MPQ2906
MPQ2907
PNP SILICON QUAD TRANSISTOR DESCRIPTION:
The CENTRAL SEMICONDUCTOR MPQ2906,
MPQ2907 types are comprised of four independent
PNP silicon transistors mounted in a 14-pin DIP,
designed for small signal, general purpose amplifier
and switching applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC 600 mA
Power Dissipation (per transistor) PD 650 mW
Power Dissipation (total package) PD 2.0 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
ICBO V
CB=30V 50 nA
IEBO V
EB=3.0V 50 nA
BVCBO I
C=10μA 60 V
BVCEO I
C=10mA 40 V
BVEBO I
E=10μA 5.0 V
VCE(SAT) I
C=150mA, IB=15mA 0.4 V
VCE(SAT) I
C=300mA, IB=30mA 1.6 V
VBE(SAT) I
C=150mA, IB=15mA 1.3 V
VBE(SAT) I
C=300mA, IB=30mA 2.6 V
fT V
CE=20V, IC=50mA, f=100MHz 200 MHz
Cob V
CB=10V, IE=0, f=1.0MHz 8.0 pF
Cib V
BE=2.0V, IC=0, f=1.0MHz 30 pF
ton V
CC=30V, IC=150mA, IB1=15mA 30 ns
toff V
CC=6.0V, IC=150mA, IB1=IB2=15mA 150 ns
MPQ2906 MPQ2907
MIN MAX MIN MAX
hFE V
CE=10V, IC=10mA 35 - 75 -
hFE V
CE=10V, IC=150mA 40 - 100 -
hFE V
CE=10V, IC=300mA 30 - 50 -
TO-116 CASE
R1 (30-January 2012)
www.centralsemi.com
MPQ2906
MPQ2907
PNP SILICON QUAD TRANSISTOR
TO-116 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Collector Q1 8) Collector Q3
2) Base Q1 9) Base Q3
3) Emitter Q1 10) Emitter Q3
4) No Connection 11) No Connection
5) Emitter Q2 12) Emitter Q4
6) Base Q2 13) Base Q4
7) Collector Q2 14) Collector Q4
MARKING: FULL PART NUMBER
PIN CONFIGURATION
www.centralsemi.com
R1 (30-January 2012)