www.irf.com 1
07/09/08
IRF7380PbF
HEXFET® Power MOSFET
lHigh frequency DC-DC converters
lLead-Free
Benefits
Applications
lLow Gate to Drain Charge to Reduce
Switching Losses
lFully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
lFully Characterized Avalanche Voltage
and Current
Notes through are on page 8
SO-8
VDSS RDS(on) max ID
80V 73m
:
@VGS = 10V 3.6A
D1
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
45
6
7
Absolute Maximum Ratin
g
s
Parameter Units
VDS Drain-to-Source Voltage V
VGS Gate-to-Source Voltage
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V
ID @ TA = 100°C Continuous Drain Current, VGS @ 10V A
IDM Pulsed Drain Current
c
PD @TA = 25°C Maximum Power Dissipation W
Linear Derating Factor W/°C
dv/dt Peak Diode Recover
y
dv/dt
e
V/ns
TJ Operating Junction and °C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
RθJL Junction-to-Drain Lead ––– 42 °C/W
RθJA Junction-to-Ambient (PCB Mount) * ––– 50
2.3
2.0
-55 to + 150
Max.
3.6
h
2.9
29
80
± 20
0.02
PD - 95723A
IRF7380PbF
2www.irf.com
S
D
G
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
V(BR)DSS Drain-to-Source Breakdown Voltage 80 ––– ––– V
∆V(BR)DSS
/
∆TJ Breakdown Voltage Temp. Coefficient ––– 0.09 ––– V/°C
RDS(on) Static Drain-to-Source On-Resistance ––– 61 73 mΩ
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V
IDSS Drain-to-Source Leakage Current ––– ––– 20 µA
––– ––– 250
IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA
Gate-to-Source Reverse Leakage ––– ––– -200
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
gfs Forward Transconductance 4.3 ––– ––– S
QgTotal Gate Charge ––– 15 23
Qgs Gate-to-Source Charge ––– 2.9 ––– nC
Qgd Gate-to-Drain ("Miller") Charge ––– 4.5 –––
td(on) Turn-On Delay Time ––– 9.0 –––
trRise Time ––– 10 –––
td(off) Turn-Off Delay Time ––– 41 ––– ns
tfFall Time ––– 17 –––
Ciss Input Capacitance ––– 660 –––
Coss Output Capacitance ––– 110 –––
Crss Reverse Transfer Capacitance ––– 15 ––– pF
Coss Output Capacitance ––– 710 –––
Coss Output Capacitance ––– 72 –––
Coss eff. Effective Output Capacitance ––– 140 –––
Avalanche Characteristics
Parameter Units
EAS Sin
g
le Pulse Avalanche Ener
gy
dh
mJ
IAR Avalanche Current
c
A
Diode Characteristics
Parameter Min. Typ. Max. Units
ISContinuous Source Current ––– ––– 3.6 A
(Body Diode)
ISM Pulsed Source Current ––– ––– 29 A
(
Bod
y
Diode
)
ch
VSD Diode Forward Voltage ––– ––– 1.3 V
trr Reverse Recovery Time ––– 50 ––– ns
Qrr Reverse Recovery Charge ––– 110 ––– nC
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Typ.
–––
–––
Conditions
VDS = 25V, ID = 2.2A
ID = 2.2A
VDS = 40V
Conditions
VGS = 10V
f
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
75
2.2
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 2.2A, VGS = 0V
f
TJ = 25°C, IF = 2.2A, VDD = 40V
di/dt = 100A/µs
f
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 2.2A
f
VDS = VGS, ID = 250µA
VDS = 80V, VGS = 0V
VDS = 64V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
Max.
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 64V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 64V
g
VGS = 10V
f
VDD = 40V
ID = 2.2A
RG = 24Ω
IRF7380PbF
www.irf.com 3
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance
Vs. Temperature
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
V =
I =
GS
D
10V
3.6A
3.0 4.0 5.0 6.0 7.0
VGS, Gate-to-Source Voltage (V)
0
1
10
100
ID, Drain-to-Source Current (Α)
TJ = 25°C
TJ = 150°C
VDS = 15V
20µs PULSE WIDTH
0.1 110 100 1000
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
ID, Drain-to-Source Current (A)
3.7V
20µs PULSE WIDTH
Tj = 150°C
VGS
TOP 15V
10V
7.0V
5.0V
4.5V
4.3V
4.0V
BOTTOM 3.7V
0.1 110 100 1000
VDS, Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
10
100
ID, Drain-to-Source Current (A)
3.7V
20µs PULSE WIDTH
Tj = 25°C
VGS
TOP 15V
10V
7.0V
5.0V
4.5V
4.3V
4.0V
BOTTOM 3.7V
TJ, Junction Temperature (°C)
RDS(on), Drain-to-Source On Resistance
(Normalized)
IRF7380PbF
4www.irf.com
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
0.0 0.5 1.0 1.5 2.0
V = 0 V
GS
T = 150 C
J°
T = 25 C
J°
1 10 100 1000
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 150°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
Fig 8. Maximum Safe Operating Area
110 100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
10000
100000
C, Capacitance(pF)
VGS
= 0V, f = 1 MHZ
Ciss
= C
gs
+ C
gd, C
ds
SHORTED
Crss
= C
gd
Coss
= C
ds
+ C
gd
Coss
Crss
Ciss
0 2 4 6 8 10 12 14 16
QG Total Gate Charge (nC)
0
2
4
6
8
10
12
VGS, Gate-to-Source Voltage (V)
VDS= 64V
VDS= 40V
VDS= 16V
ID= 2.1A
VSD, Source-to-Drain Voltage (V)
ISD, Reverse Drain Current (A)
IRF7380PbF
www.irf.com 5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
-
VDD
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
25 50 75 100 125 150
0.0
1.0
2.0
3.0
4.0
I , Drain Current (A)
D
TA , Ambient Temperature (°C)
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Notes :
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRF7380PbF
6www.irf.com
Fig 13. On-Resistance Vs. Gate Voltage
Fig 12. On-Resistance Vs. Drain Current
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
VGS
Q
G
Q
GS
Q
GD
V
G
Charge
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
25 50 75 100 125 150
0
40
80
120
160
200
ID
TOP
BOTTOM
1.0A
1.8A
2.2A
0 5 10 15 20 25 30
ID , Drain Current (A)
50
55
60
65
70
75
80
85
90
95
RDS (on) , Drain-to-Source On Resistance (mΩ)
VGS = 10V
3.0 5.0 7.0 9.0 11.0 13.0 15.0
VGS, Gate -to -Source Voltage (V)
0
100
200
300
400
500
600
700
800
RDS(on), Drain-to -Source On Resistance (mΩ)
ID = 3.6A
Starting TJ, Junction Temperature (°C)
EAS, Single Pulse Avalanche Energy (mJ)
IRF7380PbF
www.irf.com 7
SO-8 Package Outline(Mosfet & Fetky)
H
'
(
\
E
$
$
+
.
/




%$6,&























%$6,&








0,1 0$;
0,//,0(7(56,1&+(6
0,1 0$;
',0

H
F  
%$6,& %$6,&


' %
(
$
H
;
+
>@ $
.[
;/ ;F
\
>@ & $ %
H $
$
;E
&
>@

)22735,17
;>@
>@
;>@ ;
>

@
287/,1(&21)250672-('(&287/,1(06$$
127(6
',0(16,21,1*72/(5$1&,1*3(5$60(<0
&21752//,1*',0(16,210,//,0(7(5
',0(16,216$5(6+2:1,10,//,0(7(56>,1&+(6@
',0(16,21'2(6127,1&/8'(02/'3527586,216
',0(16,21'2(6127,1&/8'(02/'3527586,216
02/'3527586,21612772(;&(('>@
',0(16,21,67+(/(1*7+2)/($')2562/'(5,1*72
$68%675$7(
02/'3527586,21612772(;&(('>@
Dimensions are shown in milimeters (inches)
SO-8 Part Marking Information
3 ',6*1$7(6/($')5((
(;$03/(7+,6,6$1,5)026)(7
)
;;;;
,17(51$7,21$/
/2*2
5(&7,),(5
3$57180%(5
/27&2'(
352'8&7237,21$/
'$7(&2'(<::
< /$67',*,72)7 +(<($5
:: :((.
$ $66(0%/<6,7( &2'(
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
IRF7380PbF
8www.irf.com
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.07/2008
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 31mH
RG = 25Ω, IAS = 2.2A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Notes:
When mounted on 1 inch square copper board.
Coss eff. is a fixed capacitance that gives the same charging time as
Coss while VDS is rising from 0 to 80% VDSS.
ISD ≤ 2.2A, di/dt ≤ 220A/µs, VDD ≤ V(BR)DSS,TJ ≤ 150°C.