Silicon Tuning Diode BB 833 Features Extented frequency range up to 2.5 GHz; special design for use in TV-SAT indoor units High capacitance ratio Type Ordering Code (tape and reel) Pin Configuration 1 2 Marking Package BB 833 Q62702-B628 C white X SOD-323 A Maximum Ratings Parameter Symbol Values Unit Reverse voltage VR 30 V Reverse voltage (R 5 k) VRM 35 Forward current IF 20 Operating temperature range Top - 55 ... + 150 C Storage temperature range Tstg - 55 ... + 150 Rth JA mA Thermal Resistance Junction - ambient Semiconductor Group 1 450 K/W 04.96 BB 833 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. - - - - 20 500 8.5 0.6 9.3 0.75 10 0.9 Reverse current VR = 30 V VR = 30 V, TA = 85 C IR nA Diode capacitance f = 1 MHz,VR = 1 V VR = 28 V CT Capacitance ratio f = 1 MHz, VR = 1 V, 28 V CT1 CT28 11 12.4 - - Capacitance matching f = 1 MHz, VR = 1 V ... 28 V CT - - 3 % Series resistance CT = 9 pF, f = 470 MHz rs - 1.8 - Series inductance Ls - - - nH pF CT Diode capacitance CT = f (VR) f = 1 MHz Semiconductor Group 2