MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistor MRF1375 Designed for 1025-1150 MHz pulse common base amplifier applications such as TACAN and DME. e Guaranteed Performance @ 1090 MHz Output Power = 375 Watts Peak Gain = 6.7 dB Min 7.5 dB (Typ) 375 W (PEAK), 1025-1150 MHz . na. MICROWAVE POWER * 100% Tested for Load Mismatch at All Phase Angles with 3:1 VSWR TRANSISTOR * Hermetically Sealed Package NPN SILICON Silicon Nitride Passivated Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration Internal Input Matching e Characterized using 10 us, 1% Duty Pulse Format CASE 355G-01, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage VCES 70 Vde CollectorBase Voltage VCBO 70 Vde Emitter-Base Voltage VEBO 40 Vde Collector Current Peak (1) Ic 29 Adc Total Device Dissipation @ Tc = 25 CG (1) (2) Pp 1458 Watts Derate above 25C 8.33 wic Storage Temperature Range Tstg 65 to +200 C Junction Temperature Ty 200 c THERMAL CHARACTERISTICS Rating Symbol Max Unit Thermal Resistance, Junction to Case (3) (4) Reuc 0.12 CW NOTES: 1. Under pulse RF operating conditions. 2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF amplifiers. 3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. 4. Pulse Width = 10 11s, Duty Cycle = 1%. REV? MRF1375 MOTOROLA RF DEVICE DATA 2-700 ELECTRICAL CHARACTERISTICS (Tc = 25'C unless otherwise noted.) Characteristic | Symbol Min Typ Max Unit OFF CHARACTERISTICS Coliector-Emitter Breakdown Voltage (Ic = 60 mAdc, VgE = 0) V(BR)CES 70 _ _ Vde Coilector-Base Breakdown Voltage (ic = 60 mAdc. iE = 0) V(BR)CBO 70 _ _ Vde Emitter-Base Breakdown Voltage (lg = 10 mAdc, Ic = 0) V(BR)EBO 40 _ _ Vde Collector Cutoff Current (VCB = 50 Vdc, IE = 0) ICBO _ _ 3.0 mAdc ON CHARACTERISTICS DC Current Gain (ic = 5.0 Adc, Vg = 5.0 Vdc) | rE 10 FUNCTIONAL TESTS Common-Base Amplifier Power Gain Gpg 67 7.5 _ dB (Vcc = 50 Vdc, Pout = 375 W Peak, f = 1090 MHz) Collector Efficiency Nc 40 _ _ So (Voc = 50 Vde, Poyt = 375 W Peak, f= 1090 MHz) Load Mismatch v No Degradation in Output Power (Voc = 50 Vde, Poyt = 375 W Peak, f = 1090 MHz, Load VSWR = 3:1 All Phase Angles) O+ L Pilil.- Lt 27 ce 03 C405 24 [ 211 2 DUT. 210 212 213 z z H+~< RF Input ct RF Output Ct.c2 82 pF ATC Chip 2 C3 TF 50V "4 = Board Material -- Teflon Glass Laminate. Dielectric C4 10 WF 100 V. Electrolytic Thickness 0.020. <= 255.202. Coppe C5 1000 pF 0 V, Electroiytic Ld HeRNESS 0.060 E P= 99. OF, LOPPET | 3 Turns # 18AWG, 1:8 ID, 0.18 Long Microstrip, See Details lk 1339 185 a 52m le 53 325 485 be 682. _ | [ 4185 221 1 ips 414 389 642 Figure 1. Test Circuit MOTOROLA RF DEVICE DATA MRF1375 2-701 500 450 400 350 300 250 Voc = 50V 200 f = 1090 MHz 150 PULSE = 10 ts, 1% DF 100 50 Poyt. OUTPUT POWER (WATTS) 0 158 20 25 30 36 40 45 50 55 60 65 70 75 80 85 90 95 100 Pin. INPUT POWER (WATTS) Figure 2. Output Power versus Input Power Pout = 375 W. Voc = 50V Tp = 10 us, DF = 1% Freq Zin ZoOL* MHz Ohms Ohms (1) 1025 2.44j1.7 | 11+ j1.3 1050 2.44j1.2 | 1.1+j1.4 1090 1.84511 1.44513 1125 1.64j1.1 1.34513 1150 144)10 | 124j1.6 U1) 2g," Is the conjugate of the optimum load impedance into which Ihe device operates al a i fe DARL! | given output power voltage and Irequency. a . i } ST Zin hh = ee eifpitee _7 a 7 ' . eon Pom ee os . wo . ae 4 ad rym 8 g "a . Figure 3. Series Equivalent Input/Output Impedances MRF1375 MOTOROLA AF DEVICE DATA 2-702