(1) Gummel-Poon Model
Parameters Q1, Q2 Parameters Q1, Q2
IS 3.84e-16 MJC 0.5
BF 124.9 XCJC 0
NF 1.04 CJS 0
VAF 11.87 VJS 0.75
IKF 0.027 MJS 0
ISE 1e-14 FC 0.5
NE 2.17 TF 10e-12
BR 1.0 XTF 18.0
NR 1.05 VTF 19.12
VAR Infinity ITF 0.082
IKR Infinity PTF 0
ISC 0 TR 0.635e-9
NC 2.0 EG 1.11
RE 0.6 XTB 0
RB 17.88 XTI 3
RBM 1.02 KF 0
IRB 4.01e-4 AF 1
RC 10.46
CJE 0.358e-12
VJE 0.711
MJE 0.5
CJC 0.21e-12
VJC 0.791
BJT NONLINEAR MODEL PARAMETERS(1)
MODEL RANGE
Frequency: 0.1 to 3.0 GHz
Bias: VCE =0.5 V to 5 V, IC = 0.5 mA to 10 mA
Date: 10/98
UPA800T NONLINEAR MODEL
UNITS
Parameter Units
time seconds
capacitance farads
inductance henries
resistance ohms
voltage volts
current amps
UPA800T
NPN SILICON HIGH
FREQUENCY TRANSISTOR
UPA800T
SCHEMATIC
MODEL RANGE
Frequency: 0.1 to 3.0 GHz
Bias: VCE =0.5 V to 5 V, IC = 0.5 mA to 10 mA
Date: 10/98
Pin 1
Pin 2
Pin 3 Pin 4
Pin 5
Pin 6
0.07 pF
CCEPKG2
CCBPKG2
0.5 nH
0.12 pF
CCE2
CCB2
0.12 pF
CCE1
0.06 pF
1.05 nH
0.4 nH 0.05 nH
1.0 nH
Q1
Q2
CCBPKG1
CCB1
LE1
LB1 LB
0.05 nH
LB
0.05 nH
LE
C_B2E2
0.05 pF
C_B1B2
0.05 pF
LB2
LE2
C_C1B2 0.1 pF
LC
0.05 nH
LC
0.05 nH
LE
0.05 nH
C_E1C2
C_C1E1
0.05 pF
0.5 pF
C_E1B2
0.1 pF
0.1 pF
0.06 pF
0.06 pF
UPA800T NONLINEAR MODEL
EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
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PRINTED IN USA ON RECYCLED PAPER -11/98
DATA SUBJECT TO CHANGE WITHOUT NOTICE
