Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2N6727 TRANSISTOR (PNP) TO-92 FEATURES 1. EMITTER Power dissipation PCM : 1 2. BASE W(Tamb=25) 3. COLLECTOR Collector current ICM : -1.5 A Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= -1 mA, IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC= -10 mA , IB=0 -40 V Emitter-base breakdown voltage V(BR)EBO IE= -1 mA, IC=0 -5 V Collector cut-off current ICBO VCB= -50 V, IE=0 -0.1 A Collector cut-off current ICEO VCB= -40 V, IB=0 -1 A Emitter cut-off current IEBO VEB= -5 V, IC=0 -0.1 A HFE(1) VCE=-1 V, IC= -1 A 50 HFE(2) VCE=-1 V, IC= -10 mA 55 HFE(3) VCE=-1 V, IC= -100 mA 60 Collector-emitter saturation voltage VCE(sat) IC= -1 A, IB= -100 mA -0.5 V Base-emitter VBE(on) VCE= -1 V, IC= -1 A -1.2 V fT VCE=-10 V , IC= -50 mA DC current gain voltage Transition frequency 50 250 MHz