© Semiconductor Components Industries, LLC, 2016
February, 2019 Rev. 13
1Publication Order Number:
BAS21HT1/D
BAS21H
High Voltage
Switching Diode
Features
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Continuous Reverse Voltage VR250 V
Repetitive Peak Reverse Voltage VRRM 250 V
Peak Forward Current IF200 mA
Repetitive Peak Forward Current IFRM 500 mA
NonRepetitive Peak Forward Surge
Current, 60 Hz
IFSM(surge) 2.5 A
NonRepetitive Peak Forward Current
(Square Wave, TJ = 25°C prior to
surge)
t = 1 ms
t = 10 ms
t = 100 ms
t = 1 ms
t = 1 s
IFSM
20
20
10
4
1
A
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR5 Board,
(Note 1) TA = 25°C
Derate above 25°C
PD200
1.57
mW
mW/°C
Thermal Resistance,
JunctiontoAmbient
RqJA 635 °C/W
Junction and Storage Temperature
Range
TJ, Tstg 55 to
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR5 Minimum Pad
HIGH VOLTAGE
SWITCHING DIODE
Device Package Shipping
ORDERING INFORMATION
SOD323
CASE 477
STYLE 1
1
CATHODE
2
ANODE
www.onsemi.com
MARKING
DIAGRAM
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
BAS21HT1G,
NSVBAS21HT1G
SOD323
(PbFree) 3000 / Tape & Reel
JS M G
G
1
2
JS = Device Code
M = Date Code*
G= PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
BAS21HT3G,
NSVBAS21HT3G
SOD323
(PbFree)
10000 / Tape &
Reel
BAS21H
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 200 Vdc)
(VR = 200 Vdc, TJ = 150°C)
IR
0.1
100
mAdc
Reverse Breakdown Voltage
(IBR = 100 mAdc)
V(BR) 250 Vdc
Forward Voltage
(IF = 100 mAdc)
(IF = 200 mAdc)
VF
1000
1250
mV
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CD5.0 pF
Reverse Recovery Time
(IF = IR = 30 mAdc, RL = 100 W)
trr 50 ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 30 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA.
Notes: 3. tp » trr
+10 V 2.0 k
820 W
0.1 mF
D.U.T.
VR
100 mH
0.1 mF
50 W OUTPUT
PULSE
GENERATOR
50 W INPUT
SAMPLING
OSCILLOSCOPE
trtpt
10%
90%
IF
IR
trr t
iR(REC) = 3.0 mA
OUTPUT PULSE
(IF = IR = 30 mA; MEASURED
at iR(REC) = 3.0 mA)
IF
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
BAS21H
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3
TYPICAL CHARACTERISTICS
Figure 2. Forward Voltage Figure 3. Reverse Leakage
FORWARD CURRENT (mA)
7000
REVERSE CURRENT (nA)
REVERSE VOLTAGE (V)
5000
3000
5
0
21
6000
4000
6
5 10 20 50 100 200
1
2
3
4
TA = 55°C
300
TA = 155°C
TA = 25°C
TA = 55°C
1 10 100 1000
1
200
400
600
800
1000
1200
FORWARD VOLTAGE (mV)
155°C
25°C
Figure 4. Diode Capacitance
VR, REVERSE VOLTAGE (V)
6543210
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Cd, DIODE CAPACITANCE (pF)
87
Figure 5. Maximum Nonrepetitive Peak
Forward Current as a Function of Pulse
Duration, Typical Values
Tp (mSec)
10.10.010.001
0
5
10
15
20
25
IFSM (A)
10
Based on square wave currents
TJ = 25°C prior to surge
BAS21H
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4
PACKAGE DIMENSIONS
SOD323
CASE 47702
ISSUE H
1.60
0.063
0.63
0.025
0.83
0.033
2.85
0.112
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
STYLE 1:
PIN 1. CATHODE
2. ANODE
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING
WITH SOLDER PLATING.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
5. DIMENSION L IS MEASURED FROM END OF RADIUS.
NOTE 3
D
12bE
A3
A1
A
CNOTE 5
L
HE
DIM MIN NOM MAX
MILLIMETERS
A0.80 0.90 1.00
A1 0.00 0.05 0.10
A3 0.15 REF
b0.25 0.32 0.4
C0.089 0.12 0.177
D1.60 1.70 1.80
E1.15 1.25 1.35
0.08
2.30 2.50 2.70
L
0.031 0.035 0.040
0.000 0.002 0.004
0.006 REF
0.010 0.012 0.016
0.003 0.005 0.007
0.062 0.066 0.070
0.045 0.049 0.053
0.003
0.090 0.098 0.105
MIN NOM MAX
INCHES
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Phone: 421 33 790 2910
BAS21HT1/D
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