12 dB Nominal Return Loss 0.25-m 3MI pHEMT Technology Bias Conditions: 8 V @ 2.6 A Idq Chip size: 2.87 x 3.90 x .10 mm (0.113 x 0.154 x 0.004) Primary Applications Product Description The TriQuint TGA2514 is a compact 6.5 W Ku-band Power Amplifier which operates from 13-18 GHz. The TGA2514 is designed using TriQuint's proven standard 0.25-m gate pHEMT production process. * * Ku band VSAT Transmitter Point to Point Radio Measured Fixtured Data Bias Conditions: Vd = 8 V, Idq = 2.6A The TGA2514 provides a nominal 38 dBm of saturated power with a small signal gain of 24 dB. Typical return loss is 14 dB. The TGA2514 is 100% DC and RF tested on-wafer to ensure performance compliance. Note: Datasheet is subject to change without notice. 1 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Product Data Sheet July 8, 2011 TGA2514 TABLE I Absolute Maximum Ratings 1/ Symbol Parameter V+ Positive Supply Voltage V- Negative Supply Voltage Range Id Drain Current Ig Gate Current Range Pin Input Continuous Wave Power Tchannel Channel Temperature Value Notes 9V 2/ -5V TO 0V 3.8 A 2/ -18 to 18 mA 21 dBm 2/ 200 C 1/ These ratings represent the maximum operable values for this device. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device and/or affect device lifetime. These are stress ratings only, and functional operation of the device at these conditions is not implied. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed maximum power dissipation listed in Table IV. 2 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Product Data Sheet July 8, 2011 TABLE II RF CHARACTERIZATION TABLE (TA = 25C, Nominal) (Vd = 8V, Id = 2.6 A) TGA2514 SYMBOL PARAMETER TEST CONDITION TYPICAL UNITS Gain Small Signal Gain f = 13-18 GHz 24 dB IRL Input Return Loss f = 13-18 GHz 12 dB ORL Output Return Loss f = 13-18 GHz 12 dB Psat Saturated Power f = 13-16 GHz f = 16-18 GHz 38 37.5 dBm TOI Third Order Intercept @ Pout/tone = 27dBm f = 14 GHz 44 dBm IMD3 Output IMD3 @ Pout/tone = 27 dBm f = 14 GHz 33 dBc Note: Table III Lists the RF Characteristics of typical devices as determined by fixtured measurements. 3 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Product Data Sheet July 8, 2011 Parameter Maximum Power Dissipation TGA2514 TABLE III Power Dissipation and Thermal Properties Test Conditions Value Tbaseplate = 70 Pd = 33.3 W Tchannel = 200 C jc = 3.9 C/W Tchannel = 151 C Tm = 9.3E5 hrs Thermal Resistance, jc Vd = 8V Id = 2.6 A Pd = 20.8 W Thermal Resistance, jc Under RF Drive Vd = 8 V Id = 3.6 A Pout = 38 dBm Pd = 22.5 W jc = 3.9 C/W Tchannel = 158 C Tm = 5.2E5 hrs Mounting Temperature Storage Temperature 30 Seconds 320C -65 to 150C Median Lifetime (Tm) vs. Channel Temperature (Tch) Median Lifetime, Tm (Hours) 1.E+15 1.E+14 1.E+13 1.E+12 1.E+11 1.E+10 1.E+09 1.E+08 1.E+07 1.E+06 1.E+05 FET3 1.E+04 25 50 75 100 125 150 175 200 Channel Temperature, Tch (C) 4 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Product Data Sheet July 8, 2011 Measured Fixture Data TGA2514 Bias Conditions: Vd = 8 V, Idq = 2.6A 5 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Product Data Sheet July 8, 2011 Measured Fixture Data TGA2514 Bias Conditions: Vd = 8 V, Idq = 2.6A 6 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Product Data Sheet July 8, 2011 TGA2514 Measured Fixture Data Bias Conditions: Vd = 8 V, Idq = 2.6A 7 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Product Data Sheet July 8, 2011 TGA2514 Recommended Chip Assembly Diagram 10 Vg Vd 1 F 1 F 20 mil ribbon 10 1 F Vg Vd 1 F Notes: 1. Vg can be connected from either side, but 100 pf, 0.01 uf , 1uf caps and 10 ohm resistor are needed for both sides. 2. Vd connection must be biased from both sides. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 8 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Product Data Sheet July 8, 2011 TGA2514 2.732 (0.108) 2.358 (0.093) 3.903 (0.154) 1.113 (0.044) 0.722 (0.028) Mechanical Drawing 3.742 (0.147) 2 3.748 (0.148) 3 4 2.764 (0.109) 5 1.136 (0.045) 1 0.148 (0.006) 8 7 0.161 (0.006) 6 2.872 (0.113) 2.358 (0.093) 1.113 (0.044) 0.722 (0.028) 0.000 (0.000) 0.142 (0.006) 0.000 (0.000) Units: Millimeters (inches) Thickness: 0.100 (0.004) (reference only) Chip edge to bond pad dimensions are shown to center of bond pad Chip size +/- 0.05 (0.002) GND IS BACKSIDE OF MMIC Bond pad #1 Bond pads #2, 8 Bond pads #3, 7 Bond pads # 4, 6 Bond pad #5 RF Input Vg Vd Vd RF Output 0.096 x 0.200 (0.004 x 0.008) 0.098 x 0.098 (0.004 x 0.004) 0.198 x 0.100 (0.008 x 0.004) 0.296 x 0.178 (0.012 x 0.007) 0.096 x 0.200 (0.004 x 0.008) GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 9 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Product Data Sheet July 8, 2011 TGA2514 Assembly Process Notes Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300C (for 30 sec max). An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: * * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire. Maximum stage temperature is 200C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 10 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com