2011-10-05
1
BCV28, BCV48
1
2
2
3
PNP Silicon Darlington Transistors
For general AF applications
High collector current
High current gain
Complementary types: BCV29, BCV49 (NPN)
Pb-free (RoHS compliant) package
Qualified according AEC Q101
Type Marking Pin Configuration Package
BCV28
BCV48
ED
EE
1=B
1=B
2=C
2=C
3=E
3=E
SOT89
SOT89
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
BCV28
BCV48
VCEO
30
60
V
Collector-base voltage
BCV28
BCV48
VCBO
40
80
Emitter-base voltage VEBO 10
Collector current IC500 mA
Peak collector current, tp 10 ms ICM 800
Base current IB100
Peak base current IBM 200
Total power dissipation-
TS 130 °C
Ptot 1 W
Junction temperature Tj150 °C
Storage temperature Tst
g
-65 ... 150
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BCV28, BCV48
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS 20 K/W
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0 , BCV28
IC = 10 mA, IB = 0 , BCV48
V(BR)CEO
30
60
-
-
-
-
V
Collector-base breakdown voltage
IC = 100 µA, IE = 0 , BCV28
IC = 100 µA, IE = 0 , BCV48
V(BR)CBO
40
80
-
-
-
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO 10 - -
Collector-base cutoff current
VCB = 30 V, IE = 0 , BCV28
VCB = 60 V, IE = 0 , BCV48
VCB = 30 V, IE = 0 , TA 150 °C, BCV28
VCB = 60 V, IE = 0 , TA 150 °C, BCV48
ICBO
-
-
-
-
-
-
-
-
0.1
0.1
10
10
µA
Emitter-base cutoff current
VEB = 4 V, IC = 0
IEBO - - 100 nA
DC current gain1)
IC = 10 µA, VCE = 1 V, BCV28
IC = 10 µA, VCE = 1 V, BCV48
IC = 10 mA, VCE = 5 V, BCV28
IC = 10 mA, VCE = 5 V, BCV48
IC = 100 mA, VCE = 5 V, BCV28
IC = 100 mA, VCE = 5 V, BCV48
IC = 0.5 A, VCE = 5 V, BCV28
IC = 0.5 A, VCE = 5 V, BCV48
hFE
4000
2000
10000
4000
20000
10000
4000
2000
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Collector-emitter saturation voltage1)
IC = 100 mA, IB = 0.1 mA
VCEsat - - 1 V
Base emitter saturation voltage1)
IC = 100 mA, IB = 0.1 mA
VBEsat - - 1.5
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BCV28, BCV48
1Pulse test: t < 300µs; D < 2%
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 5 V, f = 100 MHz
fT- 200 - MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Ccb - 4.5 - pF
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BCV28, BCV48
DC current gain hFE = ƒ(IC)
VCE = 5 V
10
EHP00316BCV 28/48
-1 3
10mA
3
10
6
10
5
5
100101
104
C
FE
h
Ι
2
10
5
10 ˚C
125
5
25
˚C
-55
˚C
Collector-emitter saturation voltage
IC = ƒ(VCEsat), hFE = 1000
0
10
EHP00313BCV 28/48
CEsat
V
1.5
0
3
10
Ι
C
mA
0.5 1.0
1
10
2
10
˚C
V
5
5
150
25
˚C
-50
˚C
Base-emitter saturation voltage
IC = ƒ(VBEsat), hFE = 1000
0
10
EHP00314BCV 28/48
BEsat
V
3.0
0
3
10
Ι
C
mA
1.0 2.0
1
10
2
10
˚C
V
5
5
150
25
˚C
-50
˚C
Collector cutoff current ICBO = ƒ(TA)
VCB = VCEmax
0
10
EHP00309BCV 28/48
A
T
150
0
4
10
Ι
CBO
nA
50 100
1
10
2
10
3
10
˚C
max
typ
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BCV28, BCV48
Transition frequency fT = ƒ(IC)
VCE = 5 V
10
EHP00312BCV 28/48
03
10mA
1
10
3
10
5
101102
102
C
T
fMHz
Ι
Collector-base capacitance Ccb = ƒ(VCB)
Emitter-base capacitance Ceb = ƒ(VEB)
0 4 8 12 16 V22
VCB(VEB
0
2
4
6
8
10
12
pF
16
CCB(CEB)
CCB
CEB
Total power dissipation Ptot = ƒ(TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
200
400
600
800
mW
1200
Ptot
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
10
EHP00310BCV 28/48
-6 -5
10 0
10s
0
10
2
10
5
5
10-4 10-3 10-2
101
5
0
0.5
0.2
0.1
0.05
0.02
0.01
0.005
=
D
totmax
tot
PDC
P
p
t
tp
=
DT
tp
T
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BCV28, BCV48
Package SOT89
Reel ø180 mm = 1.000 Pieces/Reel
Reel ø330 mm = 4.000 Pieces/Reel
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
0.8
0.8
2.0
1.01.2 2.5
0.7
0.45
+0.2
1) Ejector pin markings possible
1.5
30.2
-0.1
B
0.25
1)
±0.05
45˚
0.15
2.5
±0.1
4
±0.25
M
B
B
0.15
±0.1
0.35
±0.2
1MAX.
10˚
1.5
±0.1
±0.2
1.6
-0.15
+0.1
2.75
±0.1
4.5
±0.1
1
x3
0.2 MAX.
1)
123
80.2
4.3 1.6
4.6
12
Pin 1
2005, June
Date code (YM)
BAW78D
Type code
Pin 1
Manufacturer
2011-10-05
7
BCV28, BCV48
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
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of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
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For information on the types in question, please contact the nearest Infineon
Technologies Office.
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