BT151 SERIES biue binder, tab e THYRISTORS eS Glass-passivated thyristors in TO-220AB envelopes, which are particularly suitable in situations creating high fatigue stresses involved in thermal cycling and repeated switching. Applications include temperature control, motor control, regulators in transformerless power supply applications, relay and coil pulsing and power supply crowbar protection circuits. QUICK REFERENCE DATA BT151-500R | 650R | 800R _ Repetitive peak voltages VormM/VRRM max. 500 650 s00 Vv Average on-state current IT(AV) max. 75 A R.M.S. on-state current IT(RMS) max. 12 A Non-repetitive peak on-state current ITSM max. 100 A MECHANICAL DATA Fig.1 TO-220AB. ~~ te Dimensions in mm 13] ~<- nT - 59 mounting - min = base J I ' | (see note) i 4 15,8 \ 1 , max a k | | i LoL 3 Li 9 ' L ' ' 3,5 max 54 not tinned | | somax ' | F 25 1,3-~ 1] min max (2x) k | Net mass: 2g al leoamaxtsn . > log Note: The exposed metal mounting * 542 sa el le 2,4 base is directly connected to the , , ones anode. Accessories supplied on request: see data sheets Mounting instructions and accessories for TO-220 envelopes. = Products approved to CECC 50 011--003 available on request. Mull ard 2 ( March 1984 1BT151 SERIES RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) + Anode to cathode BT151500R Non-repetitive peak voitages (t < 10 ms) Vpsm/VRSM sco. s4V* Repetitive peak voltages (6 < 0.01) VprRM/VRRM soo =(V Crest working voltages Vpowm/VRwM 400 V Continuous voltages Vp/VR max. 400 400 400 V Average on-state current (averaged over any 20 ms period) up to Tmpb = 95 OC It(Av) max. 7.5 A R.M.S. on-state current IT(RMS) max. 12 A Repetitive peak on-state current ITRM max, 65 A Non-repetitive peak on-state current; : t= 10 ms; half sine-wave; Tj = 110 C prior to surge; with reapplied V RWMmax ITSM max. 100 A. I? for fusing (t = 10 ms) I?t max. 50 As Rate of rise of on-state current after triggering with |g = 50 mA to Iq = 20 A; dig/dt = 50 mA/us diy/dt max. 50 A/us Gate to cathode Reverse peak voltage VRGM max. 5 Vv Average power dissipation (averaged over any 20 ms period) PGIAV) max. 0.5 Ww Peak power dissipation PGM max. 5 Ww Temperatures Storage temperature Tstg 40 to +125 C Operating junction temperature Tj max. 110 oc *Although not recommended, higher off-state voltages may be applied without damage, but the thyristor may switch into the on-state. The rate of rise of on-state current should not exceed 15 Alps. 2 March 1984 ( Mullard ~TThyristors BT151 SERIES THERMAL RESISTANCE From junction to mounting base Rthj-mb = 1.3 K/W Transient thermal impedance; t = 1 ms Zthj-mb = 0.2 K/W Influence of mounting method 1. Heatsink mounted with clip (see mounting instructions) Thermal resistance from mounting base to heatsink a. with heatsink compound Rthmb-h = 0.3 K/W b. with heatsink compound and 0.06 mm maximum mica insulator Rthmb-h = 1.4 K/W c. with heatsink compound and 0.1 mm maximum mica insulator (56369) Rthmb-h = 2.2 K/W | d. with heatsink compound and 0.25 mm max, alumina insulator (56367) Rihmb-h = 0.8 K/W e. without heatsink compound Rthmb-h = 1.4 K/W 2. Free-air operation The quoted values of Ry, j-a should be used only when no leads of other dissipating components run to the same tie-point. Thermal resistance from junction to ambient in free air: mounted on a printed-circuit board at a = any lead length and with copper laminate Rth j-a = 60 K/W O45 < 0) CL KE LL3 0813 = Fig. 2. o Mullard | (" 1984 3BT151 SERIES. CHARACTERISTICS Anode to cathode On-state voltage ly = 23 A; Tj = 25 % VT < 1,75 V* Rate of rise of off-state voltage that will not trigger any device; Tj = 110 C; see Fig.10 RGK = Open circuit dVp/dt < 50 V/us Re = 100 2 dVp/dt < 200 V/s Reverse current Vr = VRWMmax: Tj = 110 C Ip < 0,5 mA Off-state current Vb = VpwMmax: Tj = 110C Ip < 05 mA Latching current; T= 25 C Ie < 40 mA Holding current; Tj = 25 C Tey < 20 mA Gate to cathode Voltage that will trigger all devices Vp = 6 V; Tj = 25 OC VoeT > 15 V Vp =6V; Tj =40 9 VGT > 2,3 V Voltage that will not trigger any device Vp = VDRMmax: 1j = 110 C : Vepb < 250 mV Current that will trigger all devices Vp = 6 V; Tj = 25 OC IGT > 15 mA Vp = 6 V; Tj = 40 C IGT > 20 mA Switching characteristics Gate-controlled turn-on time (tg = tq + ty) when switched from Vp = Vp RMmax to It = 40 A; IGT = 100 mA; dig/dt = 5A/us; Tj = 25 9C tgt typ. 2 ws f I; ' 90% i 10 oe, jetgel t, Jo m4 Tor M1365 Fig.2a Gate controlled turn-on time definition. Measured under pulse conditions to avoid excessive dissipation. 4 March 1984 | ( Mullard 2Thyristors , BT151 SERIES MOUNTING INSTRUCTIONS 1. The device may be soldered directly into the circuit, but the maximum permissible temperature of the soldering iron or bath is 275 C; it must not be in contact with the joint for more than 5 seconds. Soldered joints must be at least 4,7 mm from the seal. 2. The leads should not be bent less than 2,4 mm from the seal, and should be supported during bending. 3. It is recommended that the circuit connection be made to the anode tag, rather than direct to the heatsink. 4. Mounting by means of a spring clip is the best mounting method because it offers: a. a good thermal contact under the crystal area and slightly lower Reh mb-h Values than screw mounting. b. safe isolation for mains operation. However, if a screw is used, it should be M3 cross-recess pan-head. Care should be taken to avoid damage to the plastic body. 5. For good thermal contact heatsink compound should be used between mounting base and heatsink. Values of Rih mb-h given for mounting with heatsink compound refer to the use of a metallic-oxide loaded compound. Ordinary silicone grease is not recommended. 6. Rivet mounting (only possible for non-insulated mounting) Devices may be rivetted to flat heatsinks; such a process must neither deform the mounting tab, nor enlarge the mounting hole. OPERATING NOTES Dissipation and heatsink considerations: a. The various components of junction temperature rise above ambient are illustrated in Fig. 3. junction Rtn j-mb mounting base Rtn mb-h [I heatsink Rthh-a Fig. 3. pean ambient b. The method of using Fig. 4 is as follows: Starting with the required current on the I7(qv) axis, trace upwards to meet the appropriate form factor curve. Trace right horizontally and upwards from the appropriate value on the Tampb scale. The intersection determines the Rin mb-a- The heatsink thermal resistance value (Ry, p-a) can now be calculated from: Rthh-a = Rth mb-a ~ Reh mb-h- c. Any measurement of heatsink temperature should be made immediately adjacent to the device. ws Mullard , ( 1984 5BT151 SERIES D8560 15 90 P co 10 97 5 103.5 free air 0: 110 0 5 ttyayy(A) 10]0 50) Tamp(C) 100 , 125 Fig.4 The right-hand part shows the interrelationship between the power (derived from the left-hand part) and the maximum permissible temperatures. a = conduction angle per half cycle IT(RMS} IT(AV) a = form factor = March 1984 ( Mullard oBT151 SERIES Thyristors M1412 150 '7S(RMS) (A) 100 50 10-3 1072 10-1 1 duration (s) 10 Fig.5 Maximum permissible non-repetitive r.m.s. on-state current based on sinusoidal currents {f = 50 Hz); Tj = 110 C prior to surge; with reapplied V RWMmax- NW Artcoo --- !tsm ~ ITS(RMS) time Cc Mullard March 1984 ~BT151 SERIES. M1411 VET (Vv) 0 50 0 50 100 150 Tj (c) Fig.6 Minimum gate voltage that will trigger all devices as a function of junction temperature. 30 T)= 25C T,=110C ly (A) typ VT 20 10 0 0,5 M1410 30 ler (mA) 20 10 0 50 0 50 100 150 Tj (c) Fig.7 Minimum gate current that will trigger all devices as a function of junction temperature. M1409 Fig.8. Vr (Vv) 25 March 1984. Mullard cBT151 SERIES Thyristors M1413 10 Zthj-mb (K/W) 1 1071 1072 41073 F 10-5 1074 1073. 10-2 10~ 1 time(s) 10 Fig.9 dVp dt (V/us) 103 _ RgK=1002 RgeK=open circuit 102 10 Fig.10 Maximum rate of rise of off-state voltage that will not trigger any device (exponential method) as a function of junction temperature. M84-1228/RE Mullard | ( March 1984 0 50 100 TeC) 150