V
RRM
= 20 V - 100 V
I
F
= 200 A
Features
• High Surge Capability
Twin Tow
er Package
• Ty
pes up to 100 V V
RR
M
Parameter
Sy
mbol
MBR20020CT (R)
MBR20030CT (R)
Unit
Repetitive peak reverse
V
20
30
V
Silicon Pow
er
Schottk
y
Diode
MBR20020CT thru MBR20040CT
R
MBR20040CT (R)
35
MBR20035CT (R)
Maximu
m ratings, at T
j
= 25 °C, unless oth
erwise specif
ied ("R" devices hav
e leads reversed
)
Conditions
40
voltage
V
RRM
20
30
V
RMS rev
erse voltage
V
RMS
14
21
V
DC blocking voltage
V
DC
20
30
V
Continuous forward
current
I
F
200
200
A
Operating temperature
T
j
-40 to 175
-40 to 175
°C
Storage temperature
T
stg
-40 to 175
-40 to 175
°C
Parameter
Sy
mbol
MBR20020CT (R
)
MBR20030CT (R)
Unit
Diode forward v
oltage
0.65
0.65
55
200
200
Thermal ch
aracteristics
Thermal resistance,
junction - case
R
thJC
0.5
0.5
°C/W
Electrical characteristics, at
Tj = 25 °C, unl
ess otherw
ise specified
Surge non-repetitive
forward current, Half
Sine W
ave
I
F,SM
Reverse current
I
R
V
F
200
A
1500
V
R
= 20 V, T
j
= 25 °C
I
F
= 100 A, T
j
= 25 °C
T
C
≤
136 °C
Conditions
35
25
1500
1500
-40 to 175
200
200
1500
-40 to 175
MBR20040CT (R)
55
MBR20035CT (R)
0.5
V
R
= 20 V, T
j
= 125 °C
0.5
0.65
0.65
200
mA
V
-40 to 175
-40 to 175
T
C
= 25 °C, t
p
= 8.3 m
s
40
28
40
35
www.genesicsemi.com
1
MBR20020CT thru MBR20040CT
R
www.genesicsemi.com
2
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