2011-10-05
1
BCV28, BCV48
1
2
2
3
PNP Silicon Darlington Transistors
• For general AF applications
• High collector current
• High current gain
• Complementary types: BCV29, BCV49 (NPN)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Type Marking Pin Configuration Package
BCV28
BCV48
ED
EE
1=B
1=B
2=C
2=C
3=E
3=E
SOT89
SOT89
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
BCV28
BCV48
VCEO
30
60
V
Collector-base voltage
BCV28
BCV48
VCBO
40
80
Emitter-base voltage VEBO 10
Collector current IC500 mA
Peak collector current, tp ≤ 10 ms ICM 800
Base current IB100
Peak base current IBM 200
Total power dissipation-
TS ≤ 130 °C
Ptot 1 W
Junction temperature Tj150 °C
Storage temperature Tst
g
-65 ... 150
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BCV28, BCV48
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS ≤ 20 K/W
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0 , BCV28
IC = 10 mA, IB = 0 , BCV48
V(BR)CEO
30
60
-
-
-
-
V
Collector-base breakdown voltage
IC = 100 µA, IE = 0 , BCV28
IC = 100 µA, IE = 0 , BCV48
V(BR)CBO
40
80
-
-
-
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO 10 - -
Collector-base cutoff current
VCB = 30 V, IE = 0 , BCV28
VCB = 60 V, IE = 0 , BCV48
VCB = 30 V, IE = 0 , TA ≤ 150 °C, BCV28
VCB = 60 V, IE = 0 , TA ≤ 150 °C, BCV48
ICBO
-
-
-
-
-
-
-
-
0.1
0.1
10
10
µA
Emitter-base cutoff current
VEB = 4 V, IC = 0
IEBO - - 100 nA
DC current gain1)
IC = 10 µA, VCE = 1 V, BCV28
IC = 10 µA, VCE = 1 V, BCV48
IC = 10 mA, VCE = 5 V, BCV28
IC = 10 mA, VCE = 5 V, BCV48
IC = 100 mA, VCE = 5 V, BCV28
IC = 100 mA, VCE = 5 V, BCV48
IC = 0.5 A, VCE = 5 V, BCV28
IC = 0.5 A, VCE = 5 V, BCV48
hFE
4000
2000
10000
4000
20000
10000
4000
2000
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Collector-emitter saturation voltage1)
IC = 100 mA, IB = 0.1 mA
VCEsat - - 1 V
Base emitter saturation voltage1)
IC = 100 mA, IB = 0.1 mA
VBEsat - - 1.5
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BCV28, BCV48
1Pulse test: t < 300µs; D < 2%
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 5 V, f = 100 MHz
fT- 200 - MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Ccb - 4.5 - pF
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BCV28, BCV48
DC current gain hFE = ƒ(IC)
VCE = 5 V
10
EHP00316BCV 28/48
-1 3
10mA
3
10
6
10
5
5
100101
104
C
FE
h
Ι
2
10
5
10 ˚C
125
5
25
˚C
-55
˚C
Collector-emitter saturation voltage
IC = ƒ(VCEsat), hFE = 1000
0
10
EHP00313BCV 28/48
CEsat
V
1.5
0
3
10
Ι
C
mA
0.5 1.0
1
10
2
10
˚C
V
5
5
150
25
˚C
-50
˚C
Base-emitter saturation voltage
IC = ƒ(VBEsat), hFE = 1000
0
10
EHP00314BCV 28/48
BEsat
V
3.0
0
3
10
Ι
C
mA
1.0 2.0
1
10
2
10
˚C
V
5
5
150
25
˚C
-50
˚C
Collector cutoff current ICBO = ƒ(TA)
VCB = VCEmax
0
10
EHP00309BCV 28/48
A
T
150
0
4
10
Ι
CBO
nA
50 100
1
10
2
10
3
10
˚C
max
typ
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BCV28, BCV48
Transition frequency fT = ƒ(IC)
VCE = 5 V
10
EHP00312BCV 28/48
03
10mA
1
10
3
10
5
101102
102
C
T
fMHz
Ι
Collector-base capacitance Ccb = ƒ(VCB)
Emitter-base capacitance Ceb = ƒ(VEB)
0 4 8 12 16 V22
VCB(VEB
0
2
4
6
8
10
12
pF
16
CCB(CEB)
CCB
CEB
Total power dissipation Ptot = ƒ(TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
200
400
600
800
mW
1200
Ptot
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
10
EHP00310BCV 28/48
-6 -5
10 0
10s
0
10
2
10
5
5
10-4 10-3 10-2
101
5
0
0.5
0.2
0.1
0.05
0.02
0.01
0.005
=
D
totmax
tot
PDC
P
p
t
tp
=
DT
tp
T
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BCV28, BCV48
Package SOT89
Reel ø180 mm = 1.000 Pieces/Reel
Reel ø330 mm = 4.000 Pieces/Reel
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
0.8
0.8
2.0
1.01.2 2.5
0.7
0.45
+0.2
1) Ejector pin markings possible
1.5
30.2
-0.1
B
0.25
1)
±0.05
45˚
0.15
2.5
±0.1
4
±0.25
M
B
B
0.15
±0.1
0.35
±0.2
1MAX.
10˚
1.5
±0.1
±0.2
1.6
-0.15
+0.1
2.75
±0.1
4.5
±0.1
1
x3
0.2 MAX.
1)
123
80.2
4.3 1.6
4.6
12
Pin 1
2005, June
Date code (YM)
BAW78D
Type code
Pin 1
Manufacturer
2011-10-05
7
BCV28, BCV48
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
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The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
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only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
