The 1N7038U3 Schottky rectifier has been expressly
designed to meet the rigorous requirements of high
reliability environments. It is packaged in the hermetic
surface mount SMD-0.5 ceramic package. The device's
forward voltage drop and reverse leakage current are
optimized for the lowest power loss and the highest circuit
efficiency for typical high frequency switching power
supplies and resonant power converters. Full MIL-PRF-
19500 quality conformance testing is available on source
control drawings to TX, TXV and S quality levels.
• Hermetically Sealed
• Low Forward Voltage Drop
• High Frequency Operation
• Guard Ring for Enhanced Ruggedness and Long term
Reliability
• Surface Mount
• Lightweight
Major Ratings and Characteristics Description/Features
10/03/12
CASE STYLE
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Characteristics 1N7038U3 Units
IF(AV) 30 A
VRRM 150 V
IFSM @ tp = 8.3ms half-sine 140 A
V
F
@ 30Apk, TJ =125°C 0.92 V
TJ,Tstg Operating and storage -65 to 150 °C
SCHOTTKY RECTIFIER
30Amp, 150V
30LJQ150
JANS1N7038U3
JANTX1N7038U3
JANTXV1N7038U3
HIGH EFFICIENCY SERIES
Ref: MIL-PRF-19500/731
Case Outline and Dimensions - SMD-0.5
CATHODE ANODE ANODE
( ISOLATED BASE )
• ESD Rating: Class 1B per MIL-STD-750, Method 1020
PD-94063C
30LJQ150, 1N7038U3
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Voltage Ratings
Parameters Limits Units Conditions
IF(AV) Max. Average Forward Current 30 A 50% duty cycle @ TC = 83°C, square waveform
See Fig. 5
IFSM Max. Peak One Cycle Non - Repetitive 140 A @ tp = 8.3ms half-sine
Surge Current
Absolute Maximum Ratings
Parameters Limits Units Conditions
VFM Max. Forward Voltage Drop 1.07 V @15A TJ = -55°C
See Fig. 11.26 V @30A
0.96 V @15A TJ = 25°C
1.18 V @30A
0.75 V @15A TJ = 125°C
0.92 V @30A
IRM Max. Reverse Leakage Current 0.12 mA TJ
= 25°C VR = rated VR
See Fig. 26.0 mA TJ = 125°C
CTMax. Junction Capacitance 340 pF VR = 5VDC (1MHz, 25°C)
LSTypical Series Inductance 4.8 nH Measured from center of cathode pad to center of
anode pad
Electrical Specifications
Thermal-Mechanical Specifications
Part number 1N7038U3
VRMax. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V) 150
Pulse Width < 300µs, Duty Cycle < 2%
Pins 2 and 3 externally tied together
Parameters Limits Units Conditions
TJMax.Junction Temperature Range -65 to 150 °C
Tstg Max. Storage Temperature Range -65 to 150 °C
RthJC Max. Thermal Resistance, Junction 1.82 °C/W DC operation See Fig. 4
to Case
wt Weight (Typical) 1.0 g
Die Size (Typical) 125X125 mils
Case Style SMD-0.5
30LJQ150, 1N7038U3
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Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage
Fig. 3 - Typical Junction Capacitance Vs.
Reverse Voltage
Fig. 1 - Max. Forward Voltage Drop Characteristics
020 40 60 80 100 120 140 160
Reverse Voltage -V R (V)
10
100
1000
Junction Capacitance - CT (pF)
TJ = 25°C
020 40 60 80 100 120 140 160
Reverse Voltage - VR (V)
0.0001
0.001
0.01
0.1
1
10
Reverse Current - IR ( mA )
125°C
75°C
25°C
100°C
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Forward Voltage Drop - V F (V)
1
10
100
Instantaneous Forward Current - IF (A)
Tj = -55°C
Tj = 125°C
Tj = 25°C
30LJQ150, 1N7038U3
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Fig. 5 - Max. Allowable Case Temperature Vs.
Average Forward Current
Fig. 4 - Max. Thermal Impedance ZthJC Characteristics
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 10/2012
1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.1
1
10
Thermal Response (Z thJC)
D = 0.4
D = 0.5
D = 0.2
D = 0.1
D = 0.3
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0 5 10 15 20 25 30 35
Average Forward Current - I F(AV) (A)
0
20
40
60
80
100
120
140
160
Allowable Case Temperature - (°C)
RthJC (DC) = 1.82°C/W
80 % Square Wave (D=0.50)
Rated VR applied
DC
