©2001 Fairchild Semiconductor Corporation RHRD440, RHRD460, RHRD440S, RHRD460S Rev. A
File Number
3613.5
RHRD440, RHRD460, RHRD440S, RHRD460S
4A, 400V - 600V Hyperfast Diodes
The RHRD440, RHRD460, RHRD440S and RHRD460S are
hyperfast diodes with soft recovery characteristics
(t
rr
< 30ns). They have half the recovery time of ultrafast
diodes and are of silicon nitride passivated ion-implanted
epitaxial planar construction.
These devices are intended for use as freewheeling/
clamping diodes and rectifiers in a variety of switching power
supplies and other power switching applications. Their low
stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits,
reducing power loss in the switching transistors.
Formerly developmental type TA49055.
Symbol
Features
• Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . <30ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175
o
C
• Reverse Voltage Up to . . . . . . . . . . . . . . . . . . . . . . . . 600V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Packaging
JEDEC STYLE TO-251
JEDEC STYLE TO-252
Ordering Information
PART NUMBER PACKAGE BRAND
RHRD440 TO-251 RHR440
RHRD460 TO-251 RHR460
RHRD440S TO-252 RHR440
RHRD460S TO-252 RHR460
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA variant in the tape and reel, i.e.,
RHRD460S9A.
K
A
CATHODE
(FLANGE)
ANODE
CATHODE
ANODE
CATHODE
CATHODE
(FLANGE)
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RHRD440,
RHRD440S
RHRD460,
RHRD460S UNITS
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RRM
400 600 V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
RWM
400 600 V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
R
400 600 V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F(AV)
44A
(T
C
= 157
o
C)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FRM
88A
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
40 40 A
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
50 50 W
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AVL
10 10 mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
STG
, T
J
-65 to 175 -65 to 175
o
C
Maximum Lead Temperature for Soldering
(Leads at 0.063 in. (1.6mm) from case for 10s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
300 300
o
C
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
PKG
260 260
o
C
Data Sheet January 2000
T
itle
H
R
4
0,
H
RD
0
,
H
RD
0
S,
H
RD
0
S)
b-
t
A
,
0
V -
0
V
p
er-
t
o
des
u
tho
e
y-
r
ds
t
er-
r
po-
on,
p
er-
t
o
des
v
a-
c
he
e
rgy
t
ed,
i
tch
w
er
p
-
©2001 Fairchild Semiconductor Corporation RHRD440, RHRD460, RHRD440S, RHRD460S Rev. A
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL TEST CONDITION
RHRD440, RHRD440S RHRD460, RHRD460S
UNITSMIN TYP MAX MIN TYP MAX
V
F
I
F
= 4A - - 2.1 - - 2.1 V
I
F
= 4A, T
C
= 150
o
C - - 1.7 - - 1.7 V
I
R
V
R
= 400V - - 100 - - -
µ
A
V
R
= 600V -----100
µ
A
V
R
= 400V, T
C
= 150
o
C --500---
µ
A
V
R
= 600V, T
C
= 150
o
C -----500
µ
A
t
rr
I
F
= 1A, d
I
F
/dt = 200A/
µ
s - -30- -30ns
I
F
= 4A, d
I
F
/dt = 200A/
µ
s - -35- -35ns
t
a
I
F
= 4A, d
I
F
/dt = 200A/
µ
s - 16 - - 16 - ns
t
b
I
F
= 4A, d
I
F
/dt = 200A/
µ
s -7--7-ns
Q
RR
I
F
= 4A, d
I
F
/dt = 200A/
µ
s - 45 - - 45 - nC
C
J
V
R
= 10V, I
F
= 0A - 15 - - 15 - pF
R
θ
JC
--3- -3
o
C/W
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300
µ
s, D = 2%).
I
R
= Instantaneous reverse current.
t
rr
= Reverse recovery time (See Figure 9), summation of t
a
+ t
b
.
t
a
= Time to reach peak reverse current (See Figure 9).
t
b
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 9).
Q
RR
= Reverse recovery charge.
C
J
= Junction Capacitance.
R
θ
JC
= Thermal resistance junction to case.
pw = Pulse width.
D = Duty cycle.
Typical Performance Curves
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
VF, FORWARD VOLTAGE (V)
IF, FORWARD CURRENT (A)
20
10
1
0.5
0 0.5 1 1.5 2.5 32
25oC
100oC
175oC
VR, REVERSE VOLTAGE (V)
0 200 400 600300 500
500
100
0.01
0.1
100
0.001
175oC
100oC
25oC
IR, REVERSE CURRENT (µA)
RHRD440, RHRD460, RHRD440S, RHRD460S
©2001 Fairchild Semiconductor Corporation RHRD440, RHRD460, RHRD440S, RHRD460S Rev. A
FIGURE 3. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT FIGURE 4. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 5. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT FIGURE 6. CURRENT DERATING CURVE
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
Typical Performance Curves
(Continued)
IF, FORWARD CURRENT (A)
0.5
0
15
10
5
25
41
20
t, RECOVERY TIMES (ns)
tb
ta
30
trr
TC = 25oC, dIF/dt = 200A/µs
0.5
0
30
50
41
t, RECOVERY TIMES (ns)
IF, FORWARD CURRENT (A)
tb
40
10
trr
ta
20
TC = 100oC, dIF/dt = 200A/µs
0.5
0
40
60
41
t, RECOVERY TIMES (ns)
IF, FORWARD CURRENT (A)
tb
50
20
trr
ta
30
10
TC = 175oC, dIF/dt = 200A/µs
5
1
0145 150 160 170 175165
2
3
4
TC, CASE TEMPERATURE (oC)
155
DC
SQ. WAVE
IF(AV), AVERAGE FORWARD CURRENT (A)
VR, REVERSE VOLTAGE (V)
20
0
40
0 50 100 150 200
30
10
CJ, JUNCTION CAPACITANCE (pF)
50
RHRD440, RHRD460, RHRD440S, RHRD460S
©2001 Fairchild Semiconductor Corporation RHRD440, RHRD460, RHRD440S, RHRD460S Rev. A
Test Circuits and Waveforms
FIGURE 8. trr TEST CIRCUIT FIGURE 9. trr WAVEFORMS AND DEFINITIONS
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
RG
L
VDD
IGBT
CURRENT
SENSE
DUT
VGE
t1
t2
VGE AMPLITUDE AND
t1 AND t2 CONTROL IF
RG CONTROL dIF/dt
+
-
dt
dIF
IF
trr
tatb
0
IRM
0.25 IRM
DUT
CURRENT
SENSE
+
LR
VDD
R < 0.1Ω
EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL))
-
VDD
Q1
IMAX = 1A
L = 20mH
IV
t0t1t2
IL
VAVL
t
IL
RHRD440, RHRD460, RHRD440S, RHRD460S
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS P ATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
PACMAN™
POP™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART ST ART™
Star* Power™
Stealth™
FAST
FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
Rev. H
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
F ACT Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
UltraFET™
VCX™