1
Item Symbol Rating Unit
Drain-source voltage V DS 500
Continuous drain current ID5
Pulsed drain current ID(puls] 20
Continuous reverse drain current IDR 5
Gate-source peak voltage VGS ±30
Max. power dissipation PD40
Operating and storage Tch +150
temperature range Tstg
2SK2022-01MR FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Equivalent circuit schematic
Maximum ratings and characteristics
Absolute maximum ratings ( Tc=25°C unless otherwise specified)
V
A
A
A
V
W
°C
°C
-55 to +150
Outline Drawings
FAP-IIA SERIES
Features
High speed switching
Low on-resistance
No secondary breakdown
Low driving power
High voltage
VGS=±30V Guarantee
Avalanche-proof
Applications
Switching regulators
UPS
DC-DC converters
General purpose power amplifier
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermal characteristics
Item Symbol Test Conditions
Zero gate voltage drain current IDSS
Min. Typ. Max. Units
V
V
µA
mA
nA
Ω
S
pF
ns
A
V
ns
µC
Min. Typ. Max. Units
Thermal resistance Rth(ch-a) channel to ambient
Rth(ch-c) channel to case 62.5
3.125 °C/W
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltage
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
(ton=td(on)+tr)
Turn-off time toff
(toff=td(off)+tf)
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID=1mA VGS=0V
ID=1mA VDS=VGS
VDS=500V V GS=0V Tch=25°C
Tch=125°C
VGS=±30V VDS=0V
ID=2.5A VGS=10V
ID=2.5A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=300V RG=10 Ω
ID=5A
VGS=10V
L=100µH Tch=25°C
IF=2xIDR VGS=0V Tch=25°C
IF=IDR VGS=0V
-di/dt=100A/µs Tch=25°C
500
2.5 3.0 3.5
10 500
0.2 1.0
10 100
1.2 1.6
2.0 4.0
1000 1500
85 130
20 30
20 30
15 25
45 70
20 30
51.1 1.65
400
2
Gate(G)
Source(S)
Drain(D)
JEDEC
EIAJ SC-67
TO-220F15
3. Source
2.54
2
Characteristics
2SK2022-01MR
FUJI POWER MOSFET
Typical output characteristics
VDS [ V ]
ID
[ A ]
On state resistance vs. Tch
RDS(on)
[ Ω ]
Tch [ °C ]
Typical transfer characteristics
VGS [ V ]
ID
[ A ]
Typical Drain-Source on state resistance vs. ID
ID [ A ]
RDS(on)
[ Ω ]
Typical forward transconductance vs. ID
ID [ A ]
gfs
[ S ]
Gate threshold voltage vs. Tch
Tch [ °C ]
VGS(th)
[ V ]
0 2 4 6 8 10 12
-50 0 50 100 150
0 10 20 30 -50 0 50 100 150
4.0
2.0
0
15
10
5
0
4
2
0
12
10
8
6
4
2
0 0 5 10 15
8
6
4
2
0
0 2 4 6 8 10
10
8
6
4
2
0
3
FUJI POWER MOSFET
Typical capacitance vs. VDS
VDS [ V ]
C
[nF]
Forward characteristics of reverse diode
VSD [ V ]
IF
[ A ]
Allowable power dissipation vs. Tc
Tc [ °C ]
PD
[ W ]
Transient thermal impedance
t [ sec. ]
Rth
[°C/W]
Safe operating area
ID
[ A ]
VDS [ V ]
Typical input charge
VDS
[ V ]
Qg [ nC ]
VGS
[ V ]
0 10 20 30 40
10-5 10-4 10-3 10-2 10-1 100 101
0 0.5 1.0 1.5
20
10
0
2SK2022-01MR
101
100
10-1
10-2
10-3 0 20 40
400
300
200
100
0
101
100
10-1
10-2
60
40
20
0 0 50 100 150
100
10-1
10-2
100 101 102 103
102
101
100
10-1
10-2
