Semiconductor Components Industries, LLC, 2004
July, 2004 − Rev. 3 1Publication Order Number:
BFR30LT1/D
BFR30LT1, BRF31LT1
JFET Amplifiers
NChannel
Features
Pb−Free Package is Available
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Rating
ÎÎÎÎ
ÎÎÎÎ
Symbol
ÎÎÎÎ
ÎÎÎÎ
Value
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
DrainSource Voltage
ÎÎÎÎ
ÎÎÎÎ
VDS
ÎÎÎÎ
ÎÎÎÎ
25
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
GateSource Voltage
ÎÎÎÎ
ÎÎÎÎ
VGS
ÎÎÎÎ
ÎÎÎÎ
25
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎ
ÎÎÎÎ
Symbol
ÎÎÎÎ
ÎÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎ
Total Device Dissipation (Note 1)
TA = 25°C
Derate above 25°C
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
PD
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
225
1.8
ÎÎÎ
Î
Î
Î
ÎÎÎ
mW
mW/°C
ÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance,
Junction−to−Ambient
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
RJA
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
556
ÎÎÎ
Î
Î
Î
ÎÎÎ
°C/W
ÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎ
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
PD
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
300
2.4
ÎÎÎ
Î
Î
Î
ÎÎÎ
mW
mW/°C
ÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance,
Junction−to−Ambient
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
RJA
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
417
ÎÎÎ
Î
Î
Î
ÎÎÎ
°C/W
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Junction and Storage Temperature
ÎÎÎÎ
ÎÎÎÎ
TJ, Tstg
ÎÎÎÎ
ÎÎÎÎ
55 to +150
ÎÎÎ
ÎÎÎ
°C
1. Device mounted on FR4 glass epoxy printed circuit board using the
recommended footprint.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
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Device Package Shipping
BFR30LT1 SOT−23 3000/Tape & Reel
SOT−23
CASE 318
STYLE 10
MARKING
DIAGRAM
ORDERING INFORMATION
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1 DRAIN
2 SOURCE
3
GATE
12
3
BFR30LT1G SOT−23
(Pb−Free) 3000/Tape & Reel
BFR31LT1 SOT−23 3000/Tape & Reel
1
MxM
x = 1 or 2
M = Date Code
BFR30LT1, BRF31LT1
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Gate Reverse Current (VGS = 10 Vdc, VDS = 0) IGSS 0.2 nAdc
Gate Source Cutoff Voltage (ID = 0.5 nAdc, VDS = 10 Vdc) BFR30
BFR31 VGS(OFF)
5.0
2.5 Vdc
Gate Source Voltage (ID = 1.0 mAdc, VDS = 10 Vdc) BFR30
BFR31
(ID = 50 Adc, VDS = 10 Vdc) BFR30
BFR31
VGS 0.7
3.0
1.3
4.0
2.0
Vdc
ON CHARACTERISTICS
ZeroGate−Voltage Drain Current (VDS = 10 Vdc, VGS = 0) BFR30
BFR31 IDSS 4.0
1.0 10
5.0 mAdc
SMALL−SIGNAL CHARACTERISTICS
Forward Transconductance
(ID = 1.0 mAdc, VDS = 10 Vdc, f = 1.0 kHz) BFR30
BFR31
(ID = 200 Adc, VDS = 10 Vdc, f = 1.0 kHz) BFR30
BFR31
yfs1.0
1.5
0.5
0.75
4.0
4.5
mAdc
Output Admittance
(ID = 1.0 mAdc, VDS = 10 Vdc, f = 1.0 kHz) BFR30
(ID = 200 Adc, VDS = 10 Vdc) BFR31
yos40
20 25
15
Adc
Input Capacitance (ID = 1.0 mAdc, VDS = 10 Vdc, f = 1.0 MHz)
(ID = 200 Adc, VDS = 10 Vdc, f = 1.0 MHz) Ciss
5.0
4.0 pF
Reverse Transfer Capacitance (ID = 1.0 mAdc, VDS = 10 Vdc, f = 1.0 MHz)
(ID = 200 Adc, VDS = 10 Vdc, f = 1.0 MHz) Crss
1.5
1.5 pF
TYPICAL CHARACTERISTICS
f, FREQUENCY (kHz)
Figure 1. Noise Figure versus Frequency
RS, SOURCE RESISTANCE (Megohms)
Figure 2. Noise Figure versus Source
Resistance
14
0.01
4
3
2
0
12
1
0.1 1.0 10 100
5
10
8
6
4
2
0
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
0.001 0.01 0.1 1.0 10
VDS = 15 V
VGS = 0
RS = 1 M
VDS = 15 V
VGS = 0
f = 1 kHz
BFR30LT1, BRF31LT1
http://onsemi.com
3
TYPICAL CHARACTERISTICS
VDS, DRAIN−SOURCE VOLTAGE (VOLTS)
Figure 3. Typical Drain Characteristics
VGS, GATE−SOURCE VOLTAGE (VOLTS)
Figure 4. Common Source Transfer
Characteristics
1.0
0.4
0.2
0
−1.2
0.8
0.6
0 5 10 15 20 25
0
0.6
0.4
0.2
0.8
1.2
1.0
−0.8 −0.4 0
1.2
, DRAIN CURRENT (mA)
D
I
, DRAIN CURRENT (mA)
D
I
VDS = 15 V
VGS = 0 V
−0.2 V
−0.4 V
−0.6 V
−0.8 V
−1.0 V
VGS(OFF) −1.2 V
VDS, DRAIN−SOURCE VOLTAGE (VOLTS)
Figure 5. Typical Drain Characteristics
VGS, GATE−SOURCE VOLTAGE (VOLTS)
Figure 6. Common Source Transfer
Characteristics
0
4
3
2
1
0−4
5
510152025
5
4
3
2
1
0
−5 −3 −2 −1 0
, DRAIN CURRENT (mA)
D
I
, DRAIN CURRENT (mA)
D
I
VDS = 15 V
VGS = 0 V
−2 V
−1 V
−3 V
VGS(OFF) −3.5 V
VGS(OFF) −3.5 V
VGS(OFF) −1.2 V
VDS, DRAIN−SOURCE VOLTAGE (VOLTS)
Figure 7. Typical Drain Characteristics
VGS, GATESOURCE VOLTAGE (VOLTS)
Figure 8. Common Source Transfer
Characteristics
0
10
4
2
0
−7
8
6
−6 −5 −4 −3 −2 −1
VDS = 15 V
VGS(OFF) −5.8 V
, DRAIN CURRENT (mA)
D
I
, DRAIN CURRENT (mA)
D
I
10
4
2
0
8
6
0 5 10 15 20 25
VGS(OFF) −5.8 V
VGS = 0 V
−1 V
−2 V
−3 V
−4 V
−5 V
Note: Graphical data is presented for dc conditions. Tabular data is given for pulsed conditions (Pulse Width = 630 ms, Duty Cycle = 10%).
Under dc conditions, self heating in higher IDSS units reduces IDSS.
BFR30LT1, BRF31LT1
http://onsemi.com
4
PACKAGE DIMENSIONS
SOT−23 (TO−236AB)
CASE 318−08
ISSUE AJ
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
DJ
K
L
A
C
BS
H
GV
3
12
DIM
AMIN MAX MIN MAX
MILLIMETERS
0.1102 0.1197 2.80 3.04
INCHES
B0.0472 0.0551 1.20 1.40
C0.0350 0.0440 0.89 1.11
D0.0150 0.0200 0.37 0.50
G0.0701 0.0807 1.78 2.04
H0.0005 0.0040 0.013 0.100
J0.0034 0.0070 0.085 0.177
K0.0140 0.0285 0.35 0.69
L0.0350 0.0401 0.89 1.02
S0.0830 0.1039 2.10 2.64
V0.0177 0.0236 0.45 0.60
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−03 AND −07 OBSOLETE, NEW STANDARD
318−08.
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
mm
inches
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
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