Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )
Symbol Parameter Condition Ratings Units
VDRM Repetitive Peak Off-State Voltage 600 V
IT(RMS) R.M.S On-State Current TC = 100°C 16 A
ITSM Surge On-State Current One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive 145/155 A
I2tI2t for fusing t =10ms 105 A2s
PGM Peak Gate Power Dissipation 5.0 W
PG(AV) Average Gate Power Dissipation Over any 20ms period 0.5 W
IGM Peak Gate Current 2.0 A
VGM Peak Gate Voltage 10 V
TJOperating Junction Temperature - 40 ~ 125 °C
TSTG Storage Temperature - 40 ~ 150 °C
Mass 2.0 g
Nov, 2003. Rev. 0
Features
◆ Repetitive Peak Off-State Voltage : 600V
◆ R.M.S On-Sta te Current ( IT(RMS)= 16 A )
◆ High Commutation dv/dt
◆ Isolation Voltage ( VISO = 1500V AC )
General Description
This device is suitable for AC switching application, phase
control application such as fan speed and temperature mod-
ulation control, lighting control and static switching relay.
2.T2
3.Gate
1.T1
Symbol
○
○
○
▼
▲
1/6
BT139-600
SemiWell Semiconductor
Bi-Directional Triode Thyristor
copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
UL : E228720
Preliminary
TO-220
123
Electrical Characteristics
Symbol Items Conditions
Ratings
Unit
Min. Typ. Max.
IDRM Repetitive Peak Off-State
Current VD = VDRM, Single Phase, Half Wave
TJ = 125 °C ──
2.0 mA
VTM Peak On-State Voltage IT = 20 A, Inst. Measurement ──1.6 V
I+GT1 Ⅰ
Gate Trigger Current VD = 6 V, RL=10 Ω
──
25
mA
I -GT1 Ⅱ──
25
I -GT3 Ⅲ──
25
I+GT3 Ⅳ──
100
V+GT1 Ⅰ
Gate Trigger Voltage VD = 6 V, RL=10 Ω
──
1.5
V
V-GT1 Ⅱ──
1.5
V-GT3 Ⅲ──
1.5
V+GT3 Ⅳ──
2.0
VGD Non-Trigger Gate Voltage TJ = 125 °C, VD = 1/2 VDRM 0.2 ── V
(dv/dt)c Critical Rate of Rise Off-State
Voltage at Commutation TJ = 125 °C, [di/dt]c = -6.0 A/ms,
VD=2/3 VDRM 10 ──
V/㎲
IHHolding Current ─20 ─mA
Rth(j-c) Thermal Impedance Junction to case ──
1.2 °C/W
BT139-600
2/6
-50 0 50 100 150
0.1
1
10
VGT (t oC)
VGT (25 oC)
Junction Temperature [ oC]
100101102
0
50
100
150
200
60Hz
50Hz
Surge On-State Current [A]
Time (cycles)
048121620
95
100
105
110
115
120
125
130
θ= 90
o
θ= 150
o
θ= 60
o
θ= 30
o
θ= 180
o
θ= 120
o
Allowable Case Temperature [ oC]
RMS On-State Current [A]
02468101214161820
0
5
10
15
20
25
θ= 90
o
θ= 150
o
θ= 60
o
θ= 30
o
θ= 180
o
θ= 120
o
Power Dissipation [W]
R MS O n - S ta te Curre n t [A]
0.5 1.0 1.5 2.0 2.5 3.0 3.5
100
101
102
TJ = 125 oC
TJ = 25 oC
On-State Current [A]
O n -State Volta g e [V]
101102103
10-1
100
101
VGD (0.2V)
IGM (2A)
25 ℃
PG(AV) (0.5W)
PGM (5W)
VGM (10V)
Gate Voltage [V]
Gate C u rrent [m A]
3/6
Fig 1. Gate Characteristics Fig 2. On-State Voltage
Fig 3. On State Current vs.
Maximum Power Dissipation
Fig 4. On State Current vs.
Allowable Case Temperature
Fig 5. Surge On-State Current Rating
( Non-Repetitive )
Fig 6. Gate Trigger Voltage vs.
Junction Temperature
θ
θ
2
π
360°
π
θ
: Conduction Angle
θ
θ
2
π
360°
π
θ
: Conduction Angle
BT139-600
-50 0 50 100 150
0.1
1
10
I +
GT3
I _
GT3
I +
GT1
I _
GT1
IGT (t oC)
IGT (25 oC)
Junction Temperature [ oC]
10-3 10-2 10-1 100101
0.01
0.1
1
10
Transient Thermal Impedance [ oC/W]
Time (sec)
4/6
Fig 8. Transient Thermal Impedance
Fig 7. Gate Trigger Current vs.
Junction Temperature
Fig 9. Gate Trigger Characteristics Test Circuit
BT139-600
▼
▲A
V
10Ω
6V RG
●
●
▼
▲A
V
10Ω
6V RG
●
●
▼
▲A
V
10Ω
6V RG
●
●
Test Procedure ⅠTest Procedure ⅡTest Procedure Ⅲ
▼▲ A
V
10Ω
6V RG
●
●
Test Procedure Ⅳ
Dim. mm Inch
Min. Typ. Max. Min. Typ. Max.
A 9.7 10.1 0.382 0.398
B 6.3 6.7 0.248 0.264
C 9.0 9.47 0.354 0.373
D 12.8 13.3 0.504 0.524
E 1.2 1.4 0.047 0.055
F 1.7 0.067
G 2.5 0.098
H 3.0 3.4 0.118 0.134
I 1.25 1.4 0.049 0.055
J 2.4 2.7 0.094 0.106
K 5.0 5.15 0.197 0.203
L 2.2 2.6 0.087 0.102
M 1.25 1.55 0.049 0.061
N 0.45 0.6 0.018 0.024
O 0.6 1.0 0.024 0.039
φ
3.6 0.142
TO-220 Package Dimension
5/6
BT139-600
1. T1
2. T2
3. Gate
A
B
C
I
GL
1
M
E
F
φ
H
K
NO
2
3
J
D
