TGC2510-SM
Ku-Band Upconverter
Preliminary Data Sheet: Rev B 10/11/12 - 1 of 22 - Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network®
Applications
28-pin 5x5mm QFN package
• VSAT
• Point-to-Point Radio
• Test Equipment & Sensors
Product Features
Functional Block Diagram
• RF Frequency Range: 10 - 16 GHz
• IF Frequency: DC – 3.5 GHz
• LO Frequency: 6.5 – 19 GHz
• LO Input Power: 0 to 6 dBm
• Conversion Gain: 17 dB
• OTOI: 33 dBm at max gain
• Attenuation Range: 15 dB typical
• Package Dimensions: 5.0 x 5.0 x 1.3 mm
General Description
Pin Configuration
The TriQuint TGC2510-SM is a Ku-Band image
reject up-converter with integrated LO buffer
amplifier and output variable gain amplifier. The
TGC2510-SM operates from an RF of 10 to 16 GHz
and LO from 6.5 to 19 GHz with IF inputs from DC
to 3.5GHz and is designed using TriQuint’s pHEMT
production process.
The TGC2510-SM typically provides 33 dBm of
output TOI at –10 dBm input power per tone and
has a conversion gain of 17 dB.
The TGC2510-SM is available in a low-cost,
surface mount 28 lead 5x5mm QFN package and is
ideally suited for Point-to-Point Radio, and Ku-Band
VSAT Ground Terminal.
Lead-free and RoHS compliant.
Evaluation Boards are available upon request.
Pin # Function Label
1, 7, 8, 9, 13, 14, 15,
16, 21, 22, 26, 28 GND
2 RF OUT
3, 11, 18, 19, 20 NC
4 VCTRL
5 VREF
6 VGRF
10 IF1
12 IF2
17 LO IN
23 VGLO
24 VDLO
25 VGX
27 VDRF
Ordering Information
Part No. ECCN Description
TGC2510-SM EAR99 Ku-band Upconverter
Standard T/R size = 500 pieces on a 13” reel.
2510
1249
5343
TGC2510-SM
Ku-Band Upconverter
Preliminary Data Sheet: Rev B 10/11/12 - 2 of 22 - Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network®
Specifications
Parameter Rating
VDRF 6 V
VDLO 6 V
IDRF 350 mA
IDLO 100 mA
VREF 3 V
VGRF, VGLO, VGX -2 to +1.5 V
VCTRL 3 V
IF1, IF2 -2 to +2 V
RF Input Power, 50Ω, T = 25°C 10 dBm
Channel Temperature, Tch 200 °C
Storage Temperature -65 to 125°C
Operation of this device outside the parameter ranges
given above may cause permanent damage.
Recommended Operating Conditions
Parameter Min
Typ Max
Units
Operating Temp. Range
-40 +25 +85 °C
VDRF 5 V
IDRF 240 mA
VGRF -0.70 V
VDLO 5 V
IDLO 60 mA
VGLO -0.63 V
VREF 2 V
VGX -1.2 V
VCTRL 0 V
LO Input Power 0 6 dBm
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
Electrical Specifications
Test conditions unless otherwise noted:
IF Input Power = -10 dBm, VGX = -1.2 V, VREF = 2 V, VDLO = 5 V, IDLO = 60 mA,
VDRF = 5 V, IDRF = 240 mA,
VCTRL = 0 V, for maximum gain.
Parameter Conditions Min Typ Max Units
RF Frequency Range 10 16 GHz
LO Frequency Range 6.5 19 GHz
IF Frequency Range DC 3.5 GHz
LO Input Power 0 6 dBm
Conversion Gain 17 dBm
OIP3 33 dBm
IMR 20 dB
TGC2510-SM
Ku-Band Upconverter
Preliminary Data Sheet: Rev B 10/11/12
© 2012 TriQuint Semiconductor, Inc.
Specifications
Thermal and Reliability Information
Parameter
Thermal Resistance, θ
JC
, measured to back of package
Channel Temperature (Tch), and Median Lifetime (Tm)
Channel Temperature (Tch), and Median Lifetime (Tm)
Under RF Drive
- 3 of 22 -
Disclaimer: Subject to change without notice
Connecting the
Digital World to the Global Network
Thermal and Reliability Information
Condition
, measured to back of package
Tbase = 85 °C
Channel Temperature (Tch), and Median Lifetime (Tm)
Tbase = 85 °C,
VDRF = 5 V, IDRF = 240 mA
VDLO = 5 V, IDLO = 60 mA
Pdiss = 1.5 W
Channel Temperature (Tch), and Median Lifetime (Tm)
Tbase = 85 °C
VDRF = 5 V, IDRF = 240 mA
VDLO = 5 V, IDLO = 85 mA
Pin = -10 dBm
Pdiss = 1.63 W
Disclaimer: Subject to change without notice
Digital World to the Global Network
®
Rating
θ
JC
= 26.1 °C/W
Tch = 124 °C
Tm = 2.3 E+7
Hours
Tch = 128 °C
Tm = 1.4 E+7
Hours
TGC2510-SM
Ku-Band Upconverter
Preliminary Data Sheet: Rev B 10/11/12 - 4 of 22 - Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network®
Typical Performance
IF Input Power = -10 dBm, VDLO = 5 V, IDLO = 60 mA, VDRF = 5 V, IDRF = 240 mA, VGX = -1.2 V, VREF = 2 V.
Data taken with external IF hybrid and LO nulling applied.
0
5
10
15
20
25
10 11 12 13 14 15 16
Conversion Gain (dB)
RF Frequency (GHz)
Conversion Gain vs. RF vs. IF
Vcontrol = 0 V, LO = 0 dBm, LSB, 25 °C
1.0 GHz
2.0 GHz
3.0 GHz
3.5 GHz
0
5
10
15
20
25
10 11 12 13 14 15 16
Conversion Gain (dB)
RF Frequency (GHz)
Conversion Gain vs. RF vs. IF
Vcontrol = 0 V, LO = 0 dBm, USB, 25 °C
1.0 GHz
2.0 GHz
3.0 GHz
3.5 GHz
0
5
10
15
20
25
10 11 12 13 14 15 16
Conversion Gain (dB)
RF Frequency (GHz)
Conversion Gain vs. RF vs. IF
Vcontrol = 0 V, LO = 6 dBm, LSB, 25 °C
1.0 GHz
2.0 GHz
3.0 GHz
3.5 GHz
-20
-15
-10
-5
0
5
10 11 12 13 14 15 16
Conversion Gain (dB)
RF Frequency (GHz)
Conversion Gain vs. RF vs. IF
Vcontrol = 2 V, LO = 0 dBm, LSB, 25 °C
1.0 GHz
2.0 GHz
3.0 GHz
3.5 GHz
0
5
10
15
20
25
10 11 12 13 14 15 16
Conversion Gain (dB)
RF Frequency (GHz)
Conversion Gain vs. RF vs. IF
Vcontrol = 0 V, LO = 6 dBm, USB, 25 °C
1.0 GHz
2.0 GHz
3.0 GHz
3.5 GHz
-20
-15
-10
-5
0
5
10 11 12 13 14 15 16
Conversion Gain (dB)
RF Frequency (GHz)
Conversion Gain vs. RF vs. IF
Vcontrol = 2 V, LO = 0 dBm, USB, 25 °C
1.0 GHz
2.0 GHz
3.0 GHz
3.5 GHz
TGC2510-SM
Ku-Band Upconverter
Preliminary Data Sheet: Rev B 10/11/12 - 5 of 22 - Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network®
Typical Performance
IF Input Power = -10 dBm, VDLO = 5 V, IDLO = 60 mA, VDRF = 5 V, IDRF = 240 mA, VGX = -1.2 V, VREF = 2 V.
Data taken with external IF hybrid and LO nulling applied.
-20
-15
-10
-5
0
5
10 11 12 13 14 15 16
Conversion Gain (dB)
RF Frequency (GHz)
Conversion Gain vs. RF vs. IF
Vcontrol = 2 V, LO = 6 dBm, LSB, 25 °C
1.0 GHz
2.0 GHz
3.0 GHz
3.5 GHz
-20
-15
-10
-5
0
5
10 11 12 13 14 15 16
Conversion Gain (dB)
RF Frequency (GHz)
Conversion Gain vs. RF vs. IF
Vcontrol = 2 V, LO = 6 dBm, USB, 25 °C
1.0 GHz
2.0 GHz
3.0 GHz
3.5 GHz
0
10
20
30
40
50
10 11 12 13 14 15 16
Image Rejection Ratio (dB)
RF Frequency (GHz)
IMR vs. RF Output and IF Input
Vcontrol = 0 V, LO = 6 dBm, LSB, 25 °C
1.0 GHz
2.0 GHz
3.0 GHz
3.5 GHz
0
10
20
30
40
50
10 11 12 13 14 15 16
Image Rejection Ratio (dB)
RF Frequency (GHz)
IMR vs. RF Output and IF Input
Vcontrol = 0 V, LO = 0 dBm, LSB, 25 °C
1.0 GHz
2.0 GHz
3.0 GHz
3.5 GHz
0
10
20
30
40
50
10 11 12 13 14 15 16
Image Rejection Ratio (dB)
RF Frequency (GHz)
IMR vs. RF Output and IF Input
Vcontrol = 0 V, LO = 0 dBm, USB, 25 °C
1.0 GHz
2.0 GHz
3.0 GHz
3.5 GHz
0
10
20
30
40
50
10 11 12 13 14 15 16
Image Rejection Ratio (dB)
RF Frequency (GHz)
IMR vs. RF Output and IF Input
Vcontrol = 0 V, LO = 6 dBm, USB, 25 °C
1.0 GHz
2.0 GHz
3.0 GHz
3.5 GHz
TGC2510-SM
Ku-Band Upconverter
Preliminary Data Sheet: Rev B 10/11/12 - 6 of 22 - Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network®
Typical Performance
IF Input Power = -10 dBm, VDLO = 5 V, IDLO = 60 mA, VDRF = 5 V, IDRF = 240 mA, VGX = -1.2 V, VREF = 2 V.
Data taken with external IF hybrid and LO nulling applied.
0
10
20
30
40
50
10 11 12 13 14 15 16
Image Rejection Ratio (dB)
RF Frequency (GHz)
IMR vs. RF Output and IF Input
Vcontrol = 2 V, LO = 0 dBm, LSB, 25 °C
1.0 GHz
2.0 GHz
3.0 GHz
3.5 GHz
0
10
20
30
40
50
10 11 12 13 14 15 16
Image Rejection Ratio (dB)
RF Frequency (GHz)
IMR vs. RF Output and IF Input
Vcontrol = 2 V, LO = 6 dBm, LSB, 25 °C
1.0 GHz
2.0 GHz
3.0 GHz
3.5 GHz
0
10
20
30
40
50
10 11 12 13 14 15 16
Image Rejection Ratio (dB)
RF Frequency (GHz)
IMR vs. RF Output and IF Input
Vcontrol = 2 V, LO = 0 dBm, USB, 25 °C
1.0 GHz
2.0 GHz
3.0 GHz
3.5 GHz
0
10
20
30
40
50
10 11 12 13 14 15 16
Image Rejection Ratio (dB)
RF Frequency (GHz)
IMR vs. RF Output and IF Input
Vcontrol = 2 V, LO = 6 dBm, USB, 25 °C
1.0 GHz
2.0 GHz
3.0 GHz
3.5 GHz
0
5
10
15
20
25
0 0.5 1 1.5 2 2.5 3 3.5 4
Conversion Gain (dB)
IF Frequency (GHz)
Conversion Gain vs. IF vs. RF
Vcontrol = 0 V, LO = 0 dBm, LSB, 25 °C
10 GHz
13 GHz
16 GHz
0
5
10
15
20
25
0 0.5 1 1.5 2 2.5 3 3.5 4
Conversion Gain (dB)
IF Frequency (GHz)
Conversion Gain vs. IF vs. RF
Vcontrol = 0 V, LO = 0 dBm, USB, 25 °C
10 GHz
13 GHz
16 GHz
TGC2510-SM
Ku-Band Upconverter
Preliminary Data Sheet: Rev B 10/11/12 - 7 of 22 - Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network®
Typical Performance
IF Input Power = -10 dBm, VDLO = 5 V, IDLO = 60 mA, VDRF = 5 V, IDRF = 240 mA, VGX = -1.2 V, VREF = 2 V.
Data taken with external IF hybrid and LO nulling applied
0
5
10
15
20
25
30
35
40
10 11 12 13 14 15 16
OIP3 (dBm)
RF Frequency (GHz)
OIP3 vs. RF Output and IF Input
Vcontrol = 0 V, LO = 0 dBm, USB, 25 °C
1.0 GHz
2.0 GHz
3.0 GHz
3.5 GHz
0
5
10
15
20
25
30
35
40
10 11 12 13 14 15 16
OIP3 (dBm)
RF Frequency (GHz)
OIP3 vs. RF Output and IF Input
Vcontrol = 0 V, LO = 6 dBm, USB, 25 °C
1.0 GHz
2.0 GHz
3.0 GHz
3.5 GHz
0
5
10
15
20
25
0 0.5 1 1.5 2 2.5 3 3.5 4
Conversion Gain (dB)
IF Frequency (GHz)
Conversion Gain vs. IF vs. RF
Vcontrol = 0 V, LO = 6 dBm, LSB, 25 °C
10 GHz
13 GHz
16 GHz
0
5
10
15
20
25
0 0.5 1 1.5 2 2.5 3 3.5 4
Conversion Gain (dB)
IF Frequency (GHz)
Conversion Gain vs. IF vs. RF
Vcontrol = 0 V, LO = 6 dBm, USB, 25 °C
10 GHz
13 GHz
16 GHz
0
5
10
15
20
25
30
35
40
10 11 12 13 14 15 16
OIP3 (dBm)
RF Frequency (GHz)
OIP3 vs. RF Output and IF Input
Vcontrol = 0 V, LO = 0 dBm, LSB, 25 °C
1.0 GHz
2.0 GHz
3.0 GHz
3.5 GHz
0
5
10
15
20
25
30
35
40
10 11 12 13 14 15 16
OIP3 (dBm)
RF Frequency (GHz)
OIP3 vs. RF Output and IF Input
Vcontrol = 0 V, LO = 6 dBm, LSB, 25 °C
1.0 GHz
2.0 GHz
3.0 GHz
3.5 GHz
TGC2510-SM
Ku-Band Upconverter
Preliminary Data Sheet: Rev B 10/11/12 - 8 of 22 - Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network®
Typical Performance
IF Input Power = -10 dBm, VDLO = 5 V, IDLO = 60 mA, VDRF = 5 V, IDRF = 240 mA, VGX = -1.2 V, VREF = 2 V.
Data taken with external IF hybrid and LO nulling applied.
0
5
10
15
20
25
30
35
40
10 11 12 13 14 15 16
OIP3 (dBm)
RF Frequency (GHz)
OIP3 vs. RF Output and IF Input
Vcontrol = 2 V, LO = 0 dBm, USB, 25 °C
1.0 GHz
2.0 GHz
3.0 GHz
3.5 GHz
0
5
10
15
20
25
30
35
40
10 11 12 13 14 15 16
OIP3 (dBm)
RF Frequency (GHz)
OIP3 vs. RF Output and IF Input
Vcontrol = 2 V, LO = 6 dBm, USB, 25 °C
1.0 GHz
2.0 GHz
3.0 GHz
3.5 GHz
0
5
10
15
20
25
30
35
40
10 11 12 13 14 15 16
OIP3 (dBm)
RF Frequency (GHz)
OIP3 vs. RF Output and IF Input
Vcontrol = 2 V, LO = 0 dBm, LSB, 25 °C
1.0 GHz
2.0 GHz
3.0 GHz
3.5 GHz
0
5
10
15
20
25
30
35
40
10 11 12 13 14 15 16
OIP3 (dBm)
RF Frequency (GHz)
OIP3 vs. RF Output and IF Input
Vcontrol = 2 V, LO = 6 dBm, LSB, 25 °C
1.0 GHz
2.0 GHz
3.0 GHz
3.5 GHz
0
5
10
15
20
25
30
35
40
10 11 12 13 14 15 16
OIP3 (dBm)
RF Frequency (GHz)
OIP3 vs. RF Output and IF Input
Vcontrol = 2 V, LO = 6 dBm, USB, 25 °C
1.0 GHz
2.0 GHz
3.0 GHz
3.5 GHz
0
10
20
30
40
50
10 11 12 13 14 15 16
Isolation (dB)
LO Frequency (GHz)
L-I Isolation vs. LO Frequency
Vcontrol = 0 V, USB, 25 °C
LO = 0 dBm
LO = 6 dBm
0
10
20
30
40
50
10 11 12 13 14 15 16
Isolation (dB)
LO Frequency (GHz)
L-I Isolation vs. LO Frequency
Vcontrol = 0 V, LSB, 25 °C
LO = 0 dBm
LO = 6 dBm
TGC2510-SM
Ku-Band Upconverter
Preliminary Data Sheet: Rev B 10/11/12 - 9 of 22 - Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network®
Typical Performance
IF Input Power = -10 dBm, VDLO = 5 V, IDLO = 60 mA, VDRF = 5 V, IDRF = 240 mA, VGX = -1.2 V, VREF = 2 V.
Data taken with external IF hybrid and LO nulling applied.
0
10
20
30
40
50
10 11 12 13 14 15 16
Isolation (dB)
LO Frequency (GHz)
L-R Isolation vs. LO Frequency
Vcontrol = 0 V, LSB, 25 °C
LO = 0 dBm
LO = 6 dBm
0
10
20
30
40
50
10 11 12 13 14 15 16
Isolation (dB)
LO Frequency (GHz)
L-I Isolation vs. LO Frequency
Vcontrol = 2 V, LSB, 25 °C
LO = 0 dBm
LO = 6 dBm
0
10
20
30
40
50
10 11 12 13 14 15 16
Isolation (dB)
LO Frequency (GHz)
L-R Isolation vs. LO Frequency
Vcontrol = 2 V, LSB, 25 °C
LO = 0 dBm
LO = 6 dBm
0
10
20
30
40
50
10 11 12 13 14 15 16
Isolation (dB)
LO Frequency (GHz)
L-I Isolation vs. LO Frequency
Vcontrol = 2 V, USB, 25 °C
LO = 0 dBm
LO = 6 dBm
0
10
20
30
40
50
10 11 12 13 14 15 16
Isolation (dBm)
LO Frequency (GHz)
L-R Isolation vs. LO Frequency
Vcontrol = 0 V, USB, 25 °C
LO = 0 dBm
LO = 6 dBm
0
10
20
30
40
50
10 11 12 13 14 15 16
Isolation (dB)
LO Frequency (GHz)
L-R Isolation vs. LO Frequency
Vcontrol = 2 V, USB, 25 °C
LO = 0 dBm
LO = 6 dBm
TGC2510-SM
Ku-Band Upconverter
Preliminary Data Sheet: Rev B 10/11/12 - 10 of 22 -
Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network®
Typical Performance
IF Input Power = -10 dBm, VDLO = 5 V, IDLO = 60 mA, VDRF = 5 V, IDRF = 240 mA, VGX = -1.2 V, VREF = 2 V.
Data taken with external IF hybrid and LO nulling applied
0
10
20
30
40
50
60
70
80
10 11 12 13 14 15 16
Isolation (dB)
LO Frequency (GHz)
I to R Isolation vs. LO vs. IF
Vcontrol = 0 V, LO = 0 dBm, USB, 25 °C
1.0 GHz
2.0 GHz
3.0 GHz
3.5 GHz
0
10
20
30
40
50
60
70
80
10 11 12 13 14 15 16
Isolation (dB)
LO Frequency (GHz)
I to R Isolation vs. LO vs. IF
Vcontrol = 0 V, LO = 6 dBm, USB, 25 °C
1.0 GHz
2.0 GHz
3.0 GHz
3.5 GHz
0
10
20
30
40
50
60
70
80
10 11 12 13 14 15 16
Isolation (dB)
LO Frequency (GHz)
I to R Isolation vs. LO vs. IF
Vcontrol = 2 V, LO = 0 dBm, USB, 25 °C
1.0 GHz
2.0 GHz
3.0 GHz
3.5 GHz
0
10
20
30
40
50
60
70
80
10 11 12 13 14 15 16
Isolation (dB)
LO Frequency (GHz)
I to R Isolation vs. LO vs. IF
Vcontrol = 0 V, LO = 0 dBm, LSB, 25 °C
1.0 GHz
2.0 GHz
3.0 GHz
3.5 GHz
0
10
20
30
40
50
60
70
80
10 11 12 13 14 15 16
Isolation (dB)
LO Frequency (GHz)
I to R Isolation vs. LO vs. IF
Vcontrol = 0 V, LO = 6 dBm, LSB, 25 °C
1.0 GHz
2.0 GHz
3.0 GHz
3.5 GHz
0
10
20
30
40
50
60
70
80
10 11 12 13 14 15 16
Isolation (dB)
LO Frequency (GHz)
I to R Isolation vs. LO vs. IF
Vcontrol = 2 V, LO = 0 dBm, LSB, 25 °C
1.0 GHz
2.0 GHz
3.0 GHz
3.5 GHz
TGC2510-SM
Ku-Band Upconverter
Preliminary Data Sheet: Rev B 10/11/12 - 11 of 22 -
Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network®
Typical Performance
IF Input Power = -10 dBm, VDLO = 5 V, IDLO = 60 mA, VDRF = 5 V, IDRF = 240 mA, VGX = -1.2 V, VREF = 2 V.
Data taken with external IF hybrid and LO nulling applied
-5
0
5
10
15
10 11 12 13 14 15 16
Input 1dB Compression (dBm)
RF Frequency (GHz)
Input 1dB Compression vs. RF Output
Vcontrol = 0 V, LO = 0 dBm, USB, 25 °C
1.0 GHz
2.0 GHz
3.0 GHz
3.5 GHz
-5
0
5
10
15
10 11 12 13 14 15 16
Input 1dB Compression (dBm)
RF Frequency (GHz)
Input 1dB Compression vs. RF Output
Vcontrol = 0 V, LO = 6 dBm, USB, 25 °C
1.0 GHz
2.0 GHz
3.0 GHz
3.5 GHz
0
10
20
30
40
50
60
70
80
10 11 12 13 14 15 16
Isolation (dB)
LO Frequency (GHz)
I to R Isolation vs. LO vs. IF
Vcontrol = 2 V, LO = 6 dBm, USB, 25 °C
1.0 GHz
2.0 GHz
3.0 GHz
3.5 GHz
0
10
20
30
40
50
60
70
80
10 11 12 13 14 15 16
Isolation (dB)
LO Frequency (GHz)
I to R Isolation vs. LO vs. IF
Vcontrol = 2 V, LO = 6 dBm, LSB, 25 °C
1.0 GHz
2.0 GHz
3.0 GHz
3.5 GHz
-5
0
5
10
15
10 11 12 13 14 15 16
Input 1dB Compression (dBm)
RF Frequency (GHz)
Input 1dB Compression vs. RF Output
Vcontrol = 0 V, LO = 0 dBm, LSB, 25 °C
1.0 GHz
2.0 GHz
3.0 GHz
3.5 GHz
-5
0
5
10
15
10 11 12 13 14 15 16
Input 1dB Compression (dBm)
RF Frequency (GHz)
Input 1dB Compression vs. RF Output
Vcontrol = 0 V, LO = 6 dBm, LSB, 25 °C
1.0 GHz
2.0 GHz
3.0 GHz
3.5 GHz
-5
0
5
10
15
10 11 12 13 14 15 16
Input 1dB Compression (dBm)
RF Frequency (GHz)
Input 1dB Compression vs. RF Output
Vcontrol = 0 V, LO = 6 dBm, USB, 25 °C
1.0 GHz
2.0 GHz
3.0 GHz
3.5 GHz
TGC2510-SM
Ku-Band Upconverter
Preliminary Data Sheet: Rev B 10/11/12 - 12 of 22 -
Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network®
Typical Performance
IF Input Power = -10 dBm, VDLO = 5 V, IDLO = 60 mA, VDRF = 5 V, IDRF = 240 mA, VGX = -1.2 V, VREF = 2 V.
Data taken with external IF hybrid and LO nulling applied.
-5
0
5
10
15
10 11 12 13 14 15 16
Input 1dB Compression (dBm)
RF Frequency (GHz)
Input 1dB Compression vs. RF Output
Vcontrol = 2 V, LO = 0 dBm, USB, 25 °C
1.0 GHz
2.0 GHz
3.0 GHz
3.5 GHz
-5
0
5
10
15
10 11 12 13 14 15 16
Input 1dB Compression (dBm)
RF Frequency (GHz)
Input 1dB Compression vs. RF Output
Vcontrol = 2 V, LO = 6 dBm, USB, 25 °C
1.0 GHz
2.0 GHz
3.0 GHz
3.5 GHz
-5
0
5
10
15
10 11 12 13 14 15 16
Input 1dB Compression (dBm)
RF Frequency (GHz)
Input 1dB Compression vs. RF Output
Vcontrol = 2 V, LO = 0 dBm, LSB, 25 °C
1.0 GHz
2.0 GHz
3.0 GHz
3.5 GHz
-5
0
5
10
15
10 11 12 13 14 15 16
Input 1dB Compression (dBm)
RF Frequency (GHz)
Input 1dB Compression vs. RF Output
Vcontrol = 2 V, LO = 6 dBm, LSB, 25 °C
1.0 GHz
2.0 GHz
3.0 GHz
3.5 GHz
-1
-0.8
-0.6
-0.4
-0.2
0
0.2
0.4
0.6
0.8
1
10 11 12 13 14 15 16
Voltage (V)
LO Frequency (GHz)
Nulling Voltages vs. LO Frequency
LO at 3 dBm, IF = 2.5 GHz, USB, 25 °C
VDI_Min Gain
VDI_Max Gain
VDQ_Min Gain
VDQ_Max gain
-1
-0.8
-0.6
-0.4
-0.2
0
0.2
0.4
0.6
0.8
1
10 11 12 13 14 15 16
Voltage (V)
LO Frequency (GHz)
Nulling Voltages vs. LO Frequency
LO at 3 dBm, IF = 3.5 GHz, USB, 25 °C
VDI_Min Gain
VDI_Max Gain
VDQ_Min Gain
VDQ_Max gain
TGC2510-SM
Ku-Band Upconverter
Preliminary Data Sheet: Rev B 10/11/12 - 13 of 22 -
Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network®
Typical Performance
IF Input Power = -10 dBm, VDLO = 5 V, IDLO = 60 mA, VDRF = 5 V, IDRF = 240 mA, VGX = -1.2 V, VREF = 2 V
Data taken with external IF hybrid and LO nulling applied.
0
5
10
15
20
25
10 11 12 13 14 15 16
Conversion Gain (dB)
RF Frequency (GHz)
Conversion Gain vs. RF vs. Temperature
Vcontrol = 0 V, LO = 0 dBm, USB
85 °C
25 °C
-40 °C
IF @ 2.0 GHz
0
5
10
15
20
25
10 11 12 13 14 15 16
Conversion Gain (dB)
RF Frequency (GHz)
Conversion Gain vs. RF vs. Temperature
Vcontrol = 0 V, LO = 0 dBm, USB
85 °C
25 °C
-40 °C
IF @ 3.5 GHz
0
10
20
30
40
50
10 11 12 13 14 15 16
OIP3 (dBm)
RF Frequency (GHz)
OIP3 vs. RF Output vs. Temperature
Vcontrol = 0 V, LO = 6 dBm, USB
85 °C
25 °C
-40 °C
IF @ 2.0 GHz
0
5
10
15
20
25
10 11 12 13 14 15 16
Conversion Gain (dB)
RF Frequency (GHz)
Conversion Gain vs. RF vs. Temperature
Vcontrol = 0 V, LO = 0 dBm, LSB
85 °C
25 °C
-40 °C
IF = 2.0 GHz
0
5
10
15
20
25
10 11 12 13 14 15 16
Conversion Gain (dB)
RF Frequency (GHz)
Conversion Gain vs. RF vs. Temperature
Vcontrol = 0 V, LO = 0 dBm, LSB
85 °C
25 °C
-40 °C
IF = 3.5 GHz
0
10
20
30
40
50
10 11 12 13 14 15 16
OIP3 (dBm)
RF Frequency (GHz)
OIP3 vs. RF Output vs. Temperature
Vcontrol = 0 V, LO = 6 dBm, LSB
85 °C
25 °C
-40 °C
IF = 2.0 GHz
TGC2510-SM
Ku-Band Upconverter
Preliminary Data Sheet: Rev B 10/11/12 - 14 of 22 -
Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network®
Typical Performance
IF Input Power = -10 dBm, VDLO = 5 V, IDLO = 60 mA, VDRF = 5 V, IDRF = 240 mA, VGX = -1.2 V, VREF = 2 V.
Data taken with external IF hybrid and LO nulling applied
0
10
20
30
40
50
10 11 12 13 14 15 16
OIP3 (dBm)
RF Frequency (GHz)
OIP3 vs. RF Output vs. Temperature
Vcontrol = 0 V, LO = 6 dBm, USB
85 °C
25 °C
-40 °C
IF @ 3.5 GHz
0
10
20
30
40
50
10 11 12 13 14 15 16
OIP3 (dBm)
RF Frequency (GHz)
OIP3 vs. RF Output vs. Temperature
Vcontrol = 0 V, LO = 6 dBm, LSB
85 °C
25 °C
-40 °C
IF = 3.5 GHz
0
10
20
30
40
50
10 11 12 13 14 15 16
Image Rejection Ratio (dB)
RF Frequency (GHz)
IMR vs. RF Output vs. Temperature
Vcontrol = 0 V, LO = 0 dBm, LSB
85 °C
25 °C
-40 °C
IF = 2.0 GHz
0
10
20
30
40
50
10 11 12 13 14 15 16
Image Rejection Ratio (dB)
RF Frequency (GHz)
IMR vs. RF Output vs. Temperature
Vcontrol = 0 V, LO = 0 dBm, LSB
85 °C
25 °C
-40 °C
IF = 3.5 GHz
0
10
20
30
40
50
10 11 12 13 14 15 16
Image Rejection Ratio (dB)
RF Frequency (GHz)
IMR vs. RF Output vs. Temperature
Vcontrol = 0 V, LO = 0 dBm, USB
85 °C
25 °C
-40 °C
IF @ 2.0 GHz
0
10
20
30
40
50
10 11 12 13 14 15 16
Image Rejection Ratio (dB)
RF Frequency (GHz)
IMR vs. RF Output vs. Temperature
Vcontrol = 0 V, LO = 0 dBm, USB
85 °C
25 °C
-40 °C
IF @ 3.5 GHz
TGC2510-SM
Ku-Band Upconverter
Preliminary Data Sheet: Rev B 10/11/12 - 15 of 22 -
Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network®
Typical Performance
IF Input Power = -10 dBm, VDLO = 5 V, IDLO = 60 mA, VDRF = 5 V, IDRF = 240 mA, VGX = -1.2 V, VREF = 2 V.
Data taken with external IF hybrid and LO nulling applied
M x N Spurious Outputs for LSB
LO = 0 – 6 dBm, 25 °C; All values are in dBc.
For LSB IF = 2.0 GHz: LO = 12.0 GHz to 18.0 GHz; IF = 3.5 GHz: LO = 13.5 GHz to 19.0 GHz.
M x N Spurious Outputs for USB
LO = 0 – 6 dBm, 25 °C; All values are in dBc.
For USB IF = 2.0 GHz: LO = 8.0 GHz to 14.0 GHz; IF = 3.5 GHz: LO = 6.5 GHz to 12.5 GHz.
RF/LO 0 1 2 3
-3 --- 70 79 76
-2 --- 44 40 75
-1 --- 0 38 69
0 --- 24 30 38
1 61 24 69 68
2 62 44 79 75
3 72 78 78 76
Spurious Suppresion (dBc) for IF = 2.0 GHz
RF/LO 0 1 2 3
-3 --- 84 75 73
-2 --- 50 45 71
-1 --- 0 59 63
0 --- 21 28 34
1 51 27 64 69
2 49 64 74 74
3 85 77 70 ---
Spurious Suppresion (dBc) for IF = 3.5 GHz
RF/LO 0 1 2 3
-3 --- 70 46 44
-2 --- 46 29 54
-1 --- 17 20 15
0 --- 23 -17 25
1 56 0 8 26
2 28 33 32 62
3 48 43 66 71
Spurious Suppresion (dBc) for IF = 2.0 GHz
RF/LO 0 1 2 3
-3 --- 62 66 49
-2 --- 70 33 41
-1 --- 23 8 14
0 --- 19 -29 -17
1 23 0 4 11
2 27 30 38 41
3 56 58 64 72
Spurious Suppresion (dBc) for IF = 3.5 GHz
TGC2510-SM
Ku-Band Upconverter
Preliminary Data Sheet: Rev B 10/11/12 - 16 of 22 -
Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network®
Pin Description
TOP VIEW
Pin
Symbol
Description
1, 7, 8, 9, 13, 14, 15,
16, 21, 22, 26, 28 GND Internal Grounding; must be grounded on PCB.
2 RF OUT RF Output matched to 50 ohms, AC Coupled.
3, 11, 18, 19, 20 NC No internal connection; must be grounded on PCB.
4 VCTRL Control Voltage. Bias network is required; see Application Circuit on
page 17 as an example.
5 VREF Reference Voltage. Bias network is required; see Application Circuit on
page 17 as an example.
6 VGRF RF Gate Voltage. Bias network is required; see Application Circuit on
page 17 as an example.
10 IF1 IF Input matched to 50 ohms, DC coupled.
12 IF2 IF Input matched to 50 ohms, DC coupled.
17 LO IN LO Input, matched to 50 ohms, AC coupled.
23 VGLO LO Gate Voltage. Bias network is required; see Application Circuit on
page 17 as an example.
24 VDLO LO Drain Voltage. Bias network is required; see Application Circuit on
page 17 as an example.
25 VGX Mixer Voltage. Bias network is required; see Application Circuit on page
17 as an example.
27 VDRF RF Drain Voltage. Bias network is required; see Application Circuit on
page 17 as an example.
29 GND
Backside Paddle. Multiple vias should be employed to minimize
inductance and thermal resistance; see Mounting Configuration on page
20 for suggested footprint.
TGC2510-SM
Ku-Band Upconverter
Preliminary Data Sheet: Rev B 10/11/12 - 17 of 22 -
Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network®
Application Circuit
Biasing Procedures
Bias up
Bias Down
Set VGX to -1.2 V Turn off RF signal
Set VREF to 2.0 V Reduce VDLO to 0 V
Set VCTRL to 0 V Reduce VDRF to 0 V
Set VGLO to -1.5 V Set VDI to 0 V, if used for LO nulling
Set VDLO to 5.0 V Set VDQ to 0 V, if used for LO nulling
Increase VGLO to get IDLO = 60 mA Reduce VGLO to 0 V
Set VGRF to -1.5 V Reduce VGRF to 0 V
Set VDRF to 5.0 V Reduce VREF to 0 V
Increase VGRF to get IDRF = 240 mA Reduce VCTRL to 0 V
Set VDI, VDQ to 0 V; or no connection Reduce VGX to 0 V
Apply RF signal
VGRF
LO Input
IF Input
2510
YYWW
XXXX
RF Output
VREF
VCTRL
IF Input
VDI VDQ
VGLO
VDLO
VDRF
VGX
USB
LSB
TGC2510-SM
Ku-Band Upconverter
Preliminary Data Sheet: Rev B 10/11/12 - 18 of 22 -
Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network®
Application Circuit
PC Board Layout
Board material is RO4003 0.008” thickness with ½ oz copper cladding.
For further technical information, refer to the TGC2510-SM Product Information page.
Bill of Material
Ref Des Value
Description Manufacturer Part Number
C1 – C2 10 pF Cap, 0402, 50V, 5%, NPO various
C3 – C9 100 pF
Cap, 0402, 50V, 5%, NPO various
C10 – C13 0.01 µF
Cap, 0805, 25V, 5%, COG various
C14 – C17 1 µF Cap, 0805, 25V, 5%, X5R various
L1 – L4 27 nH Ind, 0201, 100 mA, 5%, SMD various
R1 0 Ω Res, 0402, 0.01W, SMD various
R2 50 Ω Res, 0402, 0.05W, 0.1%, SMD various
X1 Power Splitter Mini-Circuits QCN-25+ or QCN45+
U1 Ku-Band Up-Converter TriQuint TGC2510-SM
X1
X1
R1
R2
LSB
Configuration
X1
U1
X1
C8
C9
C7
C1 C2
C3 C6
C5
C4
C10 C11
C12
C14
C17 C13
C15
C16
L1
R1
L2
L3 L4
R2
TGC2510-SM
Ku-Band Upconverter
Preliminary Data Sheet: Rev B 10/11/12 - 19 of 22 -
Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network®
Mechanical Information
Package Information and Dimensions
All dimensions are in millimeters.
The TGC2510-SM will be marked with the “2510” designator and a lot code marked below the part designator.
The “YY” represents the last two digits of the year the part was manufactured, the “WW” is the work week, and
the “XXXX” is an auto-generated number.
This package is lead-free/RoHS-compliant with a copper alloy base (CDA194), and the plating material on the
leads is NiPdAu. It is compatible with lead-free (maximum 260 °C reflow temperature) soldering processes.
TGC2510-SM
Ku-Band Upconverter
Preliminary Data Sheet: Rev B 10/11/12 - 20 of 22 -
Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network®
Mechanical Information
PCB Mounting Pattern
All dimensions are in millimeters.
Notes:
1. The pad pattern shown has been developed and tested for optimized
assembly at TriQuint Semiconductor. The PCB land pattern has been
developed to accommodate lead and package tolerances. Since
surface mount processes vary from company to company, careful
process development is recommended.
2. Ground / thermal vias are critical for the proper performance of this
device. Vias should use a .35mm diameter drill and have a final plated
thru diameter of .25 mm.
Tape and Reel Information
Tape and reel specifications for this part are also available on the TriQuint website in the “Application Notes”
section.
Standard T/R size = 500 pieces on a 13” reel.
MATERIAL CAVITY (mm) DISTANCE BETWEEN
CENTERLINE (mm)
CARRIER
TAPE (mm)
COVER
TAPE (mm)
Vendor Vendor P/N Length
(A0)
Width
(B0)
Depth
(K0)
Pitch
(P1)
Length
direction
(P2)
Width
Direction
(F)
Width
(W)
Width
(W)
Advantek BCC5X5-B 5.25 5.25 1.8 8.0 2.00 5.50 12.0 9.20
TGC2510-SM
Ku-Band Upconverter
Preliminary Data Sheet: Rev B 10/11/12
© 2012 TriQuint Semiconductor, Inc.
Product Compliance Information
ESD Information
ESD Rating:
TBD
Value:
Passes ≥ TBD V min.
Test:
Human Body Model (HBM)
Standard:
JEDEC Standard JESD22
MSL Rating
Moisture Sensitivity Level
(MSL) TBD
at 260°C
reflow
per JEDEC
standard IPC/JEDEC J
Recommended Soldering Temperature Profile
-
21 of 22
-
Disclaimer: Subject to change without notice
Connecting the
Digital World to the Global Network
Product Compliance Information
Human Body Model (HBM)
JEDEC Standard JESD22
-A114
Solderability
Compatible with lead-free
soldering processes,
260 °C maximum
reflow temp
Package lead plating: NiPdAu
The use of no-
clean solder to avoid washing after
soldering is recommended.
This package is not
compatible with
containing lead.
RoHS Compliance
This part is
compliant with EU 2002/95/EC RoHS
directive (Restrictions on the Use of Certain
Hazardous Substances in Electrical and
Electronic Equipment).
This product also has the following attributes:
• Lead Free
•
Halogen Free (Chlorine, Bromine)
• Antimony Free
• TBBP-A (C
15
H
12
Br
4
0
2
) Free
• PFOS Free
• SVHC Free
at 260°C
convection
standard IPC/JEDEC J
-STD-020.
Recommended Soldering Temperature Profile
Disclaimer: Subject to change without notice
Digital World to the Global Network
®
soldering processes,
reflow temp
erature.
Package lead plating: NiPdAu
clean solder to avoid washing after
compatible with
solder
compliant with EU 2002/95/EC RoHS
directive (Restrictions on the Use of Certain
Hazardous Substances in Electrical and
This product also has the following attributes:
Halogen Free (Chlorine, Bromine)
) Free
TGC2510-SM
Ku-Band Upconverter
Preliminary Data Sheet: Rev B 10/11/12 - 22 of 22 -
Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network®
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and
information about TriQuint:
Web: www.triquint.com Tel: +1.972.994.8465
Email: info-sales@tqs.com Fax: +1.972.994.8504
For technical questions and application information:
Email: info-networks@tqs.com
Important Notice
The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the
information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information
contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information
contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the
entire risk associated with such information is entirely with the user. All information contained herein is subject to
change without notice. Customers should obtain and verify the latest relevant information before placing orders for
TriQuint products. The information contained herein or any use of such information does not grant, explicitly or
implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to
such information itself or anything described by such information.
TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-
sustaining applications, or other applications where a failure would reasonably be expected to cause severe
personal injury or death.