Advance Product Information
July 8, 2011
1
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
6.5 Watt Ku Band Power Amplifier TGA2514-FL
Primary Applications
•Ku band VSAT Transmitter
•Point to Point Radio
Key Features
•Frequency Range: 13 - 16 GHz
•38 dBm Nominal Psat
•24 dB Nominal Gain
•14 dB Nominal Return Loss
•0.25-um pHEMT 3MI Technology
•10 lead flange package
•Bias Conditions: 8 V @ 2.6 A Idq
•Package dimension: 0.45 x 0.68 x 0.12 in.
Measured Data
Bias Conditions: Vd = 8 V, Idq = 2.6A
Product Description
The TGA2514-FL provides 24 dB of gain
and 6.5W of output power across 13-16
GHz. The TGA2514-FL is designed
using TriQuint’s proven standard 0.25-µm
gate pHEMT production process.
This device is ideally suited for VSAT
Transmitter and Point to Point Radio
applications. The flange lead package
has a high thermal conductivity copper
alloy base.
Lead-Free & RoHS compliant
Evaluation Boards are available.
TGA2514-FL
DATE CODE
LOT CODE
Datasheet subject to change without notice.
Advance Product Information
July 8, 2011
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TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
TABLE I
Absolute Maximum Ratings 1/
Symbol Parameter Value Notes
V+
Positive Supply Voltage 9 V 2/
V-
Negative Supply Voltage Range -5V TO 0V
Id
Drain Current 3.8 A 2/
Ig
Gate Current Range -18 to 18 mA
Pin
Input Continuous Wave Power 21 dBm 2/
Tchannel
Channel Temperature 200 °C
1/ These ratings represent the maximum operable values for this device. Stresses beyond those listed
under “Absolute Maximum Ratings” may cause permanent damage to the device and/or affect device
lifetime. These are stress ratings only, and functional operation of the device at these conditions is not
implied.
2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed
maximum power dissipation listed in Table IV.
TGA2514-FL
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July 8, 2011
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TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
TABLE II
RF CHARACTERIZATION TABLE
(TA = 25°C, Nominal)
(Vd = 8V, Id = 2.6 A)
SYMBOL PARAMETER TEST
CONDITION TYPICAL UNITS
Gain Small Signal Gain f = 13-16 GHz 24 dB
IRL Input Return Loss f = 13-16 GHz 14 dB
ORL Output Return Loss f = 13-16 GHz 14 dB
Psat Saturated Power f = 13-16 GHz 38 dBm
TGA2514-FL
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July 8, 2011
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TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
TABLE III
Pow er Dissipation and Thermal Properties
Parameter Test Conditions Value
Maximum Power
Dissipation
Tbaseplate = 70 Pd = 33.3 W
Tchannel = 200 °C
Thermal Resistance, θjc Vd = 8V
Id = 2.6 A
Pd = 20.8 W
θjc = 3.9 °C/W
Tchannel = 151 °C
Tm = 9.3E5 hrs
Thermal Resistance, θjc
Under RF Drive
Vd = 8 V
Id = 3.6 A
Pout = 38 dBm
Pd = 22.5 W
θjc = 3.9 °C/W
Tchannel = 158 °C
Tm = 5.2E5 hrs
Mounting Temperature 30 Seconds 320 °C
Storage Temperature -65 to 150 °C
TGA2514-FL
1.E+04
1.E+05
1.E+06
1.E+07
1.E+08
1.E+09
1.E+10
1.E+11
1.E+12
1.E+13
1.E+14
1.E+15
25 50 75 100 125 150 175 200
Median Lifetime, Tm (Hours)
Channel Temperature, Tch (°C)
Median Lifetime (Tm) vs. Channel Temperature (Tch)
FET3
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July 8, 2011
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TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Bias Conditions: Vd = 8 V, Idq = 2.6A
Measured Fixture Data TGA2514-FL
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July 8, 2011
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TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Bias Conditions: Vd = 8 V, Idq = 2.6A
Measured Fixture Data TGA2514-FL
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July 8, 2011
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TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Measured Fixture Data
Bias Conditions: Vd = 8 V, Idq = 2.6A
TGA2514-FL
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TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Notes:
1. Vd must remain below 9V to comply with maximum rating value.
2. The drain supply must be connected to both sides of the evaluation block.
3. The cooling fan must be powered at all times when the device is under bias.
4. Connect fan supply red/black to +12V. It requires ~100mA.
Evaluation Board TGA2514-FL
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July 8, 2011
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TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Assembly Diagram
Note: Vg can be biased from either Pin 1 or Pin 5
2,4,7
Gnd
Vg
RF In
TGA2514-FL
310
8
1
RF Out
Vd
0.01 μF1 μF
1 μF0.01μF
6
Vd
0.01 μF
10 Ω
10 Ω
5
Vg
1 μF
0.01 μF
1 μF
TGA2514-FL
Advance Product Information
July 8, 2011
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TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Mechanical Drawing TGA2514-FL
Note: All dimensions are in inches with ±0.005 tolerance
N/C
TGA2514-FL
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July 8, 2011
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TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Ordering Information
Part Package Style
TGA2514-FL Flange (package bolted down)
TGA2514-FL
Assembly of a TGA2514-FL Package
1. Clean the board or module with acetone. Rinse with alcohol and DI water. Allow the circuit to fully dry.
2. To improve the thermal and RF performance, we recommend attaching a heat sink to the bottom of the
package and applying Indium alloy shim ( 80IN,15PB and 5AG. Part # IPN 10061) to the bottom of
TGA2514-FL.
3. Apply solder to each pin of TGA2514-FL.
4 Clean the assembly with alcohol.
.
