Product Data Sheet
July 8, 2011
1
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Ku Band 6.5 W Power Amplifier TGA2514
Primary Applications
•Ku band VSAT Transmitter
•Point to Point Radio
Key Features
•Frequency Range: 13 - 18 GHz
•38.5 dBm Nominal Psat from 13.75 - 14 GHz
•38 dBm Nominal Psat from 13-16 GHz
•37.5 dBm Nominal Psat from 16-18 GHz
•33 dBc IMD3 @ 27 dBm Pout/tone @ 14 GHz
•24 dB Nominal Gain
•12 dB Nominal Return Loss
•0.25-µm 3MI pHEMT Technology
•Bias Conditions: 8 V @ 2.6 A Idq
•Chip size: 2.87 x 3.90 x .10 mm
•(0.113 x 0.154 x 0.004)
Measured Fixtured Data
Bias Conditions: Vd = 8 V, Idq = 2.6A
Product Description
The TriQuint TGA2514 is a compact 6.5
W Ku-band Power Amplifier which
operates from 13-18 GHz. The TGA2514
is designed using TriQuint’s proven
standard 0.25-µm gate pHEMT
production process.
The TGA2514 provides a nominal 38
dBm of saturated power with a small
signal gain of 24 dB. Typical return loss
is 14 dB.
The TGA2514 is 100% DC and RF tested
on-wafer to ensure performance
compliance.
Note: Datasheet is subject to change without notice.
Product Data Sheet
July 8, 2011
2
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
TABLE I
Absolute Maximum Ratings 1/
Symbol Parameter Value Notes
V+
Positive Supply Voltage 9 V 2/
V-
Negative Supply Voltage Range -5V TO 0V
Id
Drain Current 3.8 A 2/
Ig
Gate Current Range -18 to 18 mA
Pin
Input Continuous Wave Power 21 dBm 2/
Tchannel
Channel Temperature 200 °C
1/ These ratings represent the maximum operable values for this device. Stresses beyond those
listed under “Absolute Maximum Ratings” may cause permanent damage to the device and/or
affect device lifetime. These are stress ratings only, and functional operation of the device at
these conditions is not implied.
2/ Combinations of supply voltage, supply current, input power, and output power shall not
exceed maximum power dissipation listed in Table IV.
TGA2514
Product Data Sheet
July 8, 2011
3
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
TABL E II
RF CHARACTERIZATION TABLE
(TA = 25°C, Nominal )
(Vd = 8V, Id = 2.6 A)
SYMBOL PARAMETER TEST
CONDITION TYPICAL UNITS
Gain Small Signal Gain f = 13-18 GHz 24 dB
IRL Input Return Loss f = 13-18 GHz 12 dB
ORL Output Return Loss f = 13-18 GHz 12 dB
Psat Saturated Power f = 13-16 GHz
f = 16-18 GHz
38
37.5 dBm
TOI Third Order Intercept
@ Pout/tone = 27dBm f = 14 GHz 44 dBm
IMD3 Output IMD3 @
Pout/tone = 27 dBm f = 14 GHz 33 dBc
Note: Table III Lists the RF Characteristics of typical devices as determined by
fixtured measurements.
TGA2514
Product Data Sheet
July 8, 2011
4
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
TABLE III
Power Dissipation and Thermal Properties
Parameter Test Conditions Value
Maximum Power
Dissipation
Tbaseplate = 70 Pd = 33.3 W
Tchannel = 200 °C
Thermal Resistance, θjc Vd = 8V
Id = 2.6 A
Pd = 20.8 W
θjc = 3.9 °C/W
Tchannel = 151 °C
Tm = 9.3E5 hrs
Thermal Resistance, θjc
Under RF Drive
Vd = 8 V
Id = 3.6 A
Pout = 38 dBm
Pd = 22.5 W
θjc = 3.9 °C/W
Tchannel = 158 °C
Tm = 5.2E5 hrs
Mounting Temperature 30 Seconds 320°C
Storage Temperature -65 to 150°C
TGA2514
1.E+04
1.E+05
1.E+06
1.E+07
1.E+08
1.E+09
1.E+10
1.E+11
1.E+12
1.E+13
1.E+14
1.E+15
25 50 75 100 125 150 175 200
Median Lifetime, Tm (Hours)
Channel Temperature, Tch (°C)
Median Lifetime (Tm) vs. Channel Temperature (Tch)
FET3
Product Data Sheet
July 8, 2011
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TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Bias Conditions: Vd = 8 V, Idq = 2.6A
Measured Fixture Data TGA2514
Product Data Sheet
July 8, 2011
6
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Bias Conditions: Vd = 8 V, Idq = 2.6A
Measured Fixture Data TGA2514
Product Data Sheet
July 8, 2011
7
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Bias Conditions: Vd = 8 V, Idq = 2.6A
Measured Fixture Data TGA2514
Product Data Sheet
July 8, 2011
8
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Vg
Vg
Vd
Vd
Recommended Chip Assembly Diagram
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
20 mil ribbon
Notes:
1. Vg can be connected from either side, but 100 pf, 0.01 uf , 1uf caps and 10 ohm resistor are
needed for both sides.
2. Vd connection must be biased from both sides.
10 Ω
1 μF
10 Ω
1 μF1 μF
1 μF
TGA2514
Product Data Sheet
July 8, 2011
9
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Mechanical Drawing
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
0.000 (0.000)
0.148 (0.006)
1.136 (0.045)
3.748 (0.148)
3.903 (0.154)
0.161 (0.006)
2.764 (0.109)
3.742 (0.147)
0.000 (0.000)
0.142 (0.006)
0.722 (0.028)
1.113 (0.044)
2.358 (0.093)
2.872 (0.113)
0.722 (0.028)
1.113 (0.044)
2.358 (0.093)
2.732 (0.108)
1
234
5
6
7
8
Units: Millimeters (inches)
Thickness: 0.100 (0.004) (reference only)
Chip edge to bond pad dimensions are shown to center of bond pad
Chip size +/- 0.05 (0.002)
GND IS BACKSI DE OF MMIC
RF Input
Vg
Vd
Vd
RF Output
Bond pad #1
Bond pads #2, 8
Bond pads #3, 7
Bond pads # 4, 6
Bond pad #5
0.096 x 0.200 (0.004 x 0.008)
0.098 x 0.098 (0.004 x 0.004)
0.198 x 0.100 (0.008 x 0.004)
0.296 x 0.178 (0.012 x 0.007)
0.096 x 0.200 (0.004 x 0.008)
TGA2514
Product Data Sheet
July 8, 2011
10
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Assembly Process Notes
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Reflow process assembly notes:
• Use AuSn (80/20) solder with limited exposure to temperatures at or above 300°C
(for 30 sec max).
• An alloy station or conveyor furnace with reducing atmosphere should be used.
• No fluxes should be utilized.
• Coefficient of thermal expansion matching is critical for long-term reliability.
• Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
• Vacuum pencils and/or vacuum collets are the preferred method of pick up.
• Air bridges must be avoided during placement.
• The force impact is critical during auto placement.
• Organic attachment can be used in low-power applications.
• Curing should be done in a convection oven; proper exhaust is a safety concern.
• Microwave or radiant curing should not be used because of differential heating.
• Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
• Thermosonic ball bonding is the preferred interconnect technique.
• Force, time, and ultrasonics are critical parameters.
• Aluminum wire should not be used.
• Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire.
• Maximum stage temperature is 200°C.
TGA2514
