VOIDLESS-HERMETICALLY-SEALED
STANDARD RECOVERY GLASS
RE
C
TIFIER
S
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
Copyright © 2007
1-15-2007 REV C
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N5614 thru 1N5622
1N5614 – 1N5622
DESCRIPTION APPEARANCE
This “standard recovery” rectifier diode series is military qualified to MIL-PRF-
19500/427 and is ideal for high-reliability applications where a failure cannot be
tolerated. These industry-recognized 1.0 Amp rated rectifiers for working peak
reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-
glass construction using an internal “Category I” metallurgical bond. These
devices are also available in surface mount MELF package configurations by
adding a “US” suffix (see separate data sheet for 1N5614US thru 1N5622US).
Microsemi also offers numerous other rectifi er pro ducts to meet higher and lower
current ratings with various recovery time speed requir ements including fast and
ultrafast device types in both throu gh-hole and surface mount packages.
“A” Package
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES APPLIC ATIONS / BENEFITS
• Popular JEDEC registered 1N5614 to 1N5622 series
• Voidless hermetically s ealed glass package
• Triple-Layer Passivation
• Internal “Category I” Metallurgical bonds
• Working Peak Reverse Voltage 200 to 1000 Volts.
• JAN, JANTX, JANTXV, and JANS available per MIL-
PRF-19500/427
• Surface mount equivalents also avai lable in a square
end-cap MELF configuration with “US” suffix (see
separate data sheet for 1N5614US thru 1 N5622US)
• Standard recovery 1 Amp rectifiers 200 to 1000 V
• Military and other high-reliability applications
• General rectifier applications inclu din g bridges, half-
bridges, catch diodes, etc.
• High forward surge current capability
• Extremely robust construction
• Low thermal resistance
• Controlled avalanche with peak reverse power
capability
• Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RAT ING S MECHANICAL AND PACKAGING
• Junction & Storage Temperature: -65oC to +200oC
• Thermal Resistance: 38oC/W junction to lead at 3/8
inch (10 mm) lead length from body
• Thermal Impedance: 4.5oC/W @ 10 ms heating time
• Average Rectified For ward Current (IO): 1.0 Amps @
TA = 55ºC and 0.75 Amps @ TA = 100ºC
• Forward Surge Current: 30 Amps @ 8.3 ms half-sine
• Solder Temperatures: 260ºC for 10 s (maximum)
• CASE: Hermetically sealed voidless hard glass with
Tungsten slugs (package dimensions on last page)
• TERMINATIONS: Axial leads are copper with
Tin/Lead (Sn/Pb) finish. Note: Previous JANS
inventory had solid Silver axial-leads an d no finish.
• MARKING: Body paint and part number, etc.
• POLARITY: Cathode band
• TAPE & REEL option: Standard per EIA-296
• WEIGHT: 340 mg
ELECTRICAL CHARACTERISTICS
TYPE
WORKING
PEAK
REVERSE
VOLTAGE VRWM
MINIMUM
BREAKDOWN
VOLTAGE
VBR @ 50μA
AVERAGE
RECTIFIED
CURRENT
IO @ TA
(NOTE 1)
FORWARD
VOLTAGE
(MAX.)
VF @ 3A
REVERSE
CURRENT
(MAX.)
IR @ VRWM
MAXIMUM
SURGE
CURRENT
IFSM
(NOTE 2)
REVERSE
RECOVERY
(NOTE 3)
trr
VOLTS VOLTS AMPS VOLTS
μA AMPS μs
55oC 100oC 25oC 100oC
1N5614
1N5616
1N5618
1N5620
1N5622
200
400
600
800
1000
220
440
660
880
1100
1.00
1.00
1.00
1.00
1.00
.750
.750
.750
.750
.750
0.8 MIN.
1.3 MAX.
0.5
0.5
0.5
0.5
0.5
25
25
25
25
25
30
30
30
30
30
2.0
2.0
2.0
2.0
2.0
NOTE 1: From 1 Amp at TA = 55oC, derate linearly at 5.56 mA/ oC to 0.75 Amp at TA = 100oC. From TA = 100oC,
derate linearly at 7.5 mA/oC to 0 Amps at TA = 200 oC. These ambient ratings are for PC boards where thermal
resistance from mounting point to ambient is sufficiently controll ed where TJ(max) does not exceed 175 oC.
NOTE 2: TA = 100oC, f = 60 Hz, IO = 750 mA for ten 8.3 ms surges @ 1 minute intervals
NOTE 3: IF = 0.5A, IRM = 1A, IR(REC) = 0.250A
VOIDLESS-HERMETICALLY-SEALED
STANDARD RECOVERY GLASS
RECTIFIERS
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N5614 thru 1N5622
1N5614 – 1N5622
SYMBOLS & DEFINITI ONS
Symbol Definition
VBR Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current
VRWM Working Peak Reverse Voltage: The maximum peak vo ltage that can be applied over the operating
temperature range
IOAverage Rectified Output Current: Output Current averaged over a full cycle with a 50 hZ or 60 Hz sine-wave
input and a 180 degree conduction angle
VFMaximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current
IRMaximum Leakage Current: The maximum leakage current that will flow at the specified voltage and
temperature
C Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage
trr
Reverse Recovery Time: The time interval between the instant the current passes through zero when
changing from the forward direction to the reverse direction and a specified decay point after a peak reverse
current occurs.
GRAPHS
FIGURE 1 FIGURE 2
TYPICAL FORWARD VOLTAGE v s FO RWARD CURRENT TYPICAL REVERSE CURRENT vs PIV
Microsemi
Scottsdale Division Page 2
Copyright © 2007
1-15-2007 REV C 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
VOIDLESS-HERMETICALLY-SEALED
STANDARD RECOVERY GLASS
RECTIFIERS
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N5614 thru 1N5622
1N5614 – 1N5622
FIGURE 3 FIGURE 4
MAXIMUM POWER DISSIPATION MAXIMUM CURRENT vs LEAD TEMPERATURE
vs LEAD TEMPERATURE
PACKAGE DIMEN SIONS
Dimensions: Inches/[mm]
NOTE: Lead tolerance = +0.003/-0.004 inches
Microsemi
Scottsdale Division Page 3
Copyright © 2007
1-15-2007 REV C 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
