Si3801DV
Vishay Siliconix
Document Number: 70834
S-59628—Rev. A, 09-Nov-98 www.vishay.com FaxBack 408-970-5600
2-1
Bi-Directional P-Channel MOSFET/Battery Switch
VSS (V) rSS(on) () IS (A)
–12
0.220 @ VGS = –4.5 V 2.3
–
12
0.400 @ VGS = –2.5 V 1.7
Low rSS(on) Symmetrical P-Channel MOSFET
Rated for 2.5- to 12-V Operation
Symmetrical 12-V Blocking (off) Voltage
Solution for High-Side Battery Disconnect Switching (BDS)
Supports Multiple Battery Applications
Low Profile, Small Footprint TSOP-6 Package
The Si3801DV is a low on-resistance p-channel power
MOSFET providing 12-V bi-directional blocking and
low-resistance bi-directional conduction. The Si3801DV was
realized by integrating two rugged, p-channel, high density
Trench process, vertical MOSFETs in a common drain area.
This yields exactly the same “reverse blocking” results as
externally connecting the drains of a dual MOSFET, but
without the wasted separation between two die and the area
lost to drain connections that can be avoided by connecting
them internally. Additional space is saved by tying the two
gates common. This allows the Si3801DV to replace a larger
dual MOSFET package with a single smaller footprint, lower
profile, TSOP-6 package.
FIGURE 5. Charger Demultiplexing
Loads
Charger
AC/DC
Adapter
Si3801DV
Si3801DV
FIGURE 6. Battery Multiplexing (High-Side Switch)
Charger
DC/DC
Si3801DV
Si3801DV
Si3801DV
Vishay Siliconix
www.vishay.com S FaxBack 408-970-5600
2-2 Document Number: 70834
S-59628—Rev. A, 09-Nov-98
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURAITON
FIGURE 7. FIGURE 8.
TSOP-6
Top View
6
4
1
2
3
5
2.75 mm
3 mm
S1
(1, 6) S2
(3, 4)
G
(2, 5)
ABSOLUTE MAXIMUM RATINGS (TA = 25_ UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Source-Source Voltage VSS –12
V
Gate-Source V oltage VGS "12
V
Continuous Current (TJ
=
150
_
C)
a,
bTA = 25_C
IS
"2.3
A
Continuous
Current
(T
J =
150_C)a
,
b
TA = 70_C
I
S
"1.9 A
Pulsed Drain Current ISM "10
Maximum Power Dissipation
a,
bTA = 25_C
PD
2.0
W
Maximum
Power
Dissipationa
,
b
TA = 70_C
P
D1.3
W
Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambientat v 5 seconds RthJA 62.5
_C/W
M
ax
i
mum
J
unc
ti
on-
t
o-
A
m
bi
en
ta
Steady State
R
thJA 106 _
C/W
Notes
a. Surface Mounted on FR4 Board.
b. t v 5 seconds.
Si3801DV
Vishay Siliconix
Document Number: 70834
S-59628—Rev. A, 09-Nov-98 www.vishay.com S FaxBack 408-970-5600
2-3
SPECIFICATIONS (TJ=25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VSS = VGS, ID = –250 mA –0.6 V
Gate-Body Leakage IGSS VSS = 0 V, VGS = "12 V "100 nA
Zero Gate Voltage Source Current
ISSS
VSS = –12 V, VGS = 0 V –1
mA
Zero
Gate
Voltage
Source
Current
I
SSS VSS = –12 V, VGS = 0 V, TJ = 70_C–5 m
A
On-State Source CurrentaIS(on) VSS = –5 V, VGS = –4.5 V –10 A
Source
-
Source On
-
State Resistance
a
rSS(on)
VGS = –4.5 V, IS = –2.3 A 0.175 0.220
W
S
ource-
S
ource
O
n-
St
a
t
e
R
es
i
s
t
ance
a
rSS(on) VGS = –2.5 V, IS = –1.0 A 0.330 0.400
W
Forward T ransconductance agfs VSS = –10 V, IS = –2.3 A 8 S
Dynamicb
Total Gate Charge Qg23 40
C
Miller Charge QMiller VSS = –10 V, VGS = –4.5 V, IS = –2.3 A 12 nC
Gate-Source Charge Qgs 4.5
T urn-On Delay Time td(on) 50 100
Rise T ime trVSS = –10 V, RL = 10 W80 160
ns
T urn-Off Delay T ime td(off)
SS ,L
IS^ –1.0 A, VGEN = –4.5 V, RG = 6 W45 90
ns
Fall T ime tf95 190
Notes
a. Pulse test; pulse width v300 ms, duty cycle v2%.
b. Guaranteed by design, not subject to production testing.
Si3801DV
Vishay Siliconix
www.vishay.com S FaxBack 408-970-5600
2-4 Document Number: 70834
S-59628—Rev. A, 09-Nov-98
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
–50 –25 0 25 50 75 100 125 150
On-Resistance vs. Junction Temperature
VGS = 4.5 V
IS = 2.3 A
TJ – Junction Temperature (_C)
– Source Current (A)I S
0
2
4
6
8
10
012345
0
0.1
0.2
0.3
0.4
0.5
0.6
012345
0
0.1
0.2
0.3
0.4
0.5
0.6
0246810
Output Characteristics T ransfer Characteristics
On-Resistance vs. Source Current
– Source Current (A)I S
IS – Source Current (A)
On-Resistance vs. Gate-Source Voltage
VGS = 5 thru 3.5 V
2 V
2.5 V
3 V
TC = 125_C
25_C–55_C
VGS = 4.5 V
VGS = 2.5 V
0
0.9
1.8
2.7
3.6
4.5
0 6 12 18 24
Gate Charge
– Gate-to-Source Voltage (V)
Qg – Total Gate Charge (nC)
VGS
VSS = 10 V
IS = 2.3 A
VGS – Gate-to-Source Voltage (V)
IS = 2.3 A
IS = 1.0 A
– On-Resistance (rSS(on) )
– On-Resistance (rSS(on) )
(Normalized)
– On-Resistance rSS(on)
Si3801DV
Vishay Siliconix
Document Number: 70834
S-59628—Rev. A, 09-Nov-98 www.vishay.com S FaxBack 408-970-5600
2-5
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
–0.15
–0.03
0.09
0.21
0.33
0.45
–50 –25 0 25 50 75 100 125 150
Threshold Voltage
TJ – Temperature (_C)
IS = 250 mA
Variance (V)VGS(th)
Single Pulse Power
0.01
01
10
25
5
10 6000.1
15
20
100
Time (sec)
Power (W)
10–3 10–2 1 10 60010–1
10–4 100
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
0.1
0.01
Normalized Effective T ransient
Thermal Impedance
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 106_C/W
3. TJM – TA = PDMZthJA(t)
t1
t2
t1t2
Notes:
4. Surface Mounted
PDM
Square W ave Pulse Dureation (sec)
Legal Disclaimer Notice
Vishay
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Legal Disclaimer Notice
Vishay
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
