G E SOLTD STATE Optoelectronic Specifications uu pe 3075081 ooLabso i T-4(-33 Photon Coupled Isolator 4N38 , 4N38A [ micumerens [mens ecae eae . oMIN, | MAX | MIN. | MAX, NOTES Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor a base tase) a0 | aso The GE Solid State 4N38 and 4N38A consist of a gallium arsenide infrared ae an ier | 300 FEE emitting diode coupled with a silicon phototransistor in a dual in-line 7 ey __ | 9 40s | 508 | 016 | 020 : . : + ' a 18 - | SOB - 200 3 package. These devices are also available in surface-mount packaging. ! F 101 [| 478 | 040 | 070 ro--4 c iTOP VIEW)| S$ G i 22a 3 280 | 090 110 \ 6 SeaTiNG so} |] u |} Smt 218! og | 28) 4 FEATURES: ot ie s pects ena cf ae | | Soo e Fast switching speeds ; sof. Palos Ae Joe FE x aa, eo i High DC current transfer ratio 9 b- -7 1 te P ~ 'osa | - | 37 . : : . 8 p AR ze2 | 343 | 115 135 e High isolation resistance M | s 610 | s86 | 20 | 270 e 2500 volts isolation voltage i NOTES. 1 INSTALLED POSITION LEAD CENTERS I/O compatible with integrated circuits age 2 OVERALL INSTALLED DIMENSION, 3 Covered under U.L. component recognition program, reference file E51868 3 THESE MEASUREMENTS ARE MADE FROM THE fIndicates JEDEC registered values SEATING PLANE. absolute maximum ratings: (25C) (unless otherwise specified) 4 FOUR PLACES Storage Temperature -55 to 150C. Operating Temperature -55 to 100C, Lead Soldering Time (at 260C) 10 seconds. INFRARED EMITTING DIODE PHOTO-TRANSISTOR Power Dissipation *150 milliwatts +Power Dissipation **150 = milliwatts + Forward Current (Continuous) 80 milliamps TVcEO 80 volts ~ +Forward Current (Peak) 3 ampere tVcro 80 volts (Pulse width 300usec, 2% duty cycle) TVEco 7 volts Reverse Voltage 3 volts Collector Current (Continuous) 100 milliamps *Derate 2.0 mW/C above 25C ambient, **Derate 2.0 mW/C above 25C ambient. +Total device dissipation @ Ta = 25 C. Pp 250 mW. Derate 3.3 mW/C above 25 C ambient. individual electrical characteristics (25C) INFRARED EMITTING TYP, | MAX. UNITS PHOTO-TRANSISTOR MIN.|} TYP.) MAX, UNITS 1ODE {Forward Voltage 1.2 | 1.5 | volts {Breakdown Voltage ViprycEO 80 - |volts (Ip = 10mA) (ic = LmA, Ip =O) +Breakdown Voltage Vipr)cBo 80 - volts (Ic = 118A, Ip = 0) + Reverse Current - 100 | microamps || Breakdown Voltage Vipr)yECO 7 - jvolts (Vp = 3V) . (ig = 100uA, Ig = 0) +Collector Dark Current IcEo - - 50 |nanoamps (Vce = 60V, Ip = 0) Capacitance 50 - picofarads |} tCollector Dark Current Icpo | | 20 |nanoamps ! V=0,f=1 MHz (Voce = 60V, Ip = Q) coupled electrical characteristics (25C) MIN. | TYP. | MAX. UNITS Isolation Voltage 60Hz with the input terminals (diode) 4N38 11500 - - volts (peak) shorted together and the output terminals (transistor) 4N38A [25004 - volts (peak) shorted together. 4N38A {1775 |) - volts (RMS) (1 sec.) {Saturation Voltage Collector Emitter (lp = 20mA, Ic = 4mA) - - 1.0 | volts Resistance IRED to Photo-Transistor (@ 500 volts) - 100 | gigaohms Capacitance IRED to Photo-Transistor (@ 0 volts, f= 1 MHz) - 1 | picofarad DC Current Transfer Ratio (Ip = 10mA, Vcr = 10V) 10 - |% Switching Speeds (Vcg = 10V, Ic, = 2mA, Ry = 100) Turn-On Time ton - 5 | microseconds Turn-Off Time torr - 5 - microseconds VDE Approved to 0883/6.80 01 [0b Certificate # 35025, except type 4N38A 204 4N38, 4N38A G E SOLID STATE 01 pe Wf 3a7s081 OO19661 4 IT TYPICAL CHARACTERISTICS _ 2 o 2 NORMALIZED TO; Voge = 10 VOLTS ip =10mMA Fpe=1Ma Icen NORMALIZED OUTPUT CURRENT 2 9 2 10 100 ip - INPUT CURRENT ~ mA 1 1, OUTPUT CURRENT VS INPUT CURRENT 3 ipo FORWARD CURRENT- mA o Ve-VOLTS Vp- FORWARD VOLTAGE - VOLTS 3. INPUT CHARACTERISTICS NORMALIZED = 200 ip =o Rge=1 Ma =25'C lcen- NORMALIZED DARK CURRENT 50 Ta - AMBIENT TEMPERATURE ~C 5. NORMALIZED DARK CURRENT VS TEMPERATURE ICER NORMALIZED OUTPUT CURRENT o a Ta - AMBIENT TEMPERATURE ~ C 2, OUTPUT CURRENT VS TEMPERATURE = 3 IceR - NORMALIZED OUTPUT CURRENT 9 Veg = 10 VOLTS =10mA 0.01 arma 0.01 1 10 1000 Yor - COLLECTOR TO EMITTER - VOLTS 4, OUTPUT CHARACTERISTICS You = 10 tp =20mA =10 tepo- COLLECTOR BASE CURRENT - 2A Ta - AMBIENT TEMPERATURE IN C Optoelectronic Specifications T' 4-83 NORMALIZED TO: 6. COLLECTOR BASE CURRENT VS TEMPERATURE 205 IE.