MV 21 01 (SILICON) thru MV2115 VVC IE SILICON EPICAP DIODES . . . designed in the popular PLASTIC PACKAGE for high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning apptications; providing solid-state reliability in replacement of mechanical tuning methods. @ High Q with Guaranteed Minimum Values Controlled and Uniform Tuning Ratio @ Standard Capacitance Tolerance ~ 10% @ Complete Typical Design Curves VOLTAGE-VARIABLE CAPACITANCE DIODES 6.8-100 pF 30 VOLTS MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 30 Volts Forward Current ip 200 mA Device Dissipation @ Tq = 25C Po 280 mw Derate above 25C 28 mw/ec Junction Temperature Ty +125 % Storage Temperature Range Tstg ~65 to +150 oe 1425 A Te! SEATING = PLANE? | K STYLE 1 CASE 182-03 MV2101 thru MV2115 (continued) ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted) CharacteristicAll Types Symbol Min Typ Max Unit Reverse Breakdown Voltage BVR 30 _ 7 Vde (Ig = 10 pAdc} Reverse Voltage Leakage Current IR _ > 0.10 Adc (Vp = 25 Vde, Ta = 26C) Series Inductance bs ~ 6.0 - nH (f = 250 MHz,Lead length ~ 1/16") Case Capacitance Co _ 0.18 _ pF (f = 1.0 MHz, Lead Length = 1/16") Diode Capacitance Temperature Coefficient To _ 280 400 ppm/C (VR = 4.0 Vdc, f = 1.0 MHz) Cy, Diode Capacitance Q, Figure of Merit TR, Tuning Ratio VR = 4.0 Vac, f = 1.0 MHz VR = 4.0 Vdc, C2/C39 pF f = 50 MHz f= 1.0 MHz Device Min Nom Max Min Min Typ Max MV 2101 6.1 6.8 7.5 450 2.6 2.7 3.2 MV 2102 7.4 8.2 9.0 450 2.5 2.8 3.2 MV2103 9.0 10.0 11.0 400 25 2.9 3.2 MV 2104 10.8 12.0 13.2 400 2.5 2.9 3.2 MV 2105 13.5 15.0 16.5 400 it 25 2.9 3.2 MV 2106 16.2 18.0 19.8 350 ; 25 2.9 3.2 MV2107 19.8 22.0 24.2 350 2.5 2.9 3.2 MV2108 24.3 27.0 29.7 300 2.5 3.0 3.2 MV2109 29.7 33.0 36.3 200 25 3.0 3.2 MV2110 35.1 39.0 42.9 150 2.5 3.0 3.2 MV2111 42.3 47.0 51.7 150 2.5 3.0 3.2 MV2112 50.4 56.0 61.6 150 2.6 3.0 3.3 MV2113 61.2 68.0 74.8 150 2.6 3.0 3.3 MV2114 73.8 82.0 90.2 400 2.6 3.0 3.3 MV2115 90.0 100.0 1710.0 400 2.6 3.0 3.3 = 4. PARAMETER TEST METHODS . Lg, SERIES INDUCTANCE Lg is measured on a shorted package at 250 MHz using an impedance bridge (Boonton Radio Model 250A RX Meter). . Cc, CASE CAPACITANCE Cc is measured on an open package at 1.0 MHz using acapacitance bridge (Boonton Electronics Mode! 75A or equivalent). Cr, DIODE CAPACITANCE {Cy = Co + Cy). Cry is measured at 1.0 MHz using a capacitance bridge (Boonton Electronics Mode! 75A or equivatent). TR, TUNING RATIO TR is the ratio of CT measured at 2.0 Vdc divided by C7 measured at 30 Vdc. 1426 . OQ, FIGURE OF MERIT Q is calculated by taking the G and C readings of an admittance bridge at the specified frequency and substituting in the following equations: _ 2afC G Q {Boonton Electronics Model 33AS8}. Use Lead Length 1/16". . To, DIODE CAPACITANCE TEMPERATURE COEFFICIENT TCg is guaranteed by comparing Cr at VR = 4.0 Vde, f = 1.0 MHz, Ta = -65C with Cr at VR = 4.0 Vide, f = 1.0 MHz, Ta = +85C in the fotlowing equation which defines TCe: Cyr(+85C) Cy{~65C) 106 85 + 65 CR(25C) Tec = Cp (25ec) Accuracy limited by measurement of Cy to + 0.1 pF. MV2101 thru MV2115 (continued) TYPICAL DEVICE PERFORMANCE FIGURE 1 DIODE CAPACITANCE versus REVERSE VOLTAGE 40 30 Vp, REVERSE VOLTAGE (VOLTS} Ta = 25C f= 1.0 MHz z= Mv2116 2s w 12 3 z < & 3 < = & w Mv2101 a o a E Oo ol o4 10 FIGURE 2 NORMALIZED DIODE CAPACITANCE versus JUNCTION TEMPERATURE 1.040 w 1.030 VR=20V o a 1.020 < VaR=4.0V = 1.010 oO w 8 1.000 Va=30V a i 0.990 N z NORMALIZED TO Ct a = 0.980 at Ta = 25C 2 4970 Vp = (CURVE) 0.960 75 50-28 Q 25 50 78 100128 Tj, JUNCTION TEMPERATURE (C) FIGURE 4 FIGURE OF MERIT versus REVERSE VOLTAGE 4000 3000 2000 Mv2101 1000 500 300 200 100 Ta = 25C t= 50 MHz Q, FIGURE OF MERIT 50 30 20 10 5.0 10 VR, REVERSE VOLTAGE (VOLTS) 30 _ FIGURE 3 REVERSE CURRENT versus REVERSE BIAS VOLTAGE 100 50 Ta = 125C 20 19 5.0 2.0 1.0 0.50 Ta = 7590 0.20 0.10 0.05 0.02 0.01 Ip, REVERSE CURRENT (nA) 10 15 20 Vp, REVERSE VOLTAGE (VOLTS) 25 30 FIGURE S FIGURE OF MERIT versus FREQUENCY 4000 3000 2000 1000 500 300 200 100 Ta = 25C VR = 4.0 Vde Q, FIGURE OF MERIT 50 f, FREQUENCY (MHz) 1427 MV2101 thru MV2115 (continued) EPICAP VOLTAGE-VARIABLE CAPACITANCE DIODE DEVICE CONSIDERATIONS A. Epicap Network Presentation FIGURE 6 The equivalent circuit in Figure 6 shows the voltage capacitance NO and parasitic elements of an EPICAP diode. For design purposes at Cc /jI all but very high and very low frequencies, Ls, Ry, and Cc can be Co yw neglected. The simplified equivalent circuit of Figure 7 represents the diode under these conditions. Definitions: Rw As is Cy Voltage-Variable Junction Capacitance o oad We O Rg Series Resistance (semiconductor bulk, contact, and lead resistance) FIGURE 7 Co - Case Capacitance Cy ur Rs Lg Series Inductance oO 5 MA oO Ry Voltage-Variable Junction Resistance (negligible above aN 100 kHz) B. Epicap Capacitance versus Reverse Bias Voltage Cr=CotCy (1) The most important design characteristic of an EPICAP diode is the Cr versus Vp variation as shown in equations t and 2. Tuning Cr=Ccot+ Ratio, TR, between any two voltage paints on curve of equation (2) (: + VA y (2) is determined from equations (3) and (4). } _ S31 fVR2t C. Epicap Capacitance versus Frequency TR Junction = = (2) (3) Variations in EPICAP effective capacitance, as a function of oper- x2 Vai te sting frequency, can be derived from a simplified equivalent circuit Crs Cy, +c similar to that of Figure 6, but neglecting Rg and Ry. The admittance TR Diode = -__ expression for such a circuit is given in equation 5. Examination of T2 Cy2+Cc 4) equation 5 yields the following information: Conditions: At low frequencies, Cgg =* Cy: at very high frequencies (f == } Co =Cyat VR =0 Ceq = Cc. VR = Reverse Bias (Volts) As frequency is increased from 1.0 MHz, Cag increases until it is +, Diode Power Law, ~ 0.44 maximum st w2 = 1/LgCy; and as w2 is increased from 1/LgCy $, Contact Potential, = 0.6 Volt toward infinity, Cag increases from a very negative capacitance Co 0.18 pF (inductance) toward Cag = Cc, a positive capacitance. joCy Very simple calculations for Ceq at higher frequencies indicate = jwCeg = jwlg + (5) the problems encountered when capacity measurements are made 1-wlgCy above 1.0 MHz. As w approaches wo = 14{LgCy, small variations in Lg cause extreme variations in measured diode capacitance. x D. EPICAP Figure of Merit (OQ) and Cutoff Frequency (feg) = = (6) The efficiency of EPICAP response to an input frequency is re- ed lated to the Figure of Merit of the device as defined in equation 6. For very low frequencies, equation 7 applies whereas at high fre- quencies, where Ry can be neglected, equation 6 may be rewritten wCjRy2 aut = --_-- mm Ry + Ag lt + w2Cy2Ry2 into the familiar form of equation 8. One = _ {8} Another useful parameter for EPICAP devices is the cutoff fre- wRsCeq quency (feo), and is the frequency point where Q is equal to 1. 1 Equation 9 gives this relationship. {co = Ofmeas 2nAsCavr (9) E. Harmonic Generation Using EPICAPS M(BVR +0)? fin (901 Efficient harmonic generation is possible with EPICAPS Pintmax) * Rs fco because of their high cutoff frequency and breakdown voltage. Sinte EPICAP junction capacitance varies inversely with the square M(x2} = 0.0285; M(x3} = 0.0241; M(x4) = 0.196 root of the breakdown voltage, harmonic generator performance can fout be accurately predicted from various idealized models. Equation 10 Eff=1N an gives the level of maximum input power for the EPICAP and equation co 11 gives the relationships governing EPICAP circuit efficiency. In N(x2) = 20.8; N(x3) = 34.8; Nix4) = 62.5 these equations, adequate heat sinking has been assumed. M and N are Constants 1428