A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1
Specif i cations are subjec t to change without notice.
CHARACTERISTICS TA = 25 °C
NONE
SYMBOL TEST CONDITIONS MINI MUM TYPICAL MAXIMUM UNITS
BVCEO IC = 5.0 mA 20 V
BVCBO IC = 1.0 mA 40 V
BVEBO IE = 100 µA 3.5 V
ICBO VCB = 10 V 50 µ
µµ
µA
hFE VCE = 5.0 V IC = 50 mA 70 300 ---
VCE(SAT) IC = 50 mA IB = 5.0 mA 500 mV
ft VCE = 14 V IC = 90 mA f = 300 MHz 3.0 GHz
Ccb VCB = 10 V f = 1.0 MHz 1.6 pF
NF VCE = 8.0 V IC = 50 mA f = 300 MHz 2.5 dB
GUmax VCE = 14 V IC = 90 mA f = 300 MHz 15 dB
NPN SILICON HIGH FREQUENCY TRANSISTOR
LT1001A
DESCRIPTION:
The ASILT1001A is a High
Frequency Tr ansist or Designed for
High Gain Low Noise CATV, and
MATV Amplifier Applications.
MAXIMUM RATINGS
IC 200 mA
VCE 20 V
PDISS 2.5 W @ TC = 50 OC
TJ -65 °C to +200 °C
TSTG -65 °C to +200 °C
θ
θθ
θJC 70 °C/W
PACKAGE STYLE TO-39
Ø A
Ø D
45° CB
F
E
GH
MINIMUM
inches / mm
.029 / 0.740
.335 / 8.510
.200 / 5.080
.028 / 0.720
.305 / 7.750
.240 / 6.100
B
C
D
E
F
G
A
MAXIMUM
.034 / 0.860
.335 / 8.500
.260 / 6.600
.370 / 9.370
inches / mm
.045 / 1.140
.500 / 12.700
H.016 / 0.407 .020 / 0.508
DIM
1 = EMITTER 2 = BASE
3 = COLLECTOR
(
CASE
)
