Semiconductor Group 1 04.96
Silicon Tuning Diode BB 833
Features
●Extented frequency range up to 2.5 GHz;
special design for use in TV-SAT indoor units
●High capacitance ratio
Maximum Ratings
Type Ordering Code
(tape and reel) Marking PackagePin Configuration
12
BB 833 Q62702-B628 white X SOD-323
C A
VRMReverse voltage (R≥5kΩ)35
Parameter Symbol Values Unit
Reverse voltage VR30 V
Forward current IF20 mA
Operating temperature range Top – 55 … + 150 ˚C
Storage temperature range Tstg – 55 … + 150
Thermal Resistance
Junction - ambient Rth JA ≤ 450 K/W
BB 833
Semiconductor Group 2
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Diode capacitance CT = f (VR)
f= 1 MHz
Parameter Symbol
min. typ.
UnitValues
max.
Reverse current
VR = 30 V
VR = 30 V, TA = 85 ˚C
IRnA
–
––
–20
500
Diode capacitance
f
= 1 MHz,VR = 1 V
VR = 28 V
CTpF
8.5
0.6 9.3
0.75 10
0.9
Capacitance matching
f= 1 MHz, VR = 1 V … 28 V ∆CT
CT%––3
Capacitance ratio
f
= 1 MHz, VR = 1 V,28 V CT1
CT28 –11 12.4 –
Series inductance LsnH–––
Series resistance
CT= 9 pF, f= 470 MHz rsΩ– 1.8 –
