©2006 Integrated Device Technology, Inc.
NOVEMBER 2006
DSC-3089/06
1
Features
◆◆
◆◆
◆High-speed access and chip select times
– Military: 20/25/35/45/55/70/90/120/150ns (max.)
– Industrial: 20/25/35/45ns (max.)
– Commercial: 15/20/25/35/45ns (max.)
◆◆
◆◆
◆Low-power consumption
◆◆
◆◆
◆Battery backup operation
– 2V data retention voltage (LA version only)
◆◆
◆◆
◆Produced with advanced CMOS high-performance
technology
◆◆
◆◆
◆CMOS process virtually eliminates alpha particle soft-error
rates
◆◆
◆◆
◆Input and output directly TTL-compatible
◆◆
◆◆
◆Static operation: no clocks or refresh required
◆◆
◆◆
◆Available in ceramic and plastic 24-pin DIP, 24-pin Thin Dip,
24-pin SOIC and 24-pin SOJ
◆◆
◆◆
◆Military product compliant to MIL-STD-833, Class B
Description
The IDT6116SA/LA is a 16,384-bit high-speed static RAM
organized as 2K x 8. It is fabricated using IDT's high-performance,
high-reliability CMOS technology.
Access times as fast as 15ns are available. The circuit also offers a
reduced power standby mode. When CS goes HIGH, the circuit will
automatically go to, and remain in, a standby power mode, as long
as CS remains HIGH. This capability provides significant system level
power and cooling savings. The low-power (LA) version also offers a
battery backup data retention capability where the circuit typically
consumes only 1µW to 4µW operating off a 2V battery.
All inputs and outputs of the IDT6116SA/LA are TTL-compatible. Fully
static asynchronous circuitry is used, requiring no clocks or refreshing
for operation.
The IDT6116SA/LA is packaged in 24-pin 600 and 300 mil plastic or
ceramic DIP, 24-lead gull-wing SOIC, and 24-lead J-bend SOJ providing
high board-level packing densities.
Military grade product is manufactured in compliance to the latest
version of MIL-STD-883, Class B, making it ideally suited to military
temperature applications demanding the highest level of performance and
reliability.
Functional Block Diagram
CS
A
0
A
10
I/O
0
I/O
7
OE
WE
128 X 128
MEMORY
ARRAY
I/O CONTROL
ADDRESS
DECODER
INPUT
DATA
CIRCUIT
CONTROL
CIRCUIT
GND
3089 drw 01
V
CC
,
CMOS Static RAM
16K (2K x 8-Bit)
IDT6116SA
IDT6116LA
2
IDT6116SA/LA
CMOS Static RAM 2K (16K x 8-Bit) Military, Commercial, and Industrial Temperature Ranges
Pin Configurations
Absolute Maximum Ratings(1)
Truth Table(1)
Pin Description
Capacitance (TA = +25°C, f = 1.0 MHZ)
DIP/SOIC/SOJ
Top View
3089 drw 02
5
6
7
8
9
10
11
12GND
1
2
3
4
24
23
22
21
20
19
18
17
P24-2
P24-1
D24-2
D24-1
SO24-2
SO24-4
A
5
A
4
A
3
A
2
A
1
A
0
I/O
0
I/O
1
V
CC
A
9
WE
A
10
I/O
5
I/O
4
OE
16
15
14
13
A
7
A
6
I/O
7
I/O
6
CS
A
8
I/O
2
I/O
3
,
NOTE:
1. This parameter is determined by device characterization, but is not production
tested.
Symbol Parameter
(1)
Conditions Max. Unit
C
IN
Inp ut Cap ac itance V
IN
= 0V 8 pF
C
I/O
I/O Capacitance V
OUT
= 0V 8 pF
3089 tbl 03
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those
indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect
reliability.
2. VTERM must not exceed VCC +0.5V.
Symbol Rating Com'l. Mil. Unit
V
TERM
(2)
Te rminal Voltage
with Respect
to GND
-0.5 to +7.0 -0.5 to +7.0 V
T
A
Operating
Temperature 0 to +70 -55 to +125 oC
T
BIAS
Temperature
Under Bias -55 to +125 -65 to +135 oC
T
STG
Storage Temperature -55 to +125 -65 to +150 oC
P
T
Po wer Diss ip atio n 1. 0 1. 0 W
I
OUT
DC Output Current 50 50 mA
30 89 t b l 04
Name Description
A
0
- A
10
Address Inputs
I/O
0
- I/O
7
Data Inp ut/ Outp ut
CS Chip Sele ct
WE Write Enable
OE Output Enable
V
CC
Power
GND Ground
3089 tbl 01
NOTE:
1 . H = VIH, L = VIL, X = Don't Care.
Mode CS OE WE I/O
Standby H X X High-Z
Read L L H DATA
OUT
Read L H H High-Z
Write L X L DATA
IN
30 89 t b l 02
6.42
IDT6116SA/LA
CMOS Static RAM 2K (16K x 8-Bit) Military, Commercial, and Industrial Temperature Ranges
3
NOTES:
1. All values are maximum guaranteed values.
2. fMAX = 1/tRC, only address inputs are cycling at fMAX, f = 0 means address inputs are not changing.
DC Electrical Characteristics(1)
(VCC = 5.0V ± 10%, VLC = 0.2V, VHC = VCC - 0.2V)
DC Electrical Characteristics
(VCC = 5.0V ± 10%)
Recommended Operating
Temperature and Supply Voltage Recommended DC
Operating Conditions
NOTES:
1. VIL (min.) = –3.0V for pulse width less than 20ns, once per cycle.
2. VIN must not exceed VCC +0.5V.
Grade Ambient
Temperature GND Vcc
Military -55
O
C to +125
O
C0V 5.0V ± 10%
Industrial -40
O
C to +85
O
C0V 5.0V ± 10%
Commercial 0
O
C to + 70
O
C0V 5.0V ± 10%
3089 tbl 05
Symbol Parameter Min. Typ. Max. Unit
V
CC
Supp ly Voltage 4.5 5.0 5.5
(2)
V
GND Ground 0 0 0 V
V
IH
Input High Voltage 2.2 3.5 V
CC
+0.5 V
V
IL
Inp ut Low Voltag e -0.5
(1)
____
0.8 V
3089 tbl 06
Symbol Parameter Test Conditions
IDT6116SA IDT6116LA
UnitMin. Max. Min. Max.
|I
LI
|Input Leakage Current V
CC
= Max.,
V
IN
=
GND to V
CC
MIL.
COM'L.
____
____
10
5
____
____
5
2µA
|I
LO
| Output Leakag e Curre nt V
CC
= Max., CS = V
IH
,
V
OUT
= GND to V
CC
MIL.
COM'L.
____
____
10
5
____
____
5
2µA
V
OL
Outp ut Low Voltage I
OL
= 8mA, V
CC
= Min.
____
0.4
____
0.4 V
V
OH
Outp ut Hi g h Vo l tag e I
OH
= -4mA, V
CC
= Min. 2.4
____
2.4
____
V
3089 tb l 07
Symbol Parameter Power
6116SA15 6116SA20
6116LA20 6116SA25
6116LA25 6116SA35
6116LA35
Unit
Com'l
Only Com'l
& In d Mil Com'l
& I nd Mil Com'l.
& I nd. M il
I
CC1
Operating Power Supply Current
CS < V
IL
, Outp uts Ope n
V
CC
= Max., f
=
0
SA 105 105 130 100 90 100 90 mA
LA 95 95 120 95 85 95 85
I
CC2
Dynamic Operating Current
CS < V
IL
, Outp uts Ope n
V
CC
= Max., f = f
MAX
(2)
SA 150 130 150 120 135 100 115 mA
LA 140 120 140 110 125 95 105
I
SB
Stand by Power Supply Current
(TTL Le ve l)
CS > V
IH
, Outputs Open
V
CC
= Max., f = f
MAX
(2)
SA 40 40 50 40 45 25 35 mA
LA 35 35 45 35 40 25 30
I
SB1
Full Standby Po we r Supply Current
(CMOS Lev e l )
CS > V
HC
, V
CC
= Max.,
V
IN
< V
LC
or V
IN
> V
HC
, f = 0
SA 2 2 10 2 10 2 10 mA
LA 0.1 0.1 0.9 0.1 0.9 0.1 0.9
3089 tbl 08
4
IDT6116SA/LA
CMOS Static RAM 2K (16K x 8-Bit) Military, Commercial, and Industrial Temperature Ranges
NOTES:
1. TA = + 25°C
2. tRC = Read Cycle Time.
3. This parameter is guaranteed by device characterization, but is not production tested.
DC Electrical Characteristics(1) (continued)
(VCC = 5.0V ± 10%, VLC = 0.2V, VHC = VCC - 0.2V)
NOTES:
1. All values are maximum guaranteed values.
2. fMAX = 1/tRC, only address inputs are toggling at fMAX, f = 0 means address inputs are not changing.
Data Retention Characteristics Over All Temperature Ranges
(LA Version Only) (VLC = 0.2V, VHC = VCC – 0.2V)
Symbol Parameter Power
6116SA45
6116LA45 6116SA55
6116LA55 6116SA70
6116LA70 6116SA90
6116LA90 6116SA120
6116LA120 6116SA150
6116LA150
Unit
Com'l
& I nd Mil Mil Only Mil Only Mil Only Mil Only Mil Only
I
CC1
Operating Power Supply
Current, CS < V
IL
,
Outputs Open
V
CC
= Max., f
=
0
SA 100 90 90 90 90 90 90 mA
LA 95 85 85 85 85 85 85
I
CC2
Dynamic Op erating
Current, CS < V
IL
,
Outputs Open
V
CC
= Max., f = f
MAX
(2)
SA 100 100 100 100 100 100 90 mA
LA 90 95 90 90 85 85 85
I
SB
Standby Power Supply
Curre nt (TTL Lev e l )
CS > V
IH
, Outp uts Op e n
V
CC
= Max., f = f
MAX
(2)
SA 25 25 25 25 25 25 25 mA
LA 20 20 20 20 25 15 15
I
SB1
Full Standby Power
S up p l y Current (CM OS
Level), CS > V
HC
,
V
CC
= Max., V
IN
< V
LC
or V
IN
> V
HC
, f = 0
SA2101010101010
mA
LA 0.1 0.9 0.9 0.9 0.9 0.9 0.9
3089 tb l 09
Typ.
(1)
V
CC
@ Max.
V
CC
@
Symbol Parameter Test Condition Min. 2.0V 3.0V 2.0V 3.0V Unit
V
DR
V
CC
for Data Retenti o n
____
2.0
____ ____ ____ ____
V
I
CCDR
Data Re te ntio n Curre nt MIL.
COM'L.
____
____
0.5
0.5 1.5
1.5 200
20 300
30 µA
t
CDR
(3)
Chip De s e le c t to Data
Retention Time CS > V
HC
V
IN
> V
HC
or < V
LC
____
0
____ ____ ____
ns
t
R
(3)
Op e ratio n Re c o ve ry Tim e t
RC
(2)
____ ____ ____ ____
ns
I
I
LI
I
Input Le akag e Current
____ ____ ____
22
µA
3089 tbl 10
6.42
IDT6116SA/LA
CMOS Static RAM 2K (16K x 8-Bit) Military, Commercial, and Industrial Temperature Ranges
5
Low VCC Data Retention Waveform
AC Test Conditions
DATA RETENTION MODE
V
CC
CS
t
CDR
4.5V V
DR
≥2V
V
DR
4.5V
t
R
V
IH
V
IH
3089 drw 03
,
Figure 2. AC Test Load
(for tOLZ, tCLZ, tOHZ, tWHZ, tCHZ & tOW)
Figure 1. AC Test Load
*Including scope and jig.
3089 drw 04
30pF*
255Ω
5V
DATA
OUT
480Ω
,
5pF*
255Ω
5V
480Ω
DATA
OUT
3089 drw 05
,
Input Pulse Levels
Input Rise /Fall Times
Input Timing Refere nce Le ve ls
Output Reference Levels
AC Test Load
GND to 3. 0V
5ns
1.5V
1.5V
See Figures 1 and 2
3089 tbl 11
6
IDT6116SA/LA
CMOS Static RAM 2K (16K x 8-Bit) Military, Commercial, and Industrial Temperature Ranges
AC Electrical Characteristics (VCC = 5V ± 10%, All Temperature Ranges) (continued)
NOTES:
1. 0°C to +70°C temperature range only.
2. –55°C to +125°C temperature range only.
3. This parameter guaranteed with the AC Load (Figure 2) by device characterization, but is not production tested.
AC Electrical Characteristics (VCC = 5V ± 10%, All Temperature Ranges)
Symbol Parameter
6116SA15
(1)
6116SA20
6116LA20 6116SA25
6116LA25 6116SA35
6116LA35
Unit
Min. Max. Min. Max. Min. Max. Min. Max.
Read C ycl e
t
RC
Re ad Cy cle Time 15 ____ 20 ____ 25 ____ 35 ____ ns
t
AA
Address Access Time ____ 15 ____ 19 ____ 25 ____ 35 ns
t
ACS
Chip Select Access Time ____ 15 ____ 20 ____ 25 ____ 35 ns
t
CLZ
(3)
Chip Select to Output in Low-Z 5 ____ 5____ 5____ 5____ ns
t
OE
Ou tpu t E nab le to Outp ut Val id ____ 10 ____ 10 ____ 13 ____ 20 ns
t
OLZ
(3)
Outp ut En ab le to Outp ut in Lo w-Z 0 ____ 0____ 5____ 5____ ns
t
CHZ
(3)
Chi p Desel e c t to Outp ut i n Hi g h-Z ____ 10 ____ 11 ____ 12 ____ 15 ns
t
OHZ
(3)
Outp u t Di s ab le to Outp ut in Hi g h-Z ____ 8____ 8____ 10 ____ 13 ns
t
OH
Output Ho ld from Add res s Change 5 ____ 5____ 5____ 5____ ns
t
PU
(3)
Chip S e le ct to Po we r Up Time 0 ____ 0____ 0____ 0____ ns
t
PD
(3)
Chip Deselect to Power Down Ti me ____ 15 ____ 20 ____ 25 ____ 35 ns
3 0 89 tb l 12
Symbol Parameter
6116SA45
6116LA45 6116SA55
(2)
6116LA55
(2)
6116SA70
(2)
6116LA70
(2)
6116SA90
(2)
6116LA90
(2)
6116SA120
(2)
6116LA120
(2)
6116SA150
(2)
6116LA150
(2)
Unit
Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Min. Max.
Read C ycl e
t
RC
Read Cyc le Time 45
____
55
____
70
____
90
____
120
____
150
____
ns
t
AA
Address Access Time
____
45
____
55
____
70
____
90
____
120
____
150 ns
t
ACS
Chip Select Access Time
____
45
____
50
____
65
____
90
____
120
____
150 ns
t
CLZ
(3)
Chip Select to Output in Low-Z 5
____
5
____
5
____
5
____
5
____
5
____
ns
t
OE
Ou tpu t E nab le to Outp ut Val id
____
25
____
40
____
50
____
60
____
80
____
100 ns
t
OLZ
(3)
Outp ut En ab le to Outp ut in Lo w-Z 5
____
5
____
5
____
5
____
5
____
5
____
ns
t
CHZ
(3)
Chi p Desel e c t to Outp ut i n Hi g h-Z
____
20
____
30
____
35
____
40
____
40
____
40 ns
t
OHZ
(3)
Ou tp ut Disab le to Outp ut in Hi g h-Z
____
15
____
30
____
35
____
40
____
40
____
40 ns
t
OH
Output Ho ld from Add res s Change 5
____
5
____
5
____
5
____
5
____
5
____
ns
3 0 89 tb l 13
6.42
IDT6116SA/LA
CMOS Static RAM 2K (16K x 8-Bit) Military, Commercial, and Industrial Temperature Ranges
7
Timing Waveform of Read Cycle No. 2(1,2,4)
Timing Wav eform of Read Cycle No. 1(1,3)
Timing Waveform of Read Cycle No. 3(1,3,4)
NOTES:
1. WE is HIGH for Read cycle.
2. Device is continously selected, CS is LOW.
3. Address valid prior to or coincident with CS transition LOW.
4. OE is LOW.
5. Transition is measured ±500mV from steady state.
ADDRESS
OE
CS
t
RC
t
AA
t
OE
t
ACS
DATA
OUT
t
OH
t
OLZ (5)
t
CLZ (5)
t
OHZ (5)
t
CHZ (5)
3089 drw 06
DATA
VALID
t
PD
I
CC
I
SB
t
PU
V
CC
Supply
Currents
,
ADDRESS
t
RC
t
AA
t
OH
t
OH
DATA
OUT
3089 drw 07
PREVIOUS DATA VALID DATA VALID
,
CS
t
ACS
DATA
OUT
t
CLZ (5)
t
CHZ (5)
DATA VALID
3089 drw 08
,
8
IDT6116SA/LA
CMOS Static RAM 2K (16K x 8-Bit) Military, Commercial, and Industrial Temperature Ranges
AC Electrical Characteristics (VCC = 5V ± 10%, All Temperature Ranges)
NOTES:
1. 0°C to +70°C temperature range only.
2. –55°C to +125°C temperature range only.
3. This parameter guaranteed with AC Load (Figure 2) by device characterization, but is not production tested.
4 . The specification for tDH must be met by the device supplying write data to the RAM under all operation conditions. Although tDH and tOW values will vary over voltage
and temperature, the actual tDH will always be smaller than the actual tOW.
AC Electrical Characteristics (VCC = 5V ± 10%, All Temperature Ranges) (continued)
6116SA15
(1)
6116SA20
6116LA20 6116SA25
6116LA25 6116SA35
6116LA35
Symbol Parameter Min. Max. Min. Max. Min. Max. Min. Max. Unit
Wr ite Cycle
t
WC
Write Cycle Time 15
____
20
____
25
____
35
____
ns
t
CW
Chip Select to End-of-Write 13
____
15
____
17
____
25
____
ns
t
AW
Address Valid to End-of-Write 14
____
15
____
17
____
25
____
ns
t
AS
Address Set-up Time 0
____
0
____
0
____
0
____
ns
t
WP
Write Pulse Width 12
____
12
____
15
____
20
____
ns
t
WR
Write Re co ve ry Ti me 0
____
0
____
0
____
0
____
ns
t
WHZ
(3)
W rite to Outp ut in Hig h-Z
____
7
____
8
____
16
____
20 ns
t
DW
Data to Write Time Overlap 12
____
12
____
13
____
15
____
ns
t
DH
(4)
Da ta Hold fro m Write Ti me 0
____
0
____
0
____
0
____
ns
t
OW
(3,4)
Ou tp u t A ct iv e from En d - o f- Wr it e 0
____
0
____
0
____
0
____
ns
3089 tbl 14
6116SA45
6116LA45 6116SA55
(2)
6116LA55
(2)
6116SA70
(2)
6116LA70
(2)
6116SA90
(2)
6116LA90
(2)
6116SA120
(2)
6116LA120
(2)
6116SA150
(2)
6116LA150
(2)
Symbol Parameter Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Unit
Wr ite Cycle
t
WC
Write Cycle Time 45
____
55
____
70
____
90
____
120
____
150
____
ns
t
CW
Chip Select to End-of-Write 30
____
40
____
40
____
55
____
70
____
90
____
ns
t
AW
Address Valid to End-of-Write 30
____
45
____
65
____
80
____
105
____
120
____
ns
t
AS
Address Set-up Time 0
____
5
____
15
____
15
____
20
____
20
____
ns
t
WP
Write Pulse Width 25
____
40
____
40
____
55
____
70
____
90
____
ns
t
WR
Write Re co ve ry Ti me 0
____
5
____
5
____
5
____
5
____
10
____
ns
t
WHZ
(3)
W rite to Outp ut in Hig h-Z
____
25
____
30
____
35
____
40
____
40
____
40 ns
t
DW
Data to Write Time Overlap 20
____
25
____
30
____
30
____
35
____
40
____
ns
t
DH
(4)
Da ta Hold fro m Write Time 0
____
5
____
5
____
5
____
5
____
10
____
ns
t
OW
(3,4)
Ou tp u t A ct iv e from En d - o f- Wri te 0
____
0
____
0
____
0
____
0
____
0
____
ns
3089 t bl 15
6.42
IDT6116SA/LA
CMOS Static RAM 2K (16K x 8-Bit) Military, Commercial, and Industrial Temperature Ranges
9
Timing W av eform of Write Cy cle No . 1 (WE Controlled Timing)(1,2,5,7)
Timing Wav eform of Write Cyc le No. 2 ( CS Controlled Timing)(1,2,3,5,7)
NOTES:
1. WE or CS must be HIGH during all address transitions.
2. A write occurs during the overlap of a LOW CS and a LOW WE.
3. tWR is measured from the earlier of CS or WE going HIGH to the end of the write cycle.
4 . During this period, the I/O pins are in the output state and the input signals must not be applied.
5. If the CS LOW transition occurs simultaneously with or after the WE LOW transition, the outputs remain in the high-impedance state.
6. Transition is measured ±500mV from steady state.
7. OE is continuously HIGH. If OE is LOW during a WE controlled write cycle, the write pulse width must be the larger of tWP or (tWHZ + tDW) to allow the I/O drivers
to turn off and data to be placed on the bus for the required tDW. If OE is HIGH during a WE controlled write cycle, this requirement does not apply and the write pulse
is the specified tWP. For a CS controlled write cycle, OE may be LOW with no degradation to tCW.
ADDRESS
DATA
OUT
CS
WE
DATA
IN
t
WC
t
AW
3089 drw 09
t
AS
t
WHZ(6)
(4)
t
DW
t
DH
(4)
t
OW
t
WR
t
CHZ (6)
t
WP (7)
(6)
PREVIOUS DATA VALID DATA
VALID
DATA VALID
(3)
,
CS
WE
DATA
IN
t
WC
t
AW
t
CW
t
WR (3)
t
DW
t
DH
t
AS
3089 drw 10
DATA VALID
ADDRESS
,
10
IDT6116SA/LA
CMOS Static RAM 2K (16K x 8-Bit) Military, Commercial, and Industrial Temperature Ranges
Ordering Information — Military
Blank
I
TP
P
SO
Y
15*
20
25
35
45
SA
LA
Commercial (0°C to +70°C)
Industrial (-40°C to +85°C)
300 mil Plastic DIP (P24-1)
600 mil Plastic DIP (P24-2)
300 mil Small Outline IC, Gull-Wing Bend (SO24-2)
300 mil SOJ, J-Bend (SO24-4)
Standard Power
Low Power
IDT 6116
Device Type
XX
Power
XXX
Speed
X
Package
X
Process/
Temperature
Range
3089 drw 12
Speed in nanoseconds
,
*Available in commercial temperature range and standard power only.
X
G Restricted hazardous substance device
Ordering Information — Commercial & Industrial
B
TD
D
20*
25*
35*
45
55
70
90
120
150**
SA
LA
Military (-55°C to +125°C)
Compliant to MIL-STD-883, Class B
300 mil CERDIP (D24-1)
600 mil CERDIP (D24-2)
Standard Power
Low Power
IDT 6116
Device Type
XX
Power
XXX
Speed
X
Package
X
Process/
Temperature
Range
3089 drw 11
Speed in nanoseconds
,
*Available in 300 mil packaging only.
**Available in 600 mil packaging only.
6.42
IDT6116SA/LA
CMOS Static RAM 2K (16K x 8-Bit) Military, Commercial, and Industrial Temperature Ranges
11
Datasheet Document History
1/7/00 Updated to new format
Pg. 1, 3, 4, 10 Added Industrial Temperature range offerings
Pg. 9, 10 Separated ordering information into military, commercial, and industrial temperature range offerings
Pg. 11 Added Datasheet Document History
08/09/00 Not recommended for new designs
02/01/01 Removed "Not recommended for new designs"
12/30/03 Pg. 3,10 Corrected Industrial temp from -45C to -40C.
03/31/05 Pg. 10 Added "Restricted hazardous substance device" to ordering information.
11/15/06 Pg. 3 Changed power limits for commercial and industrial on speed grades 25ns and 35ns.
Pg.4 Changed powe limits for commercial and industrial on speed grade 45ns. Refer to
PCN SR-0602-02.
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6024 Silver Creek Valley Road 800-345-7015 or ipchelp@idt.com
San Jose, CA 95138 408-284-8200 800-345-7015
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Active Parts | Obsolete Parts
Searched for Documents for Obsolete parts containing "6116LA150". There are 2 matching documents. Displaying matches 1 through 2.
Orderable Part Generic Part Status Type Title Size Revision Date
6116LA150DM 6116 Obsolete Datasheet 6116SA_LA Data Sheet 111 11/15/2006
6116LA150TDM 6116 Obsolete Datasheet 6116SA_LA Data Sheet 111 11/15/2006
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