MPQ2906
MPQ2907
PNP SILICON QUAD TRANSISTOR DESCRIPTION:
The CENTRAL SEMICONDUCTOR MPQ2906,
MPQ2907 types are comprised of four independent
PNP silicon transistors mounted in a 14-pin DIP,
designed for small signal, general purpose amplifier
and switching applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC 600 mA
Power Dissipation (per transistor) PD 650 mW
Power Dissipation (total package) PD 2.0 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
ICBO V
CB=30V 50 nA
IEBO V
EB=3.0V 50 nA
BVCBO I
C=10μA 60 V
BVCEO I
C=10mA 40 V
BVEBO I
E=10μA 5.0 V
VCE(SAT) I
C=150mA, IB=15mA 0.4 V
VCE(SAT) I
C=300mA, IB=30mA 1.6 V
VBE(SAT) I
C=150mA, IB=15mA 1.3 V
VBE(SAT) I
C=300mA, IB=30mA 2.6 V
fT V
CE=20V, IC=50mA, f=100MHz 200 MHz
Cob V
CB=10V, IE=0, f=1.0MHz 8.0 pF
Cib V
BE=2.0V, IC=0, f=1.0MHz 30 pF
ton V
CC=30V, IC=150mA, IB1=15mA 30 ns
toff V
CC=6.0V, IC=150mA, IB1=IB2=15mA 150 ns
MPQ2906 MPQ2907
MIN MAX MIN MAX
hFE V
CE=10V, IC=10mA 35 - 75 -
hFE V
CE=10V, IC=150mA 40 - 100 -
hFE V
CE=10V, IC=300mA 30 - 50 -
TO-116 CASE
R1 (30-January 2012)
www.centralsemi.com