WESTCODE SEMICONDUCTORS Gy) WESTCODE @ SEMICONDUCTORS 35E 0 me 9709955 0002389 High Frequency Inverter Grade Capsule Thyristor Type R216C distributed amplified gate for high di/dt and low switching losses 560 amperes average: up to 1200 volts VeowVorm Ratings (Maximum values at 125C Tj unless stated otherwise) MUESBYI a SOs Technical Publication TR216C Issue 2 May 1985 RATING CONDITIONS SYMBOL 58C heatsink temperature 560 A Average on-state current Half sine wave (double side cooled) hav) 85C heatsink temperature 215A (single side cooled) R.M.S. on-state current 25C heatsink temperature, double side cooled hams) 1125 A Continuous on-state current 25C heatsink temperature, double side cooled 925 A Peak one-cycle surge 10ms duration, 60% Vag, re-applied brs (1) 6300 A (non-repetitive) on state current 10ms duration, Vas 10 volts Frsm 2) 6900 A . ws 10ms duration, Vas 10 volts (t 240 x 108 A2s Maximum permissible surge energy 3ms duration, Va< 10 volts it 180 x 103 As Peak forward gate current Anode positive with respect to cathode leam 11A Peak forward gate voltage Anode positive with respect to cathode Vecu 13.5 V Peak reverse gate voltage Vacm 5V Average gate power Pg 15W Peak gate power 100us. pulse width Pom 60 W Rate of rise of off-state voltage To 80% Vpam gate open-circuit dv/dt *200 V/yus Rate of rise of on-state current di/dt (1) 500 A/us (repetitive) Gate drive 20 voits, 20 ohms witht, < thus. Rate of rise of on-state current Anode voltage < 80% Vonm di/dt (2) 1000 A/us (non-repetitive) Operating temperature range Ths 40+ 125C Storage temperature range Tg 40+ 150C Characteristics (Maximum values at 125C Tj unless stated otherwise) CHARACTERISTIC CONDITIONS SYMBOL Peak on-state voltage At 1000 A, ly Vim 1.85 V Forward conduction threshold voltage Vo 1.23 V Forward conduction slope resistance r 0.62 mQ Repetitive peak off-state current At Vorm loan 60 mA Repetitive peak reverse current At Varm lana 60 mA Maximum gate current required to fire all devices let 200 mA Maximum gate voltage required to fire all devices i At 25C, V,=6V,1,=1A { Ver 3V Maximum holding current ly 1A Maximum gate voltage which will not trigger any device Veo 0.25 V Stored charge lem = 550 A, dir/dt 40 A/us Vm = 50V, 50% chord value Q,, 85 uC Circuit commutated turn-off time =550 A 200V /us to 80% Vory| ta 20-30 ps available down to state 40A/2S, Vay = 50V) 20V/us to 80% Vony| t@ typical 10-25 ps Thermal resistance, junction to heat sink, Double side cooled Ren 0.06C/W for a device with a maximum forward volt Single side cooled trhs) 0.12C/W drop characteristic VOLTAGE CODE HO2 H04 HO6 HO8 H10 H12 Repetitive peak voltages Vaam Voam Non-repetitive peak off-state voltage Vosm 200 400 600 800 1000 1200 Non-repetitive peak reverse blocking voltage | Vasa | 300 500 700 900 1100 1300 Ordering Information (Please quote device code as explained below 11 digits) R 21 6 C oe eo e 0 dv/dt code 10 80% Vorm | y= 3g WoT ON HTC og Fixed Voltage Code C=20V/us E = 100V/us K=20 us L=15 ps type code (see ratings) D=50V/us F = 200V/us N=10 ps Typical code: R216CHO8FJO= 800 Vary 800 Vor 200 V/us dv/dt to 80% Vorm 25 us turn-off 9000-3989 Other values of dv/dt up to 1000 V/us, and turn-off time may be available. iWESTCODE SEMICONDUCTORS (a) (b) (c) (d) (e) (a) 3qE Db INTRODUCTION The R216C thyristor series incorporates diffused silicon slices 30 mm diameter in cold-weld housings. Fast turn-on is achieved by interdigitation of the cathode, enabling these devices to withstand high di/dt and give low turn-on loss in chopper and inverter operation. NOTES ON THE RATINGS Rate of rise of on-state current The maximum un-primed rate of rise of on-state current must not exceed 1000 A/ys at any time during turn-on on a non-repetitive basis. For repetitive performance the on-state rate of rise of current must not exceed 500 A/ys at any time during turn-on. Note that these values of current rate of rise apply to the circuit external to the device and its specified snubber network and device current rates of rise will be higher. (b) Square wave ratings These ratings are given for leading edge linear rates of rise of forward current of 100 and 500 A/ys. Duty Cycle Lines The 100% duty cycle line appears on all these ratings. These frequency ratings are presented in the form that all duty cycles may be represented by straight parallel lines. Maximum operating Frequency The maximum operating frequency, fax, is set by the time required for the thyristor to turn off (tq) and for the off-state voltage to reach full value (tv), i.e. 1 5. ~ toulse + tq + tv Energy per pulse characteristics These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by the frequency ratings. Let E, be the Energy per pulse for a given current and pulse width, in joules. Then Way =E, xf. REVERSE RECOVERY LOSS On account of the number of circuit variables affecting reverse recovery voltage, no allowance for reverse recovery loss has been made in these ratings. The following procedure is recommended for use where it is necessary to include reverse recovery loss. Determination by Measurement From waveforms of recovery current obtained 6. from a high frequency shunt (see Note 1) and reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be constructed. Let the area under this waveform be A joules per pulse. A new heat sink temperature can then be evaluated from: max Tsink (new) = Tsink (original) -A (se +RinX (a) where r,= 1.23 x 10-4/t t=duration of reverse recovery loss per pulse in microseconds A= Area under reverse loss waveform per pulse in joules (W.S.) (b) me 9709955 0002390 4 MEWESBT-ASD f=rated frequency at the original heat sink temperature The total dissipation is now given by Witor) = Worigina) + A X f Design Method In circumstances where it is not possible to measure voltage and current conditions, or for design purposes, the additional losses may be estimated from figure 7. A typical R-C snubber network is connected across the thyristor to control the transient reverse voltage waveform. Let E be the value of energy per reverse cycle in joules (figure 7). Let f be the operating frequency in Hz then Tex New = Tsinx Original ER, x f where Tsink New is the required maximum heat sink temperature and Tsix original is the heat sink temperature given with the frequency ratings. GATE DRIVE The recommended gate drive is 20 V, 20 ohms with a short-circuit current rise time of not more than 1 ys. This gate drive must be applied when using the full di/dt capability of the device. THE DV/DT SUPPRESSION NETWORK The effect of a conventional resistor-capacitor snubber of 0.22 F 5 ohms has been included in these ratings and all rating di/dt values apply to the circuit external to the thyristor and its suppression network. Snubber Network Values A series connected C-R filter may be required across the anode to cathode terminals of the thyristor for the purpose of reducing off-state voltage overshoot. The optimum values for C and R depend partly on the circuits connected to the thyristor. For most applications the snubber design values should not exceed a maximum of 0.22 F ora minimum of 5 ohms. Please consult Westcode for values outside these limits. NOTE 1 REVERSE RECOVERY LOSS BY MEASUREMENT This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring the charge care must be taken to ensure that: a.c. coupled devices such as current transformers are not affected by prior passage of high amplitude forward current. The measuring oscilloscope has adequate dynamic range typically 100 screen heights to cope with the initial forward current without overload.WESTCODE SEMICONDUCTORS frequency, KHz 100 10 0.1 0.01 0.01 For Rating at Mounting Force: >530 kgf <530 kof Multiply 1.0 0.8 Frequency by (double side cooled) 0.5 0.4 (single side cooled) Ths = 85C 500 A/ps Square wave 0.1 1 10 pulse width, m.secs Figure 1 Frequency v. pulse width frequency, KHz 100 10 0.1 0.01 0.01 For Rating at Mounting Force: >530 kgf <530 kgf Multiply 1.0 0. Frequency by (double side cooled) 0.5 0.4 (single side cooled) Lettie Pett Ths = 55C 500 A/yus square wave 0.1 1 10 pulse width, m.secs Figure 3 Frequency v. pulse width 100 10 0.1 frequency, KHz 0.01 0.01 pulse width, m.secs 39E D M@ 9709955 0002391 b MBUESB 7-353/ For Rating at Mounting Force: > 530 kgf <530 kgf Multiply 1.0 0.8 Frequency by (double side cooled) 0.5 0.4 (single side cooled) Ths = 85C 100 A/ps square wave 0.1 1 10 Figure 2 Frequency v. pulse width 100 10 0.1 frequency, KHz o Oo = 0.01 For Rating at Mounting Force: > 530 kgf <530 kgf Multiply 1.0 0. Frequency by {double side cooled) 0.5 0.4 (single side cooled) Prien Lor liat Ths = 55C 100 A/ps square wave 0.1 1 10 pulse width, m.secs Figure 4 Frequency v. pulse widthWESTCODE SEMICONDUCTORS SSE D Me 97059955 0002392 & MMUESB 7-25-22 100 100 10 10 @ 0.1 8 0.1 2 3 . Tj = 125C : Tj = 125C 2 500 A/ps 3 100 A/us + square wave = square wave 3 2 0.01 3 0.01 0. 0.1 1 10 0.01 0.1 1 10 pulse width, m.secs pulse width, m.secs Figure 5 Energy/pulse v. pulse Figure 6 Energy/pulse v. pulse width width 0.07 0.06 0.05 0.04 0.03 n & 0.02 5 8 a 5 snubber connected 0.22 nF 50 > peak reverse voltage Vay = 0.67 Varm max. (804 volts) 5 0.01 10 20 30 40 50 100 200 commutating di/dt, A/ys Figure 7 Max. reverse recovery energy loss per pulse at 125C junction temperature and Vr = 804 volts.WESTCODE SEMICONDUCTORS frequency, KHz 100 For Rating at Mounting Force: > 530 kgf <530 kof Multiply Frequency by 1.0 0.8 {double side cooled) 0.5 0.4 (single side cooled) 10 0.1 0.01 0.01 pulse width, m.secs 0.1 LTE !otdi Ths = 85C sine wave Figure 8 Frequency v. pulse width frequency, KHz > 530 kgf <530 kof 1.0 0.8 {double side cooled) 0.5 0. {single side cooled) 100 = For Rating at Mounting Force: Multiply Frequency by 10 1 0.1 0.01 0.01 0.1 puise width, m.secs I Ths = 55C sine wave Figure 10 Frequency v. pulse width YY recovered charge, Q,,, microcoulombs 39E D @@ 9709955 0002393 T MBUESB7-3SA/ 100 10 0.1 Tj = 125C sine wave energy/pulse, joules 0.01 0.01 10 0.1 1 pulse width, m.secs Figure 9 Energy/pulse v. pulse width 300 200 40 20 commutating di/dt, A/ps Figure 11 Maximum recovered charge at 125C junction temperature 100 200 30 40 50Bese = transient thermal impedance, C/W gate voltage, Vg, volts WESTCODE SEMICONDUCTORS _ Qo k.amperes 0.01 0.001 0.001 0.01 time, seconds Figure 12 Junction to heatsink transient thermal impedance total peak half-sine surge current, 0.1 1 10 10 1 39 D mm 9709955 0002394 100 1 L MBUESB Ti25-27/ 107 8 a 10 3 Ss E a 3 106 100.5 5 10 50 100 m.secs cycles at 50 Hz duration of surge Figure 13 Max. non-repetitive surge current at initial junction temperature 125C gate may temporarily lose contro! of conduction angie peak on-state current, amperes 4 pk. max (Ig tr = 1s) Note: This rating must not be interpreted 2 as an intermittent rating Vi 10 2 4 o 2 # 8 gate 2 3 < of all devices lie 6 for details of within Pg max. (pulse) 60W > this area see > 2 4 +figure 15 ~ max. (average) > 8 231 2 2 3S 2 > o 2g c 0 BO 0.1 03 0.5 1 3 5 10 30 = 50 0 100 200 300 400 gate current, Ig, amperes gate current, lg, milliamperes Figure 14 Gate characteristics at Figure 15 Gate triggering 25C junction temperature characteristics. Trigger points of all thyristors lie within the areas shown Gate drive load line must lie outside appropriate Ig/V_ rectangle 10000 @ 3.6x1.9 4.0 (.19) ; . . . (14.078) dimensions in mm (inches) 2-Hotes Mounting force: 530-1000 kgf Weight: 90 grams 1000 Note: Box Clamp mounting Box Clamp No. 101A226B Mounting force: 365 kgf min. Rthi-hs) 0.125C/W compressen 2% (188) HEIGHT @2sA | 0.3(.01) | (.98) | | ; 100 t 12 16 #20 24 #28 #432 36 . on-state voltage, volts 1 | 01) oss . * . . O31. * Figure 16 Limit on-state characteristic 18.1/14.15 ($8) 15(06) (50/56) FOR AMP REC No.60598-1 TO - 200AB In the interest of product improvement, Westcode reserves the right to change specifications at any time without notice. WESTCODE SEMICONDUCTORS LTD P.O. Box 57 Chippenham Wiltshire SN15 1JL England Telephone Chippenham (0249) 654141 Telex 44751 Og HAWKER SIDDELEY Westinghouse Brake and Signal Co. Ltd. Printed by The Pheon Press, Bristal 26585 )