2N6727 - Transys Electronics - Datasheet.Directory

TO-92 Plastic-Encapsulated Transistors

2N6727 TRANSISTOR (PNP)

FEATURES

Power dissipation

PCM : 1 W(Tamb=25℃)

Collector current

ICM : -1.5 A

Collector-base voltage

V(BR)CBO : -50 V

Operating and storage junction temperature range

TJ, T stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown vol tage V(BR)CBO Ic= -1 mA, IE=0 -50 V

Collector-emitter breakdown voltage V(BR)CEO I

C= -10 mA , IB=0 -40 V

E mitter-b ase break dow n vol t age V(BR)EBO I

E= -1 mA, IC=0 -5 V

Collector cut-off current ICBO V

CB= - 50 V, IE=0 -0.1

µA

Collector cut-off current ICEO V

CB= - 40 V, IB=0 -1

µA

Emi tter cut -o ff curr e n t IEBO V

EB= -5 V, IC=0 -0.1

µA

HFE(1) V

CE=-1 V, IC= -1 A 50 250

HFE(2) V

CE=-1 V, IC= -1 0 mA 55 DC current gain

HFE(3) V

CE=-1 V, IC= -100 mA 60

Collector-emitter saturation vol tage VCE(sat) I

C= -1 A, IB= -10 0 mA -0.5 V

Base-emitter voltage VBE(on) V

CE= -1 V, IC= -1 A -1.2 V

Transition fre quency f T VCE=-10 V , IC= -50 mA 50 MHz

1 2 3

TO-92

1. E MITTER

2. BASE

3. COLLECTOR

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