PD - 95723A IRF7380PbF HEXFET(R) Power MOSFET Applications l High frequency DC-DC converters l Lead-Free VDSS Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current RDS(on) max 73m:@VGS = 10V 80V 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 S1 G2 ID 3.6A SO-8 Top View Absolute Maximum Ratings Parameter Max. Units 80 V VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V 20 3.6 2.9 IDM Continuous Drain Current, VGS @ 10V Pulsed Drain Current PD @TA = 25C Maximum Power Dissipation 2.0 W Linear Derating Factor 0.02 W/C dv/dt TJ Peak Diode Recovery dv/dt Operating Junction and 2.3 -55 to + 150 V/ns C TSTG Storage Temperature Range ID @ TA = 25C ID @ TA = 100C h c A 29 e Thermal Resistance Typ. Max. Units RJL Junction-to-Drain Lead Parameter --- 42 C/W RJA Junction-to-Ambient (PCB Mount) * --- 50 Notes through are on page 8 www.irf.com 1 07/09/08 IRF7380PbF Static @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 80 --- --- V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient --- 0.09 --- V Conditions VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 2.2A f RDS(on) Static Drain-to-Source On-Resistance --- 61 73 VGS(th) Gate Threshold Voltage 2.0 --- 4.0 V VDS = VGS, ID = 250A IDSS Drain-to-Source Leakage Current --- --- 20 A VDS = 80V, VGS = 0V --- --- 250 IGSS Gate-to-Source Forward Leakage --- --- 200 nA VGS = 20V Gate-to-Source Reverse Leakage --- --- -200 VDS = 64V, VGS = 0V, TJ = 125C VGS = -20V Dynamic @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Max. Units --- --- S Conditions gfs Qg Forward Transconductance 4.3 VDS = 25V, ID = 2.2A Total Gate Charge --- 15 23 Qgs Gate-to-Source Charge --- 2.9 --- Qgd Gate-to-Drain ("Miller") Charge --- 4.5 --- VGS = 10V td(on) Turn-On Delay Time --- 9.0 --- VDD = 40V tr Rise Time --- 10 --- td(off) Turn-Off Delay Time --- 41 --- tf Fall Time --- 17 --- VGS = 10V Ciss Input Capacitance --- 660 --- VGS = 0V Coss Output Capacitance --- 110 --- Crss Reverse Transfer Capacitance --- 15 --- Coss Output Capacitance --- 710 --- VGS = 0V, VDS = 1.0V, = 1.0MHz Coss Output Capacitance --- 72 --- VGS = 0V, VDS = 64V, = 1.0MHz Coss eff. Effective Output Capacitance --- 140 --- VGS = 0V, VDS = 0V to 64V ID = 2.2A nC VDS = 40V f ID = 2.2A ns RG = 24 f VDS = 25V pF = 1.0MHz g Avalanche Characteristics EAS Parameter Single Pulse Avalanche Energy IAR Avalanche Current c dh Typ. Max. Units --- 75 mJ --- 2.2 A Diode Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current --- --- 3.6 A MOSFET symbol ISM (Body Diode) Pulsed Source Current --- --- 29 A showing the integral reverse VSD (Body Diode) Diode Forward Voltage --- --- 1.3 V p-n junction diode. TJ = 25C, IS = 2.2A, VGS = 0V trr Reverse Recovery Time --- 50 --- ns Qrr Reverse Recovery Charge --- 110 --- nC ton Forward Turn-On Time 2 ch D G S f TJ = 25C, IF = 2.2A, VDD = 40V di/dt = 100A/s f Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRF7380PbF 100 100 10 BOTTOM 1 3.7V 0.1 0.01 TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 7.0V 5.0V 4.5V 4.3V 4.0V 3.7V 10 BOTTOM 3.7V 1 20s PULSE WIDTH Tj = 150C 20s PULSE WIDTH Tj = 25C 0.1 0.001 0.1 1 10 100 0.1 1000 1 Fig 1. Typical Output Characteristics RDS(on), Drain-to-Source On Resistance (Normalized) 2.5 10 T J = 150C T J = 25C VDS = 15V 20s PULSE WIDTH 0 3.0 4.0 5.0 6.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 100 1000 Fig 2. Typical Output Characteristics 100 1 10 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) ID, Drain-to-Source Current () VGS 15V 10V 7.0V 5.0V 4.5V 4.3V 4.0V 3.7V 7.0 I D = 3.6A 2.0 1.5 1.0 0.5 V GS = 10V 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature (C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF7380PbF 100000 VGS , Gate-to-Source Voltage (V) 10000 C, Capacitance(pF) 12 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 1000 Ciss C oss 100 Crss 10 ID= 2.1A VDS= 16V 8 6 4 2 1 0 1 10 100 0 2 VDS, Drain-to-Source Voltage (V) 6 8 10 12 14 16 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 ID, Drain-to-Source Current (A) 100 ISD, Reverse Drain Current (A) 4 Q G Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 10 T J= 25 C TJ = 150 C 1 V GS = 0 V 0.1 0.0 0.5 1.0 1.5 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 VDS= 64V VDS= 40V 10 OPERATION IN THIS AREA LIMITED BY R DS(on) 10 100sec 1 1msec Tc = 25C Tj = 150C Single Pulse 0.1 2.0 1 10msec 10 100 1000 VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF7380PbF 4.0 RD VDS VGS ID , Drain Current (A) 3.0 D.U.T. RG + -V DD 10V 2.0 Pulse Width 1 s Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit 1.0 VDS 90% 0.0 25 50 75 100 125 150 TA , Ambient Temperature (C) 10% VGS Fig 9. Maximum Drain Current Vs. Ambient Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms (Z thJA ) 100 D = 0.50 0.20 10 Thermal Response 0.10 0.05 P DM 0.02 1 0.01 t1 t2 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = 2. Peak T 0.1 0.00001 0.0001 0.001 0.01 0.1 t1/ t 2 J = P DM x Z thJA 1 +T A 10 100 t 1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 RDS(on) , Drain-to -Source On Resistance (m ) IRF7380PbF RDS (on) , Drain-to-Source On Resistance (m) 95 90 85 80 VGS = 10V 75 70 65 60 55 50 0 5 10 15 20 25 30 800 700 600 500 400 300 ID = 3.6A 200 100 0 3.0 ID , Drain Current (A) 5.0 7.0 9.0 11.0 13.0 15.0 VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance Vs. Drain Current Fig 13. On-Resistance Vs. Gate Voltage Current Regulator Same Type as D.U.T. QG VGS .2F QGS .3F D.U.T. + V - DS QGD 200 VG EAS, Single Pulse Avalanche Energy (mJ) 50K 12V VGS 3mA Charge IG ID Current Sampling Resistors Fig 14a&b. Basic Gate Charge Test Circuit and Waveform 15V V(BR)DSS tp L VDS D.U.T RG IAS 20V I AS tp DRIVER + V - DD 0.01 Fig 15a&b. Unclamped Inductive Test circuit and Waveforms 6 A TOP 160 BOTTOM ID 1.0A 1.8A 2.2A 120 80 40 0 25 50 75 100 125 150 Starting TJ, Junction Temperature (C) Fig 15c. Maximum Avalanche Energy Vs. Drain Current www.irf.com IRF7380PbF SO-8 Package Outline(Mosfet & Fetky) Dimensions are shown in milimeters (inches) ' ,1&+(6 0,1 0$; $ $ E F ' ( H %$6,& H %$6,& + . / \ ',0 % $ + >@ ( $ ; H H ;E >@ $ 0,//,0(7(56 0,1 0$; %$6,& %$6,& .[ & $ \ >@ ;F ;/ & $ % 127(6 ',0(16,21,1* 72/(5$1&,1*3(5$60(<0 &21752//,1*',0(16,210,//,0(7(5 ',0(16,216$5(6+2:1,10,//,0(7(56>,1&+(6@ 287/,1(&21)250672-('(&287/,1(06$$ ',0(16,21'2(6127,1&/8'(02/'3527586,216 02/'3527586,21612772(;&(('>@ ',0(16,21'2(6127,1&/8'(02/'3527586,216 02/'3527586,21612772(;&(('>@ ',0(16,21,67+(/(1*7+2)/($')2562/'(5,1*72 $68%675$7( )22735,17 ;>@ >@ ;>@ ;>@ SO-8 Part Marking Information (;$03/(7+,6,6$1,5) 026)(7 ,17(51$7,21$/ 5(&7,),(5 /2*2 ;;;; ) '$7(&2'( <:: 3 ',6*1$7(6/($')5(( 352'8&7 237,21$/ < /$67',*,72)7+(<($5 :: :((. $ $66(0%/<6,7(&2'( /27&2'( 3$57180%(5 Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ www.irf.com 7 IRF7380PbF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 31mH RG = 25, IAS = 2.2A. Pulse width 400s; duty cycle 2%. When mounted on 1 inch square copper board. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. ISD 2.2A, di/dt 220A/s, VDD V(BR)DSS,TJ 150C. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.07/2008 8 www.irf.com