2N6284-D - ON Semiconductor - Datasheet.Directory

Darlington Complementary

Silicon Power Transistors

. . . designed for general–purpose amplifier and low–frequency

switching applications.

•High DC Current Gain @ IC = 10 Adc –

hFE = 2400 (Typ) – 2N6284

= 4000 (Typ) – 2N6287

•Collector–Emitter Sustaining Voltage –

VCEO(sus) = 100 Vdc (Min)

•Monolithic Construction with Built–In Base–Emitter Shunt

Resistors

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

Symbo

l

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

2N6283

2N6286

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

2N6284

2N6287

ÎÎÎ

Î

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎ

VCEO

ÎÎÎÎÎ

80

ÎÎÎÎÎ

100

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎ

VCB

ÎÎÎÎÎ

80

ÎÎÎÎÎ

100

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎ

VEB

ÎÎÎÎÎÎÎÎÎ

5.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎ

Collector Current – Continuous

Peak

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

IC

ÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎ

20

40

ÎÎÎ

Î

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎÎ

IB

ÎÎÎÎÎÎÎÎÎ

0.5

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎ

Total Device Dissipation @ TC =

25C

Derate above 25C

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

PD

ÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎ

160

0.915

ÎÎÎ

Î

ÎÎÎ

Watts

W/C

ÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

TJ,Tstg

ÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎ

–65 to +200

ÎÎÎ

Î

ÎÎÎ

C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

RθJC

ÎÎÎÎÎÎ

1.09

ÎÎÎ

C/W

*Indicates JEDEC Registered Data.

25 50 100 125 200

Figure 1. Power Derating

TC, CASE TEMPERATURE (°C)

PD, POWER DISSIPATION (WATTS)

160

60

40

140

0 75 150

0

20

80

100

120

175

ON Semiconductor

 Semiconductor Components Industries, LLC, 2001

May, 2001 – Rev. 1 1Publication Order Number:

2N6284/D

DARLINGTON

20 AMPERE

COMPLEMENTARY

SILICON

POWER TRANSISTORS

100 VOLTS

160 WATTS

2N6283

2N6284

2N6286

2N6287

CASE 1–07

TO–204AA

(TO–3)

NPN

PNP

2N6283 2N6284 2N6286 2N6287

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2

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage

(IC = 0.1 Adc, IB = 0) 2N6283, 2N6286

2N6284, 2N6287

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

VCEO(sus)

ÎÎÎ

Î

ÎÎÎ

80

100

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

–

ÎÎÎ

Î

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 40 Vdc, IB = 0)

(VCE = 50 Vdc, IB = 0)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

ICEO

ÎÎÎ

Î

ÎÎÎ

–

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

1.0

ÎÎÎ

Î

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = Rated VCB, VBE(off) = 1.5 Vdc)

(VCE = Rated VCB, VBE(off) = 1.5 Vdc, TC = 150C)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

ICEX

ÎÎÎ

Î

ÎÎÎ

–

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

0.5

5.0

ÎÎÎ

Î

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

IEBO

ÎÎÎ

Î

ÎÎÎ

–

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

2.0

ÎÎÎ

Î

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 10 Adc, VCE = 3.0 Vdc)

(IC = 20 Adc, VCE = 3.0 Vdc)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

hFE

ÎÎÎ

Î

ÎÎÎ

750

100

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

18,000

–

ÎÎÎ

Î

ÎÎÎ

–

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage

(IC = 10 Adc, IB = 40 mAdc)

(IC = 20 Adc, IB = 200 mAdc)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

VCE(sat)

ÎÎÎ

Î

ÎÎÎ

–

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

2.0

3.0

ÎÎÎ

Î

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter On Voltage

(IC = 10 Adc, VCE = 3.0 Vdc)

ÎÎÎÎÎ

VBE(on)

ÎÎÎ

–

ÎÎÎÎ

2.8

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter Saturation Voltage

(IC = 20 Adc, IB = 200 mAdc)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

VBE(sat)

ÎÎÎ

Î

ÎÎÎ

–

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

4.0

ÎÎÎ

Î

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Magnitude of Common Emitter Small–Signal Short–Circuit

Forward Current Transfer Ratio

(IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

|hfe|

ÎÎÎ

Î

ÎÎÎ

4.0

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

–

ÎÎÎ

Î

ÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) 2N6283, 2N6284

2N6286, 2N6287

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

Cob

ÎÎÎ

Î

ÎÎÎ

–

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

400

600

ÎÎÎ

Î

ÎÎÎ

pF

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small–Signal Current Gain

(IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)

ÎÎÎÎÎ

hfe

ÎÎÎ

300

ÎÎÎÎ

–

ÎÎÎ

–

*Indicates JEDEC Registered Data.

(1) Pulse test: Pulse Width = 300 µs, Duty Cycle = 2%

2N6283 2N6284 2N6286 2N6287

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Figure 2. Switching Times Test Circuit

10

0.2

Figure 3. Switching Times

IC, COLLECTOR CURRENT (AMP)

t, TIME (s)µ

7.0

2.0

1.0

0.7

0.5

0.1 0.3 0.7 3.0 20

0.2

1.0 5.0

0.3

3.0

5.0

0.5 2.0 7.0

0

VCC

- 30 V

SCOPE

TUT

+ 4.0 V

tr, tf  10 ns

DUTY CYCLE = 1.0%

RC

D1 MUST BE FAST RECOVERY TYPE e.g.,

1N5825 USED ABOVE IB  100 mA

MSD6100 USED BELOW IB  100 mA

25 µs

D1

51

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

V2

APPROX

+ 8.0 V

V1

APPROX

- 12 V

 8.0 k  50

FOR td AND tr, D1 IS DISCONNECTED

AND V2 = 0

FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES

RB

10

td @ VBE(off) = 0 V

tf

ts

tr

2N6284 (NPN)

2N6287 (PNP)

VCC = 30 Vdc

IC/IB = 250

IB1 = IB2

TJ = 25°C

Figure 4. Thermal Response

t, TIME OR PULSE WIDTH (ms)

1.0

0.01

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.02 0.03

r(t), EFFECTIVE TRANSIENT

THERMAL RESISTANCE (NORMALIZED)

0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1000500

RθJC(t) = r(t) RθJC

RθJC = 1.09°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) RθJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

D = 0.5

SINGLE PULSE

0.2

0.05

0.1

0.02

0.01

0.3 3.0 30 300

2N6283 2N6284 2N6286 2N6287

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4

ACTIVE–REGION SAFE OPERATING AREA

50

Figure 5. 2N6284, 2N6287

20

2.0

0.05 50 100

0.2

5.0

0.5

IC, COLLECTOR CURRENT (AMP)

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

10

1.0

0.1

2.0 5.0 2010

0.1 ms

SECOND BREAKDOWN LIMITED

BONDING WIRE LIMITED

THERMAL LIMITATION @ TC = 25°C

SINGLE PULSE

TJ = 200°C

dc

5.0 ms

1.0 ms

0.5 ms

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC – VCE

limits of the transistor that must be observed for reliable

operation; i.e. the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 200C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk) <

200C. TJ(pk) may be calculated from the data in Figure 4.

At high case temperatures, thermal limitations will reduce

the power that can be handled to values less than the

limitations imposed by second breakdown.

10,000

1.0

Figure 6. Small–Signal Current Gain

f, FREQUENCY (kHz)

10 2.0 5.0 10 20 50 100 200 1000

500

100

5000

hFE, SMALL-SIGNAL CURRENT GAIN

20

200

500

2000

1000

50

TJ = 25°C

VCE = 3.0 Vdc

IC = 10 A

1000

0.1

Figure 7. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

100 1.0 2.0 5.0 20 10010

C, CAPACITANCE (PF)

500

300

200

Cib

Cob

500.2 0.5

2N6284 (NPN)

2N6287 (PNP)

TJ = 25°C

700

2N6284 (NPN)

2N6287 (PNP)

2N6283 2N6284 2N6286 2N6287

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Figure 8. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

0.2 0.3 0.5 0.7 1.0 2.0 20

500

300

hFE, DC CURRENT GAIN

TJ = 150°C

25°C

-55°C

VCE = 3.0 V

200 7.0

NPN

2N6284 PNP

2N6287

20,000

5000

10,000

3000

2000

1000

3.0 5.0

IC, COLLECTOR CURRENT (AMP)

700

500

hFE, DC CURRENT GAIN

TJ = 150°C

25°C

-55°C

300

30,000

10,000

20,000

5000

3000

1000

7000

700

10

VCE = 3.0 V

0.2 0.3 0.5 0.7 1.0 2.0 207.03.0 5.0 10

7000

2000

Figure 9. Collector Saturation Region

VCE, COLLECTOREMITTER VOLTAGE (VOLTS)

3.0

IB, BASE CURRENT (mA)

2.6

2.2

1.8

1.4

1.0

VCE, COLLECTOREMITTER VOLTAGE (VOLTS)

3.0

IB, BASE CURRENT (mA)

0.5 1.0 2.0 3.0 5.0 7.0 50

2.6

2.2

1.8

1.4

IC = 5.0 A 10 A 15 A

1.0 0.7 3020 0.5 1.0 2.0 3.0 5.0 7.0 500.7 3020

IC = 5.0 A 10 A 15 A

10 10

TJ = 25°CTJ = 25°C

IC, COLLECTOR CURRENT (AMP)

VBE(sat) @ IC/IB = 250

V, VOLTAGE (VOLTS)

Figure 10. “On” Voltages

IC, COLLECTOR CURRENT (AMP)

V, VOLTAGE (VOLTS)

VBE(sat) @ IC/IB = 250

VCE(sat) @ IC/IB = 250

TJ = 25°C

VBE @ VCE = 3.0 V

VCE(sat) @ IC/IB = 250

TJ = 25°C

0.2 0.3 0.5 0.7 1.0 2.0 207.03.0 5.0

3.0

2.5

2.0

1.5

1.0

0.5

3.0

2.5

2.0

1.5

1.0

0.5 10 0.2 0.3 0.5 0.7 1.0 2.0 207.03.0 5.0 10

VBE @ VCE = 3.0 V

2N6283 2N6284 2N6286 2N6287

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+5.0

Figure 11. Temperature Coefficients

IC, COLLECTOR CURRENT (AMP)

0.2 0.3 1.0 2.0 3.0 5.0 7.0 20

V, TEMPERATURE COEFFICIENTS (mV/ C)°θ

+4.0

+3.0

+1.0

0

-4.0

-1.0

-2.0

-3.0

-5.0

θVB for VBE

*θVC for VCE(sat)

-55°C to + 25°C

25°C to 150°C

25°C to + 150°C

0.5 0.7

+5.0

IC, COLLECTOR CURRENT (AMP)

V, TEMPERATURE COEFFICIENTS (mV/ C)°θ

+4.0

+3.0

+1.0

0

-4.0

-1.0

-2.0

-3.0

-5.0

θVB for VBE

*θVC for VCE(sat)

NPN

2N6284 PNP

2N6287

*APPLIES FOR IC/IB ≤hFE@VCE  3.0V

250

-55°C to + 25°C

*APPLIES FOR IC/IB ≤hFE@VCE  3.0V

250

-55°C to + 25°C

25°C to 150°C

25°C to + 150°C

-55°C to + 25°C

10 0.2 0.3 1.0 2.0 3.0 5.0 7.0 200.5 0.7 10

+2.0 +2.0

REVERSE FORWARD

105

Figure 12. Collector Cut–Off Region

VBE, BASE-EMITTER VOLTAGE (VOLTS)

102

101

100

, COLLECTOR CURRENT (A)µIC

10-1

-0.2 -0.40+0.2+0.4+0.6

VCE = 30 V

TJ = 150°C

100°C

25°C

REVERSE FORWARD

103

104

-0.6 -0.8 -1.0 -1.2 -1.4

103

VBE, BASE-EMITTER VOLTAGE (VOLTS)

100

10-1

10-2

, COLLECTOR CURRENT (A)µIC

10-3

101

102

+0.2 +0.40-0.2-0.4-0.6 +0.6 +0.8 +1.0 +1.2 + 1.4

VCE = 30 V

TJ = 150°C

100°C

25°C

Figure 13. Darlington Schematic

NPN

2N6284

PNP

2N6287

BASE

COLLECTOR

EMITTER

 8.0 k  60

BASE

COLLECTOR

EMITTER

 8.0 k  60

2N6283 2N6284 2N6286 2N6287

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PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH

REFERENCED TO-204AA OUTLINE SHALL APPLY.

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A1.550 REF 39.37 REF

B--- 1.050 --- 26.67

C0.250 0.335 6.35 8.51

D0.038 0.043 0.97 1.09

E0.055 0.070 1.40 1.77

G0.430 BSC 10.92 BSC

H0.215 BSC 5.46 BSC

K0.440 0.480 11.18 12.19

L0.665 BSC 16.89 BSC

N--- 0.830 --- 21.08

Q0.151 0.165 3.84 4.19

U1.187 BSC 30.15 BSC

V0.131 0.188 3.33 4.77

A

N

E

C

K

–T– SEATING

PLANE

2 PL

D

M

Q

M

0.13 (0.005) Y M

T

M

Y

M

0.13 (0.005) T

–Q–

–Y–

2

1

UL

GB

V

H

CASE 1–07

TO–204AA (TO–3)

ISSUE Z

2N6283 2N6284 2N6286 2N6287

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8

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without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular

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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or

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2N6284/D

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