2SK2022-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=30V Guarantee Avalanche-proof TO-220F15 Applications 2.54 Switching regulators UPS DC-DC converters General purpose power amplifier 3. Source JEDEC EIAJ SC-67 Equivalent circuit schematic Maximum ratings and characteristics Absolute maximum ratings ( Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Continuous reverse drain current Gate-source peak voltage Max. power dissipation Operating and storage temperature range Symbol V DS ID ID(puls] IDR VGS PD Tch Tstg Rating 500 5 20 5 30 40 +150 -55 to +150 Unit V A A A V W C C Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Symbol V(BR)DSS VGS(th) IDSS Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=500V VGS=0V Gate-source leakage current Drain-source on-state resistance Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton (ton=td(on)+tr) Turn-off time toff (toff=td(off)+tf) Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV V SD t rr Qrr VGS=30V VDS=0V ID=2.5A VGS=10V ID=2.5A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V RG=10 ID=5A VGS=10V Min. Typ. 500 2.5 Tch=25C Tch=125C L=100H Tch=25C IF=2xIDR VGS=0V Tch=25C IF=IDR VGS=0V -di/dt=100A/s Tch=25C 3.0 10 0.2 10 1.2 2.0 4.0 1000 85 20 20 15 45 20 5 1.1 400 2 Max. 3.5 500 1.0 100 1.6 1500 130 30 30 25 70 30 1.65 Units V V A mA nA S pF ns A V ns C Thermal characteristics Item Thermal resistance Symbol Rth(ch-a) Rth(ch-c) Test Conditions channel to ambient channel to case Min. Typ. Max. 62.5 3.125 Units C/W C/W 1 2SK2022-01MR FUJI POWER MOSFET Characteristics Typical output characteristics On state resistance vs. Tch 15 4 10 RDS(on) ID [A] [] 2 5 0 0 10 20 0 -50 30 0 50 Tch [ C ] VDS [ V ] 100 150 Typical Drain-Source on state resistance vs. ID Typical transfer characteristics 12 8 10 6 8 RDS(on) [] ID 6 [A] 4 4 2 2 0 0 0 2 4 6 8 10 0 12 5 VGS [ V ] 10 15 ID [ A ] Gate threshold voltage vs. Tch Typical forward transconductance vs. ID 10 4.0 8 6 gfs [S] VGS(th) [V] 2.0 4 2 0 0 2 4 ID [ A ] 6 8 10 0 -50 0 50 100 150 Tch [ C ] 2 2SK2022-01MR FUJI POWER MOSFET Typical input charge Typical capacitance vs. VDS 101 400 20 100 C [nF] 300 VGS [V] VDS [V] 10-1 200 10-2 10-3 100 0 10 20 30 0 0 40 20 0 40 VDS [ V ] Qg [ nC ] Forward characteristics of reverse diode Allowable power dissipation vs. Tc 1 60 100 40 10 10 IF [A] PD [W] 10-1 20 10-2 0 0 0.5 1.0 1.5 0 50 VSD [ V ] 100 150 Tc [ C ] Safe operating area 102 Transient thermal impedance 101 ID [A] 100 100 Rth [C/W] 10-1 10-1 10-2 10-5 10-4 10-3 10-2 t [ sec. ] 10-1 100 101 10-2 0 10 101 102 VDS [ V ] 103 3