2SK3728-01MR 200305 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Isolation Voltage Symbol Ratings V DS 900 VDSX *5 900 ID 2.2 ID(puls] 8.8 VGS 30 IAR *2 2.2 EAS *1 127.2 dVDS/dt *4 40 dV/dt *3 5 PD Ta=25C 2.16 Tc=25C 26 Tch +150 -55 to +150 Tstg VISO *6 2000 Unit V V A A V A mJ kV/s kV/s W Equivalent circuit schematic Drain(D) Gate(G) Source(S) C C Vrms *1 L=48.2mH, Vcc=90V, Tch=25C See to Avalanche Energy Graph *2 Tch < =150C *3 IF< = BVDSS, Tch < = 150C *4 VDS<= 900V *5 VGS=-30V *6 f=60Hz, t=6-sec. = -ID, -di/dt=50A/s, Vcc < Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS VDS=900V VGS=0V Tch=25C Tch=125C VDS=720V VGS=0V VGS=30V VDS=0V ID=1.1A VGS=10V ID=1.1A VDS=25V Min. 1.1 VDS =25V VGS=0V f=1MHz VCC=600V ID=1.1A VGS=10V RGS=10 VCC =450V ID=2.2A VGS=10V L=48.2mH Tch=25C IF=2.2A VGS=0V Tch=25C IF=2.2A VGS=0V -di/dt=100A/s Tch=25C Typ. 900 3.0 6.15 2.2 250 36 2.2 17 6 26 28 8.3 3.4 2.2 Max. 5.0 25 250 100 8.00 375 55 3.3 26 9 39 42 12.5 5.1 3.3 2.2 0.90 0.8 2.2 1.50 Units V V A nA S pF ns nC A V s C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient http://store.iiic.cc/ Min. Typ. Max. 4.808 58.0 Units C/W C/W 1 2SK3728-01MR FUJI POWER MOSFET Characteristics Allowable Power Dissipation PD=f(Tc) 30 Typical Output Characteristics ID=f(VDS):80 s pulse test,Tch=25C 20V 2.5 25 2.0 6.0V ID [A] PD [W] 20 15 10V 7.0V 6.5V 1.5 10 1.0 5 0.5 VGS=5.5V 0 0 25 50 75 100 125 0.0 150 0 5 10 Tc [C] Typical Transfer Characteristic ID=f(VGS):80 s pulse test,VDS=25V,Tch=25C 10 20 Typical Transconductance gfs=f(ID):80 s pulse test,VDS=25V,Tch=25C 1 gfs [S] ID[A] 10 15 VDS [V] 1 0.1 0 1 2 3 4 5 6 7 8 9 0.1 10 1 VGS[V] 8.5 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 s pulse test,Tch=25C VGS=5.5V 10 ID [A] 25.0 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=1.1A,VGS=10V 6.0V 22.5 6.5V 8.0 7.0V 20.0 17.5 20V 7.5 RDS(on) [ ] RDS(on) [ ] 10V 7.0 6.5 15.0 12.5 max. 10.0 7.5 typ. 5.0 6.0 2.5 5.5 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 25 50 75 100 125 150 Tch [C] ID [A] http://store.iiic.cc/ 2 2SK3728-01MR 7.0 FUJI POWER MOSFET Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250A Typical Gate Charge Characteristics VGS=f(Qg):ID=2.2A,Tch=25C 14 6.5 6.0 12 Vcc= 180V 450V 720V 5.5 max. 10 4.5 4.0 VGS [V] VGS(th) [V] 5.0 3.5 min. 3.0 8 6 2.5 2.0 4 1.5 1.0 2 0.5 0.0 0 -50 -25 0 25 50 75 100 125 150 0 2 4 6 Tch [C] 8 10 12 14 Qg [nC] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 10 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 s pulse test,Tch=25C 0 10 Ciss IF [A] -1 C [nF] 10 Coss 10 -2 10 -3 Crss 0 10 1 0.1 2 10 1 0.00 10 0.25 0.50 0.75 10 3 1.00 1.25 1.50 VSD [V] VDS [V] Typical Switching Characteristics vs. ID t=f(ID):Vcc=600V,VGS=10V,RG=10 300 Maximum Avalanche Energy vs. starting Tch E(AS)=f(starting Tch):Vcc=90V IAS=1.0A 250 tf 10 2 IAS=1.4A 200 EAS [mJ] t [ns] td(off) td(on) 10 1 150 IAS=2.2A 100 tr 50 10 0 10 -1 10 0 0 0 25 50 75 100 125 150 starting Tch [C] ID [A] http://store.iiic.cc/ 3 Avalanche Current I AV [A] 2SK3728-01MR 10 2 10 1 FUJI POWER MOSFET Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25C,Vcc=90V Single Pulse 10 10 0 -1 -2 10 -8 10 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 Zth(ch-c) [C/W] tAV [sec] 10 2 10 1 10 0 10 -1 10 -2 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] http://www.fujielectric.co.jp/denshi/scd/ http://store.iiic.cc/ 4