BAS28,215 - NXP - Datasheet.Directory

1. Product profile

1.1 General description

Two high-speed switching diodes fabricated in planar te chnology, and encapsulated in a

small SOT143B Surface-Mounted Device (SMD) plastic package. The diodes are not

connected.

1.2 Features and benefits

High switching speed: trr ≤4ns

Reverse voltage: VR≤75 V

Repetitive peak reverse voltage: VRRM ≤85 V

Repetitive peak forward current: IFRM ≤500 mA

AEC-Q101 qualified

Small SMD package

1.3 Applications

High-speed switching in e.g. surface-mounted circuits

1.4 Quick reference data

[1] Device mounted on an FR4 Printed-Circuit Board (PCB).

[2] When switched from IF= 10 mA to IR=10mA; R

L= 100 Ω; measured at IR=1mA.

BAS28

High-speed double diode

Rev. 3 — 22 July 2010 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per diode

IFforward current [1] --215mA

IRreverse current VR=75V - - 1 μA

VRreverse voltage - - 75 V

trr reverse recovery time [2] --4ns

Product data sheet Rev. 3 — 22 July 2010 2 of 12

NXP Semiconductors BAS28

High-speed double diode

2. Pinning information

3. Ordering information

4. Marking

[1] * = -: made in Hong Kong

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

1 cathode (diode 1)

2 cathode (diode 2)

3 anode (diode 2)

4 anode (diode 1)

006aab10

Table 3. Ordering i nformation

Type number Package

Name Description Version

BAS28 - plastic surface-mounted package; 4 leads SOT143B

Table 4. Marking codes

Type number Marking code[1]

BAS28 JT*

Product data sheet Rev. 3 — 22 July 2010 3 of 12

NXP Semiconductors BAS28

High-speed double diode

5. Limiting values

[1] Device mounted on an FR4 PCB.

[2] One diode loaded.

[3] Tj=25°C prior to surge.

6. Thermal characteristics

[1] Device mounted on an FR4 PCB.

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per diode

VRRM repetitive peak

reverse voltage -85V

VRreverse voltage - 75 V

IFforward current [1] -215mA

IFRM repetitive peak

forward current -500mA

IFSM non-repetitive peak

forward current square wave [3]

tp=1μs-4A

tp=1ms - 1 A

tp=1s - 0.5 A

Per device

Ptot total power dissipation Tamb =25°C[1][2] -250mW

Tjjunction temperature - 150 °C

Tstg storage temperature −65 +150 °C

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Per device; one diode loaded

Rth(j-a) thermal resistance from

junction to ambient in free air [1] - - 500 K/W

Rth(j-t) thermal resistance from

junction to tie-point - - 360 K/W

Product data sheet Rev. 3 — 22 July 2010 4 of 12

NXP Semiconductors BAS28

High-speed double diode

7. Characteristics

[1] When switched from IF= 10 mA to IR=10mA; R

L= 100 Ω; measured at IR=1mA.

[2] When switched from IF=10mA; t

r=20ns.

Table 7. Characteristics

Tamb =25

C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

Per diode

VFforward voltage IF= 1 mA - - 715 mV

IF= 10 mA - - 855 mV

IF=50mA --1V

IF=150mA --1.25V

IRreverse current VR=25V --30nA

VR=75V --1μA

VR=25V; T

j=150°C --30μA

VR=75V; T

j=150°C --50μA

Cddiode capacitance f = 1 MHz; VR=0V --1.5pF

trr reverse recovery time [1] --4ns

VFR forward recovery voltage [2] --1.75V

(1) Tj= 150 °C; typical values

(2) Tj=25°C; typical values

(3) Tj=25°C; maximum values

Based on square wave currents.

Tj=25°C; prior to surge

Fig 1. Forward current as a function of forward

voltage Fig 2. No n-repetitive peak forwa rd current as a

function of pulse duration; maximu m values

300

(mA)

100

200

mbg382

1VF (V)

(1) (2) (3)

mbg704

102

IFSM

(A)

10−1

tp (μs)

110

103

10 102

Product data sheet Rev. 3 — 22 July 2010 5 of 12

NXP Semiconductors BAS28

High-speed double diode

VR=V

Rmax

(1) VR= 75 V; maximum values

(2) VR= 75 V; typical values

(3) VR= 25 V; typical values

f=1MHz; T

j=25°C

Fig 3. Reverse current as a function of junction

temperature Fig 4. Diode capacitan ce as a function of reverse

voltage; typical values

Fig 5. Forward current as a function of ambient temperature; derating curve

105

104

10 200

mga884

100 Tj (°C)

(nA)

103

102

(2)

(1)

(3)

0816124

0.8

0.6

0.4

0.2

mbg446

(V)

(pF)

0 50 100 200

250

200

msa562

150

100

(mA)

Tamb (°C)

Product data sheet Rev. 3 — 22 July 2010 6 of 12

NXP Semiconductors BAS28

High-speed double diode

8. Test information

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council

(AEC) standard Q101 - Stress test qualifica tion for discrete semiconductors, and is

suitable for use in auto motive applications.

(1) IR=1mA

Fig 6. Re verse recovery time test circuit and waveforms

Fig 7. F orward recovery voltage test circuit and waveforms

trr

(1)

+ I

output signal

10 %

90 %

input signal

V = V

= 50 ΩI

D.U.T.

= 50 Ω

SAMPLING

OSCILLOSCOPE

mga881

10 %

90 %

input signal

= 50 Ω

OSCILLOSCOPE

1 kΩ450 Ω

D.U.T.

mga88

VFR

output signal

Product data sheet Rev. 3 — 22 July 2010 7 of 12

NXP Semiconductors BAS28

High-speed double diode

9. Package outline

10. Packing information

[1] For further information and the availability of packing methods, see Section 14.

Fig 8. Package outline BAS28 (SOT143B)

04-11-16Dimensions in mm

3.0

2.8 1.1

0.9

2.5

2.1

1.4

1.2

1.7

1.9

0.48

0.38

0.15

0.09

0.45

0.15

0.88

0.78

Table 8. Packing methods

The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]

Type number Package Description Packing quantity

3000 10000

BAS28 SOT143B 4 mm pitch, 8 mm tape and reel -215 -235

Product data sheet Rev. 3 — 22 July 2010 8 of 12

NXP Semiconductors BAS28

High-speed double diode

11. Soldering

Fig 9. Reflow soldering footprint BAS28 (SOT143B)

Fig 10. Wave soldering footprint BAS28 (SOT143B)

solder lands

solder resist

occupied area

solder paste

sot143b_

0.9

0.60.7

3.25

0.6

(3×)

0.6

(3×)

0.5

(3×)

0.7

(3×)

1.9

0.75 0.95

Dimensions in mm

solder lands

solder resist

occupied area

preferred transport direction during soldering

sot143b_

4.6

4.45

1.2

(3×)

1.425

(3×)

1.425

1.2

2.2

2.575

Dimensions in mm

Product data sheet Rev. 3 — 22 July 2010 9 of 12

NXP Semiconductors BAS28

High-speed double diode

12. Revision history

Table 9. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BAS28 v.3 20100722 Product data sheet - BAS28_2

Modifications: •The format of this data sheet has been redesigned to comply with the new identity

guidelines of NXP Semiconductors.

•Legal texts have been adapted to the new company name where appropriate .

•Section 1.1 “General description”: amended

•Section 4 “Marking”: updated

•Table 1 “Quick reference data”: added

•Section 8 “Test information”: added

•Figure 8: superseded by minimized package outline drawing

•Section 10 “Packing information”: added

•Section 11 “Soldering”: added

•Section 13 “Legal information”: updated

BAS28_2 19960910 Product specification - BAS28_1

BAS28_1 19960403 Product specification - -

Product data sheet Rev. 3 — 22 July 2010 10 of 12

NXP Semiconductors BAS28

High-speed double diode

13. Legal information

13.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

13.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not b e relied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semicond uctors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall pre va il.

Product specificat io n — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to off er functions and qualities beyond those described in the

Product data sheet.

13.3 Disclaimers

Limited warr a nty and liability — Information in this document is believed to

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representations or warrant ies, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information.

In no event shall NXP Semiconductors be liable for any indirect, incidenta l ,

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profits, lost savings, business interruption, costs related to the removal or

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Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ ag gregate and cumulative l iability towards

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of NXP Semiconductors.

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changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

to the publication hereof .

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authorized or warranted to be suit able for use in life support, life-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors pro duct can reasonably be expected

to result in perso nal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of

NXP Semiconductors products in such equipment or application s and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

accepts no liability for any assistance with applications or customer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suit able and fit for the custome r’s applications and

products planned, as well as fo r the planned application and use of

customer’s third party customer(s). Custo mers should provide appropriate

design and operating safeguards to minimize the risks associate d with t heir

applications and products.

NXP Semiconductors does not accept any liabil ity related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party custo m er(s). Customer is responsible for doing all necessary

testing for the customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by cust omer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individua l agreement. In case an individual

agreement is concluded only the ter m s and conditions of the respective

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing i n this document may be interpreted or

construed as an of fer t o sell product s that is open for accept ance or the gr ant,

conveyance or implication of any license under any copyrights, patents or

other industrial or inte llectual property right s.

Export control — This document as well as the item(s) described herein

may be subject to export control regulatio ns. Export might require a prior

authorization from national authorities.

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contain s data from the objective specification for product development .

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specificat ion.

Product [short] data sheet Production This document contains the product specification.

Product data sheet Rev. 3 — 22 July 2010 11 of 12

NXP Semiconductors BAS28

High-speed double diode

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

13.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respective ow ners.

14. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors BAS28

High-speed double diode

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 22 July 2010

Document identifier: BAS28

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

15. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6

8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 6

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7

10 Packing information . . . . . . . . . . . . . . . . . . . . . 7

11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10

13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 10

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11

14 Contact information. . . . . . . . . . . . . . . . . . . . . 11

15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12