1
TO-220F
Item Symbol Ratings Unit
Drain-source voltage V DS 900
VDSX *5 900
Continuous drain current ID±2.2
Pulsed drain current ID(puls] ±8.8
Gate-source voltage VGS ±30
Repetitive or non-repetitive IAR *2 2.2
Maximum Avalanche Energy EAS *1 127.2
Maximum Drain-Source dV/dt dVDS/dt *4 40
Peak Diode Recovery dV/dt dV/dt *3 5
Max. power dissipation PD Ta=25°C 2.16
Tc=25°C 26
Operating and storage Tch +150
temperature range Tstg
Isolation Voltage VISO *6 2000
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3728-01MR
FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Symbol Test Conditions
Zero gate voltage drain current IDSS VDS=900V VGS=0V
VDS=720V VGS=0V
VGS=±30V
ID=1.1A VGS=10V
ID=1.1A VDS=25V
VCC=600V ID=1.1A
VGS=10V
RGS=10 Ω
Min. Typ. Max. Units
V
V
µA
nA
Ω
S
pF
nC
A
V
µs
µC
ns
Min. Typ. Max. Units
Thermal resistance Rth(ch-c) channel to case
Rth(ch-a) channel to ambient 4.808
58.0 °C/W
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=25V
VGS=0V
f=1MHz
VCC=450V
ID=2.2A
VGS=10V
L=48.2mH Tch=25°C
IF=2.2A VGS=0V Tch=25°C
IF=2.2A VGS=0V
-di/dt=100A/µs Tch=25°C
V
V
A
A
V
A
mJ
kV/µs
kV/µs
W
°C
°C
Vrms
900
3.0 5.0
25
250
100
6.15 8.00
1.1 2.2
250 375
36 55
2.2 3.3
17 26
69
26 39
28 42
8.3 12.5
3.4 5.1
2.2 3.3
2.2 0.90 1.50
0.8
2.2
-55 to +150
Outline Drawings [mm]
Equivalent circuit schematic
Super F AP-G Series
*3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C
=
<=
<=
<
Gate(G)
Source(S)
Drain(D)
200305
*4 VDS 900V *5 VGS=-30V *6 f=60Hz, t=6-sec.
<
=
*1 L=48.2mH, Vcc=90V, Tch=25°C See to Avalanche Energy Graph *2 Tch 150°C
=
<
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Characteristics
2SK3728-01MR FUJI POWER MOSFET
0 5 10 15 20
0.0
0.5
1.0
1.5
2.0
2.5 20V 7.0V
10V
6.5V
6.0V
ID [A]
VDS [V]
Typical Output Characteristic s
ID=f(VDS):80 µs pulse test,Tch=25°C
VGS=5.5V
012345678910
0.1
1
10
ID[A]
VGS[V]
Typical Transfer Characteristic
ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C
0.1 1 10
1
10
gfs [S]
ID [A]
Typical Trans conduc tance
gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C
0.0 0.5 1.0 1.5 2.0 2.5 3.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
6.5V
RDS(on) [ Ω ]
ID [A]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 µs pul se test,Tch=2 5°C
10V
20V
7.0V
6.0V
VGS=5.5V
-50 -25 0 25 50 75 100 125 150
0.0
2.5
5.0
7.5
10.0
12.5
15.0
17.5
20.0
22.5
25.0
RDS(o n) [ Ω ]
Tch [°C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=1.1A,VGS=10V
0 25 50 75 100 125 150
0
5
10
15
20
25
30
Allowable Power Dissi pati on
PD=f(Tc)
PD [W]
Tc [°C]
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2SK3728-01MR FUJI POWER MOSFET
-50 -25 0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250µA
VGS(th) [V]
Tch [°C] 0 2 4 6 8 10 12 14
0
2
4
6
8
10
12
14
Qg [nC]
Typical Gate Charge Charact e ri st i c s
VGS=f(Qg):ID=2.2A,Tch=25°C
VGS [V]
720V
450V
Vcc= 180V
100101102
10-3
10-2
10-1
100
C [nF]
VDS [V]
Typical Capacit ance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00 0.25 0.50 0.75 1.00 1.25 1.50
0.1
1
10
IF [A]
VSD [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 µs pulse test,Tch=25 °C
10-1 100
100
101
102
103
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=600V,VGS=10V,RG=10Ω
td(on)
tr
tf
td(off)
t [ns]
ID [A]
0 25 50 75 100 125 150
0
50
100
150
200
250
300 IAS=1.0A
IAS=2.2A
IAS=1.4A
EAS [mJ]
starting Tch [°C]
Maximum Avalanche Energy vs. starting Tch
E(AS)=f(starting Tch):Vcc=90V
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2SK3728-01MR FUJI POWER MOSFET
http://www.fujielectric.co.jp/denshi/scd/
10-8 10-7 10-6 10-5 10-4 10-3 10-2
10-2
10-1
100
101
102
Singl e Pu lse
M aximum Avalanche Current Pulsewidth
IAV=f(tAV):starting Tch=25°C,Vcc=90V
Av al anc he Cu rre n t I AV [A]
tAV [sec]
10-6 10-5 10-4 10-3 10-2 10-1 100
10-2
10-1
100
101
102
Maximum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
Zth(ch-c) [°C/W]
t [sec]
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