KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA BC849/850 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . FEATURES DIM | _ MILLIMETERS * For Complementary With PNP Type BC859/860. 7 canoa0/ 016 D 46.0 15/_008 E 2.40+0.30/-0.20 MAXIMUM RATINGS (Ta=25C) ; io CHARACTERISTIC SYMBOL | RATING | UNIT cL a0 = oad Collector-Base BC849 Vewo 30 Vv a. P i oa an Voltage BC850 50 . | | | Loenigor te Collector-Emitter}] BC849 Vexo 30 Vv ES Nes Voltage BC850 45 Emitter-Base Voltage VERO 3 Vv 1. EMITTER Collector Current Ic 100 mA 2. BASE Collector Power Dissipation Pe * 350 mW Commenee Junction Temperature Tj 150 Cc Storage Temperature Range Tig -55 ~ 150 SOT23 Pc* : Package Mounted On 99.5% Alumina 108 0.6mm. ELECTRICAL CHARACTERISTICS (Ta=25C ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT 5 -Emi BC849 30 - - Dreakdown Voltage [caso] Wisexe | Fet0mA, io a 5 - BC849 30 - - Preaklewn Voltage BC850 Veariceo Te=1OHA, In-0 50 - - V Emitter-Base Breakdown Voltage V @RIERO Tn=10uA, Ic=0 5 - - Vv Collector Cut-off Current Tcno Vcn=30V, I[n=0 - - 15 nA DC Current Gain hrr(Note) | Ic=2mA, Vecr=5V 200 - 800 Base-Emitter Voltage Varon) 1 | Ie=2mA, Vcr=5V 0.58 0.66 0.7 y Varon) 2 | Ic=lOmA, Vcr=5V - - 0.77 Collector-Emitter Vera) 1 | Ic=lOmA, In=0.5mA - 0.09 0.25 y Saturation Voltage Versa) 2 | Ic=l00mA, In=S5mA - 0.2 0.6 Base-Emitter Vorisa) 1 | Ic=lOmA, In=0.5mA - 0.7 - y Saturation Voltage Vera) 2 | Ic=l00mA, In=5mA - 0.9 - Transition Frequency fr Tc=l0OmA, Vcr=5V, f=l00MHz - 300 - MHz Collector Output Capacitance Cop Vcn=l0V, In=0, f=1MHz - 2.5 45 pF BC849 = a5 - - 4.0 Noise Figure BCS50 NF Ie OL, en io dB Note : hre Classification B:200~450, C:420 ~ 800 Marking MARK SPEC Fy Lot No. TYPE BC849B BC849C BC850B BC850C ; MARK 2B aC OF 2G type Name | _ 4 Cl 1998. 6. 15 Revision No : 2 KEC