2SK973(L), 2SK973(S) Silicon N-Channel MOS FET November 1996 Application High speed power switching Features * * * * Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source * Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline DPAK-1 4 4 1 1 2 3 2 3 D 1. Gate 2. Drain 3. Source 4. Drain G S 2SK973(L), 2SK973(S) Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS 20 V Drain current ID 2 A 8 A 2 A 10 W Drain peak current ID(peak)* Body to drain diode reverse drain current IDR 2 1 Channel dissipation Pch* Channel temperature Tch 150 C Storage temperature Tstg -55 to +150 C Notes 1. PW 10 s, duty cycle 1% 2. Value at TC = 25C 2 2SK973(L), 2SK973(S) Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V(BR)DSS 60 -- -- V ID = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS 20 -- -- V IG = 100 A, VDS = 0 Gate to source leak current IGSS -- -- 10 A VGS = 16 V, VDS = 0 Zero gate voltage drain current IDSS -- -- 100 A VDS = 50 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.0 -- 2.0 V ID = 1 mA, VDS = 10 V Static drain to source on state resistance RDS(on) -- 0.25 0.35 ID = 1 A, VGS = 10 V * 0.40 0.50 ID = 1 A, VGS = 4 V * 1 Forward transfer admittance |yfs| 1.2 2.0 -- S ID = 1 A, VDS = 10 V * Input capacitance Ciss -- 240 -- pF VDS = 10 V, VGS = 0, f = 1 MHz Output capacitance Coss -- 115 -- pF Reverse transfer capacitance Crss -- 35 -- pF Turn-on delay time td(on) -- 4 -- ns Rise time tr -- 15 -- ns Turn-off delay time td(off) -- 80 -- ns Fall time tf -- 40 -- ns Body to drain diode forward voltage VDF -- 1.0 -- V IF = 2 A, VGS = 0 Body to drain diode reverse recovery time trr -- 70 -- ns IF = 2 A, VGS = 0, diF/dt = 50 A/s Note 1 1 ID = 1 A, VGS = 10 V, RL = 30 1. Pulse test 3 2SK973(L), 2SK973(S) Maximum Safe Operation Area Power vs. Temperature Derating 50 30 100 (T Sh ot = ) 25 C ) -25C 4 Drain Current ID (A) Drain Current ID (A) 1 on Typical Transfer Characteristics 3 3V 1 m s( ati 5 3.5 V 2 10 0.3 1.0 3 10 30 100 Drain to Source Voltage VDS (V) Pulse Test 5V 4V 4 er Ta = 25C Typical Output Characteristics 10 V = C Case Temperature TC (C) 5 Op 0.3 0.05 0.1 150 PW DC s m 50 10 s 1 ) t on in DS ( 3 n io y R t a er d b 1.0 Op ite lim 0.1 0 is ar s 5 s hi 0 Drain Current ID (A) 10 ea 10 10 Channel Dissipation Pch (W) 15 75C VDS = 10 V Pulse Test TC= 25C 3 2 1 2.5 V VGS = 2 V 0 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Static Drain to Source on State Resistance vs. Drain Current Drain to Source Saturation Voltage VDS (on) (V) Pulse Test 1.6 5A 1.2 0.8 2A 0.4 ID = 1 A 0 2 4 6 8 10 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance RDS (on) () Drain to Source Saturation Voltage vs. Gate to Source Voltage 2.0 5 Pulse Test 2 0.5 10 V 0.2 0.1 0.05 0.2 Forward Transfer Admittance yfs (S) Static Drain to Source on State Resistance RDS (on) () 4 0.8 ID = 2 A VGS = 4 V 1A 0.4 5A 0.2 0 -40 VGS = 10 V 1 A, 2 A 0 40 80 120 Case Temperature TC (C) 0.5 1.0 2 5 10 Drain Current ID (A) 20 Forward Transfer Admittance vs. Drain Current Pulse Test 0.6 VGS = 4 V 1.0 Static Drain to Source on State Resistance vs. Temperature 1.0 1 2 3 4 Gate to Source Voltage VGS (V) 160 10 5 VDS = 10 V -25C Pulse Test TC = 25C 2 75C 1.0 0.5 0.2 0.1 0.05 0.1 0.2 2 0.5 1.0 Drain Current ID (A) 5 5 2SK973(L), 2SK973(S) Body to Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 1000 200 di/dt = 50 A/s, Ta = 25C VGS = 0 Pulse Test Capacitance C (pF) Reverse Recovery Time trr (ns) 500 100 50 20 10 5 0.2 VGS = 0 f = 1 MHz 300 Ciss 100 Coss 30 Crss 10 3 1 0.5 1.0 2 5 10 Reverse Drain Current IDR (A) 0 20 10 20 50 30 40 Drain to Source Voltage VDS (V) Switching Characteristics 16 VDD = 50 V 25 V 60 12 10 V VDS 40 VDD = 50 V 20 0 25 V 10 V 2 8 VGS ID = 2 A 4 6 8 Gate Charge Qg (nc) 4 10 td (off) 50 Switching Time t (ns) 80 100 Gate to Source Voltage VGS (V) 20 tf 20 tr 10 5 td (on) 2 VGS = 10 V VDD = 30 V PW = 2s, duty < 1 % 1 0.05 * * 0.1 0.5 1.0 0.2 2 Drain Current ID (A) 5 Reverse Drain Current vs. Source to Drain Voltage 5 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics 100 4 3 Pulse Test 10 V 15 V 2 5V 1 0 VGS = 0, -5 V 0.8 0.4 1.2 2.0 1.6 Source to Drain Voltage VSD (V) 5 Normalized Transient Thermal Impedance S (t) 2SK973(L), 2SK973(S) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25C D=1 1.0 0.5 0.3 0.2 0.1 0.05 0.02 ch-c(t) = S (t) * ch-c ch-c = 12.5C/W, TC = 25C PDM 0.1 lse 0.01 ot Pu h 1S 0.03 0.01 10 T 100 1m 10 m Pulse Width PW (s) D = PW T PW 100 m 1 10 Switching Time Test Circuit Wavewforms Vin Monitor 90 % Vout Monitor D.U.T RL Vin Vout 10 % 10 % 10 % 50 Vin = 10 V 6 . 30 V VDD = . td (on) 90 % tr 90 % td (off) tf 2SK973(L), 2SK973(S) Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 7