VNB14NV04, VND14NV04 VND14NV04-1, VNS14NV04 "OMNIFET II" fully autoprotected Power MOSFET Features TYPE RDS(on) VNB14NV04 VND14NV04 VND14NV04-1 VNS14NV04 Ilim 3 Vclamp 1 TO-252 (DPAK) 35 m 12 A 3 2 1 TO-251 (IPAK) 40 V 3 1 SO-8 Linear current limitation Thermal shutdown Short circuit protection Integrated clamp Low current drawn from input pin Diagnostic feedback through input pin ESD protection Direct access to the gate of the Power MOSFET (analog driving) Compatible with standard Power MOSFET D2PAK Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPowerTM M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin. Table 1. Device summary Package Tube Tube (lead free) Tape and reel Tape and reel (lead free) D2PAK VNB14NV04 VNB14NV04-E VNB14NV0413TR VNB14NV04TR-E TO-252 (DPAK) VND14NV04 VND14NV04-E VND14NV0413TR VND14NV04TR-E TO-251 (IPAK) VND14NV04-1 VND14NV04-1-E - - SO-8 VNS14NV04 - - - April 2010 Doc ID 7393 Rev 8 1/31 www.st.com 1 Contents VNB14NV04, VND14NV04, VND14NV04-1, VNS14NV04 Contents 1 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2 Electrical specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.1 Absolute maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2.3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 Protection features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 5 6 2/31 4.1 DPAK thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 4.2 SO-8 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 4.3 D2PAK thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 5.1 ECOPACK(R) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 5.2 TO-251 (IPAK) mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 5.3 D2PAK mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 5.4 TO-252 (DPAK) mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 5.5 SO-8 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 Doc ID 7393 Rev 8 VNB14NV04, VND14NV04, VND14NV04-1, VNS14NV04 List of tables List of tables Table 1. Table 2. Table 3. Table 4. Table 5. Table 6. Table 7. Table 8. Table 9. Table 10. Table 11. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Absolute maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 DPAK thermal parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 D2PAK thermal parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 TO-251 (IPAK) mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 D2PAK mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 TO-252 (DPAK) mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 SO-8 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 Doc ID 7393 Rev 8 3/31 List of figures VNB14NV04, VND14NV04, VND14NV04-1, VNS14NV04 List of figures Figure 1. Figure 2. Figure 3. Figure 4. Figure 5. Figure 6. Figure 7. Figure 8. Figure 9. Figure 10. Figure 11. Figure 12. Figure 13. Figure 14. Figure 15. Figure 16. Figure 17. Figure 18. Figure 19. Figure 20. Figure 21. Figure 22. Figure 23. Figure 24. Figure 25. Figure 26. Figure 27. Figure 28. Figure 29. Figure 30. Figure 31. Figure 32. Figure 33. Figure 34. Figure 35. Figure 36. Figure 37. Figure 38. Figure 39. Figure 40. Figure 41. Figure 42. Figure 43. Figure 44. Figure 45. Figure 46. 4/31 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Current and voltage conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Switching time test circuit for resistive load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Test circuit for diode recovery times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Unclamped inductive load test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Unclamped inductive waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Input charge test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Source-drain diode forward characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Static drain source on resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Derating curve . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Static drain-source on resistance vs. input voltage (part 1/2) . . . . . . . . . . . . . . . . . . . . . . . 12 Static drain-source on resistance vs. input voltage (part 2/2) . . . . . . . . . . . . . . . . . . . . . . . 12 Transconductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Static drain-source on resistance vs. id . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Transfer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Turn-on current slope (part 1/2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Turn-on current slope (part 2/2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Input voltage vs. input charge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Turn-off drain source voltage slope (part 1/2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Turn-off drain source voltage slope (part 2/2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Capacitance variations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Switching time resistive load (part 1/2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Switching time resistive load (part 2/2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Output characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Normalized on resistance vs. temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Normalized input threshold voltage vs. temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Current limit vs. junction temperatures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Step response current limit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 DPAK maximum turn-off current versus load inductance . . . . . . . . . . . . . . . . . . . . . . . . . . 16 DPAK demagnetization. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 D2PAK maximum turn-off current versus load inductance . . . . . . . . . . . . . . . . . . . . . . . . . 17 D2PAK demagnetization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 DPAK PC board(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 DPAK Rthj-amb vs PCB copper area in open box free air condition. . . . . . . . . . . . . . . . . . . 18 DPAK thermal impedance junction ambient single pulse . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Thermal fitting model of an OMNIFET II in DPAK. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 SO-8 PC board(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 SO-8 Rthj-amb vs PCB copper area in open box free air condition . . . . . . . . . . . . . . . . . . . 20 D2PAK PC board(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 D2PAK Rthj-amb vs PCB copper area in open box free air condition . . . . . . . . . . . . . . . . . . 21 D2PAK thermal impedance junction ambient single pulse . . . . . . . . . . . . . . . . . . . . . . . . . 22 Thermal fitting model of an OMNIFET II in D2PAK . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 TO-251 (IPAK) package dimension . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 D2PAK package dimension . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 TO-252 (DPAK) package dimension . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 SO-8 package dimension . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Doc ID 7393 Rev 8 VNB14NV04, VND14NV04, VND14NV04-1, VNS14NV04 1 Block diagram Block diagram Figure 1. Block diagram Doc ID 7393 Rev 8 5/31 Electrical specification 2 VNB14NV04, VND14NV04, VND14NV04-1, VNS14NV04 Electrical specification Figure 2. Current and voltage conventions 2.1 Absolute maximum rating Table 2. Absolute maximum rating Value Symbol Parameter SO-8 IPAK D2PAK Unit VDS Drain-source voltage (VIN=0 V) Internally clamped V VIN Input voltage Internally clamped V IIN Input current +/-20 mA 10 Internally limited A -15 A RIN MIN Minimum input series impedance ID Drain current IR Reverse DC output current VESD1 Electrostatic discharge (R=1.5 K, C=100 pF) 4000 V VESD2 Electrostatic discharge on output pin only (R=330 , C=150 pF) 16500 V Ptot EMAX Total dissipation at Tc=25 C 4.6 Maximum switching energy (L=0.4 mH; RL=0 ; Vbat=13.5 V; Tjstart=150 C; IL=18 A) 74 74 93 74 W 93 mJ Tj Operating junction temperature Internally limited C Tc Case operating temperature Internally limited C -55 to 150 C Tstg 6/31 DPAK Storage temperature Doc ID 7393 Rev 8 VNB14NV04, VND14NV04, VND14NV04-1, VNS14NV04 2.2 Thermal data Table 3. Thermal data Electrical specification Value Symbol Parameter SO-8 Rthj-case Thermal resistance junction-case max Rthj-lead Thermal resistance junction-lead max Rthj-amb DPAK IPAK D2PAK 1.7 1.7 1.7 C/W 27 Thermal resistance junction-ambient max (1) 90 Unit C/W (1) 65 102 52 (1) C/W 1. When mounted on a standard single-sided FR4 board with 0.5 cm2 of Cu (at least 35 m thick) connected to all DRAIN pins. Horizontal mounting and no artificial air flow. 2.3 Electrical characteristics -40 < Tj < 150 C unless otherwise specified. Table 4. Electrical characteristics Symbol Parameter Test Conditions Min Typ Max Unit VIN=0 V; ID=7 A 40 45 55 V Off VCLAMP Drain-source clamp voltage VCLTH Drain-source clamp threshold voltage VIN=0 V; ID=2 mA 36 VINTH Input threshold voltage VDS=VIN; ID=1 mA 0.5 Supply current from input pin VDS=0 V; VIN=5 V VINCL Input-source clamp voltage IIN=1 mA IIN=-1 mA IDSS Zero input voltage drain current (VIN=0 V) Static drain-source on resistance IISS V 2.5 V 100 150 A 6.8 8 -0.3 V VDS=13 V; VIN=0 V; Tj=25 C VDS=25 V; VIN=0 V 30 75 A Vin = 5 V ID = 7 A Tj = 25 C Vin = 5 V ID = 7 A 35 70 m 6 -1.0 On RDS(on) Dynamic (Tj=25C, unless otherwise specified) gfs (1) Forward transconductance VDD = 13 V ID = 7 A 18 S Coss Output capacitance VDS = 13 V f = 1 MHz VIN = 0 V 400 pF Switching td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time VDD = 15 V ID = 7 A Vgen = 5 V Rgen = RIN MIN =10 (see Figure 3) Fall time Doc ID 7393 Rev 8 80 250 ns 350 1000 ns 450 1350 ns 150 500 ns 7/31 Electrical specification Table 4. Electrical characteristics (continued) Symbol td(on) tr td(off) tf VNB14NV04, VND14NV04, VND14NV04-1, VNS14NV04 Parameter Test Conditions Min Turn-on delay time Rise time Turn-off delay time VDD = 15 V Id = 7 A Vgen = 5 V Rgen = 2.2 K (see Figure 3) Fall time (di/dt)on Turn-on current slope Typ Max Unit 1.5 4.5 s 9.7 30.0 s 25.0 s 30.0 s 10.2 VDD = 15 V ID = 7 A Vgen = 5 V Rgen = RIN MIN =10 16 A/s VDD = 12 V ID = 7 A Vin = 5 V; Igen = 2.13 mA (see Figure 7) 36.8 nC Forward on voltage ISD = 7 A Vin = 0 V 0.8 V trr Reverse recovery time 300 ns Qrr Reverse recovery charge 0.8 C IRRM Reverse recovery current ISD = 7 A; di/dt = 40 A/s VDD = 30 V L = 200 H (see test circuit, Figure 4) 5 A Qi Total input charge Source drain diode VSD(1) Protection Ilim Drain current limit VIN = 5 V; VDS = 13 V tdlim Step response current limit VIN = 5 V; VDS = 13 V Tjsh Over temperature shutdown 150 Tjrs Over temperature reset 135 Igf Fault sink current VIN = 5 V; VDS = 13 V; Tj = Tjsh 10 Single pulse avalanche energy starting Tj = 25 C; VDD = 24 V VIN = 5 V; Rgen = RIN MIN = 10 ; L = 24 mH (see Figure 5 and Figure 6) 400 Eas 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 % 8/31 Doc ID 7393 Rev 8 12 18 24 45 175 A s 200 C C 15 20 mA mJ VNB14NV04, VND14NV04, VND14NV04-1, VNS14NV04 3 Protection features Protection features During normal operation, the input pin is electrically connected to the gate of the internal power MOSFET through a low impedance path. The device then behaves like a standard power MOSFET and can be used as a switch from DC up to 50 KHz. The only difference from the user's standpoint is that a small DC current IISS (typ. 100 A) flows into the input pin in order to supply the internal circuitry. The device integrates: Overvoltage clamp protection: internally set at 45 V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability. This feature is mainly important when driving inductive loads. Linear current limiter circuit: limits the drain current ID to Ilim whatever the input pin voltages. When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the over temperature threshold Tjsh. Over temperature and short circuit protection: these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Over temperature cutout occurs in the range 150 to 190 C, a typical value being 170 C. The device is automatically restarted when the chip temperature falls of about 15 C below shutdown temperature. Status feedback: in the case of an over temperature fault condition (Tj > Tjsh), the device tries to sink a diagnostic current Igf through the input pin in order to indicate fault condition. If driven from a low impedance source, this current may be used in order to warn the control circuit of a device shutdown. If the drive impedance is high enough so that the input pin driver is not able to supply the current Igf, the input pin will fall to 0 V. This will not however affect the device operation: no requirement is put on the current capability of the input pin driver except to be able to supply the normal operation drive current IISS. Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit. Doc ID 7393 Rev 8 9/31 Protection features 10/31 VNB14NV04, VND14NV04, VND14NV04-1, VNS14NV04 Figure 3. Switching time test circuit for resistive load Figure 4. Test circuit for diode recovery times Doc ID 7393 Rev 8 VNB14NV04, VND14NV04, VND14NV04-1, VNS14NV04 Figure 5. Unclamped inductive load test circuits Figure 7. Input charge test circuit Figure 6. Doc ID 7393 Rev 8 Protection features Unclamped inductive waveforms 11/31 Protection features Figure 8. VNB14NV04, VND14NV04, VND14NV04-1, VNS14NV04 Figure 9. Static drain source on resistance Figure 10. Derating curve Figure 11. Static drain-source on resistance vs. input voltage (part 1/2) Figure 12. Static drain-source on resistance vs. input voltage (part 2/2) Figure 13. Transconductance 12/31 Source-drain diode forward characteristics Doc ID 7393 Rev 8 VNB14NV04, VND14NV04, VND14NV04-1, VNS14NV04 Protection features Figure 14. Static drain-source on resistance vs. id Figure 15. Transfer characteristics Figure 16. Turn-on current slope (part 1/2) Figure 17. Turn-on current slope (part 2/2) Figure 18. Input voltage vs. input charge Figure 19. Turn-off drain source voltage slope (part 1/2) Doc ID 7393 Rev 8 13/31 Protection features VNB14NV04, VND14NV04, VND14NV04-1, VNS14NV04 Figure 20. Turn-off drain source voltage slope Figure 21. Capacitance variations (part 2/2) Figure 22. Switching time resistive load (part 1/2) Figure 23. Switching time resistive load (part 2/2) Figure 24. Output characteristics Figure 25. Normalized on resistance vs. temperature 14/31 Doc ID 7393 Rev 8 VNB14NV04, VND14NV04, VND14NV04-1, VNS14NV04 Protection features Figure 26. Normalized input threshold voltage Figure 27. Current limit vs. junction vs. temperature temperatures Figure 28. Step response current limit Doc ID 7393 Rev 8 15/31 Protection features VNB14NV04, VND14NV04, VND14NV04-1, VNS14NV04 Figure 29. DPAK maximum turn-off current versus load inductance Legend: A= Single pulse at TJstart=150C B= Repetitive pulse at TJstart=100C C= Repetitive pulse at TJstart=125C Conditions: VCC=13.5 V Values are generated with RL=0 In case of repetitive pulses, Tjstart (at beginning of each demagnetization) of every pulse must not exceed the temperature specified above for curves B and C. Figure 30. DPAK demagnetization 16/31 Doc ID 7393 Rev 8 VNB14NV04, VND14NV04, VND14NV04-1, VNS14NV04 Protection features Figure 31. D2PAK maximum turn-off current versus load inductance Legend: A= Single pulse at TJstart=150C B= Repetitive pulse at TJstart=100C C= Repetitive pulse at TJstart=125C Conditions: VCC=13.5 V Values are generated with RL=0 In case of repetitive pulses, Tjstart (at beginning of each demagnetization) of every pulse must not exceed the temperature specified above for curves B and C. Figure 32. D2PAK demagnetization Doc ID 7393 Rev 8 17/31 Package thermal data VNB14NV04, VND14NV04, VND14NV04-1, VNS14NV04 4 Package thermal data 4.1 DPAK thermal data Figure 33. DPAK PC board(1) 1. Layout condition of Rth and Zth measurements (PCB FR4 area = 60 mm x 60 mm, PCB thickness=2 mm, Cu thickness=35 m, Copper areas: from minimum pad lay-out to 8 cm2). Figure 34. DPAK Rthj-amb vs PCB copper area in open box free air condition 18/31 Doc ID 7393 Rev 8 VNB14NV04, VND14NV04, VND14NV04-1, VNS14NV04 Package thermal data Figure 35. DPAK thermal impedance junction ambient single pulse Figure 36. Thermal fitting model of an OMNIFET II in DPAK Pulse calculation formula Z TH = R TH + Z THtp ( 1 - ) where = t p T Table 5. DPAK thermal parameter Area/island(cm2) Footprint R1 (C/W) 0.1 R2 (C/W) 0.35 R3 ( C/W) 1.20 R4 (C/W) 2 R5 (C/W) 15 R6 (C/W) 61 C1 (W.s/C) 0.0006 C2 (W.s/C) 0.0021 C3 (W.s/C) 0.05 Doc ID 7393 Rev 8 6 24 19/31 Package thermal data Table 5. 4.2 VNB14NV04, VND14NV04, VND14NV04-1, VNS14NV04 DPAK thermal parameter (continued) Area/island(cm2) Footprint C4 (W.s/C) 0.3 C5 (W.s/C) 0.45 C6 (W.s/C) 0.8 6 5 SO-8 thermal data Figure 37. SO-8 PC board(1) 1. Layout condition of Rth and Zth measurements (PCB FR4 area = 58 mm x 58 mm, PCB thickness=2 mm, Cu thickness=35 m, Copper areas: 0.14 cm2, 0.6 cm2, 1.6 cm2). Figure 38. SO-8 Rthj-amb vs PCB copper area in open box free air condition 20/31 Doc ID 7393 Rev 8 VNB14NV04, VND14NV04, VND14NV04-1, VNS14NV04 4.3 Package thermal data D2PAK thermal data Figure 39. D2PAK PC board(1) 1. Layout condition of Rth and Zth measurements (PCB FR4 area = 60 mm x 60 mm, PCB thickness=2 mm, Cu thickness=35 m, Copper areas: from minimum pad lay-out to 8 cm2). Figure 40. D2PAK Rthj-amb vs PCB copper area in open box free air condition Doc ID 7393 Rev 8 21/31 Package thermal data VNB14NV04, VND14NV04, VND14NV04-1, VNS14NV04 Figure 41. D2PAK thermal impedance junction ambient single pulse Figure 42. Thermal fitting model of an OMNIFET II in D2PAK Pulse calculation formula Z TH = R TH + Z THtp ( 1 - ) where = t p T Table 6. 22/31 D2PAK thermal parameter Area/island(cm2) Footprint R1 (C/W) 0.1 R2 (C/W) 0.35 R3 ( C/W) 0.3 R4 (C/W) 4 R5 (C/W) 9 R6 (C/W) 37 C1 (W.s/C) 0.0006 C2 (W.s/C) 2.10E-03 Doc ID 7393 Rev 8 6 22 VNB14NV04, VND14NV04, VND14NV04-1, VNS14NV04 Table 6. Package thermal data D2PAK thermal parameter (continued) Area/island(cm2) Footprint C3 (W.s/C) 8.00E-02 C4 (W.s/C) 0.45 C5 (W.s/C) 2 C6 (W.s/C) 3 Doc ID 7393 Rev 8 6 5 23/31 Package information VNB14NV04, VND14NV04, VND14NV04-1, VNS14NV04 5 Package information 5.1 ECOPACK(R) In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK(R) is an ST trademark. 5.2 TO-251 (IPAK) mechanical data Figure 43. TO-251 (IPAK) package dimension Table 7. TO-251 (IPAK) mechanical data Millimeters Dim. Min. 24/31 Typ. Max. A 2.2 2.4 A1 0.9 1.1 A3 0.7 1.3 B 0.64 0.9 B2 5.2 5.4 Doc ID 7393 Rev 8 VNB14NV04, VND14NV04, VND14NV04-1, VNS14NV04 Table 7. Package information TO-251 (IPAK) mechanical data (continued) Millimeters Dim. Min. Typ. B3 0.85 B5 0.3 B6 0.95 C 0.45 0.6 C2 0.48 0.6 D 6 6.2 E 6.4 6.6 G 4.4 4.6 H 15.9 16.3 L 9 9.4 L1 0.8 1.2 L2 5.3 Max. 0.8 1 D2PAK mechanical data Figure 44. D2PAK package dimension Doc ID 7393 Rev 8 25/31 Package information VNB14NV04, VND14NV04, VND14NV04-1, VNS14NV04 D2PAK mechanical data Table 8. Millimeters Dim. Min. Max. A 4.4 4.6 A1 2.49 2.69 A2 0.03 0.23 B 0.7 0.93 B2 1.14 1.7 C 0.45 0.6 C2 1.23 1.36 D 8.95 9.35 D1 E 8 10 E1 10.4 8.5 G 4.88 5.28 L 15 15.85 L2 1.27 1.4 L3 1.4 1.75 M 2.4 3.2 R V2 26/31 Typ. 0.4 0 Doc ID 7393 Rev 8 8 VNB14NV04, VND14NV04, VND14NV04-1, VNS14NV04 5.4 Package information TO-252 (DPAK) mechanical data Figure 45. TO-252 (DPAK) package dimension Table 9. TO-252 (DPAK) mechanical data Millimeters Dim. Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 B 0.64 0.90 B2 5.20 5.40 C 0.45 0.6 C2 0.48 0.6 D 6 6.20 D1 E 5.1 6.4 6.6 E1 4.7 e 2.28 G 4.4 4.6 H 9.35 10.1 L2 0.8 Doc ID 7393 Rev 8 27/31 Package information VNB14NV04, VND14NV04, VND14NV04-1, VNS14NV04 Table 9. TO-252 (DPAK) mechanical data (continued) Millimeters Dim. Min. L4 0.6 R Max. 1 0.2 V2 0 Package weight 5.5 Typ. 8 Gr. 0.29 SO-8 mechanical data Figure 46. SO-8 package dimension Table 10. SO-8 mechanical data Millimeters Dim. Min. 28/31 Typ. Max. A 1.75 2.40 a1 0.25 0.1 a2 1.65 b 0.85 0.35 b1 0.25 0.19 Doc ID 7393 Rev 8 VNB14NV04, VND14NV04, VND14NV04-1, VNS14NV04 Table 10. Package information SO-8 mechanical data (continued) Millimeters Dim. Min. C Typ. 0.5 c1 Max. 0.25 45 D 5 4.8 E 6.2 5.8 e 1.27 e3 3.81 F 4 3.8 L 1.27 0.4 M 0.6 F 8 Doc ID 7393 Rev 8 29/31 Revision history 6 VNB14NV04, VND14NV04, VND14NV04-1, VNS14NV04 Revision history Table 11. Document revision history Date Revision 21-Jun-2004 6 Initial release. 03-Apr-2009 7 Document reformatted. Added Table 1: Device summary on page 1. Updated Section 5: Package information on page 24 8 Added part number VNS14NV04. Added SO-8 package: - Updated Table 1: Device summary - Updated Table 2: Absolute maximum rating - Updated Table 3: Thermal data - Updated Chapter 4: Package thermal data - Updated Chapter 5: Package information 06-Apr-2010 30/31 Changes Doc ID 7393 Rev 8 VNB14NV04, VND14NV04, VND14NV04-1, VNS14NV04 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. 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