QS043-402-203822/5 94.0 80 0.25 12.0 11.0 12.0 11.0 12.0 7(G2) 6(E2) 7 6 3 5 4 5(E1) 4(G1) 3-M5 23.0 9 30 +1.0 - 0 .5 14 23.0 9 14 4 2-O6.5 2 1 4 18.0 (C1) 3 17.0 14 4-fasten tab #110 t=0.5 21.2 7.5 (E2) 2 48.0 16.0 14.0 (C2E1) 1 7 LABEL Dimension:mm ollector-mitter oltage ate-mitter oltage ollector ower issipation unction emperature ange torage emperature ange ollector urrent (erminal to ase ,inute) solation oltage odule ase to eatsink ounting orque usbar to ain erminal , . . (kgfcm) ollector-mitter ut-ff urrent ate-mitter eakage urrent . . . = 1200V,= 0V . = 20V,= 0V . ollector-mitter aturation oltage = 150A,= 15V . . ate-mitter hreshold oltage = 5V,= 150mA . . nput apacitance = 10V,= 0V,= 1MH 8,300 witching ime = 600V L= 4.0 G= 10.0 = 15V . . . . . . . . ise urn-on all urn-off ime ime ime ime orward urrent eak orward oltage everse ecovery ime . . . = 150A,= 0V . = 150A,= -10V i/t= 300A/s . . . . hermal mpedance iode th(j-c) Junction to Case Tc . . . QS043-402-203823/5 Fig.1- Output Characteristics (Typical) 12V VGE=20V T C=125C 300 VGE=20V 11V 15V 10V 200 150 9V 100 8V 12V 11V 15V 250 Collector Current I C (A) 250 Collector Current I C (A) Fig.2- Output Characteristics (Typical) T C=25C 300 10V 200 150 9V 100 50 8V 50 7V 7V 0 0 1 2 3 4 0 5 0 1 Collector to Emitter Voltage VCE (V) Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) Collector to Emitter Voltage V CE (V) Collector to Emitter Voltage V CE (V) 14 150A 12 10 8 6 4 2 0 0 4 8 12 16 150A 10 8 6 4 2 0 4 8 12 500 10 8 VCE =600V 6 400V 4 200V 100 2 200 400 600 800 0 1000 Capacitance C (pF) 600 0 0 20 Fig.6- Capacitance vs. Collector to Emitter Voltage (Typical) 14 200 16 100000 Gate to Emitter Voltage VGE (V) Collector to Emitter Voltage V CE (V) RL =4.0( TC=25C 300 12 Gate to Emitter Voltage VGE (V) 16 400 300A 12 0 20 IC=75A 14 Fig.5- Gate Charge vs. Collector to Emitter Voltage (Typical) 700 5 T C=125C Gate to Emitter Voltage VGE (V) 800 4 16 300A IC=75A 3 Fig.4- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) T C=25C 16 2 Collector to Emitter Voltage VCE (V) 30000 VGE=0V f=1MHZ T C=25C 10000 Cies 3000 Coes 1000 300 Cres 100 30 0.1 Total Gate Charge Qg (nC) 0.2 0.5 1 2 5 10 20 Collector to Emitter Voltage VCE (V) 50 100 200 QS043-402-203824/5 Fig.8- Series Gate Impedance vs. Switching Time (Typical) Fig.7- Collector Current vs. Switching Time (Typical) 10 2 VCC=600V RG=10 ( VGE=15V T C=25C Resistive Load Switching Time t (s) Switching Time t (s) 1.6 tOFF 1.2 0.8 tf 0 tr(VCE) 0 25 50 75 100 125 ton 10 Fig.10- Series Gate Impedance vs. Switching Time VCC=600V RG=10 ( VGE=15V T C=125C Inductive Load tON 0.1 VCC=600V IC=150A VGE=15V T C=125C Inductive Load 5 2 Switching Time t (s) tOFF tr(Ic) 0.03 1 toff 0.5 ton 0.2 tf 0.1 0.05 0 20 40 60 80 100 120 140 0.02 160 tr(IC ) 5 10 30 100 Series Gate Impedance RG (( ) Collector Current IC (A) Fig.11- Collector Current vs. Switching Loss Fig.12- Series Gate Impedance vs. Switching Loss 200 VCC=600V RG=10( VGE=15V T C=125C Inductive Load 30 Switching Loss ESW (mJ/Pulse) 40 Switching Loss ESW (mJ/Pulse) 100 Fig.9- Collector Current vs. Switching Time 1 0.3 30 Series Gate Impedance RG (( ) 10 tf tf tr(VCE ) Collector Current IC (A) 3 Switching Time t (s) toff 1 0.1 150 10 0.01 3 0.3 tON 0.4 VCC=600V IC=150A VGE=15V T C=25C Resistive Load EON 20 EOFF ERR 10 0 VCC=600V IC=150A VGE=15V T C=125C Inductive Load 100 EON 30 EOFF 10 ERR 3 0 50 100 150 200 5 Collector Current IC (A) 10 30 Series Gate Impedance RG (() 70 QS043-402-203825/5 Fig.13- Forward Characteristics of Free Wheeling Diode (Typical) Fig.14- Reverse Recovery Characteristics (Typical) 1000 Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns) 300 250 T C=125C 200 150 100 50 0 1 2 3 trr 300 100 IRrM 30 10 4 0 600 Forward Voltage VF (V) 1200 -di/dt (A/s) Fig.15- Reverse Bias Safe Operating Area (Typical) 1000 RG=10 ( , VGE=15V, T C=125C 500 200 Collector Current I C (A) 0 100 50 20 10 5 2 1 0.5 0.2 0.1 0 200 400 600 800 1000 1200 1400 Collector to Emitter Voltage V CE (V) Fig.16- Transient Thermal Impedance 1 Transient Thermal Impedance Rth (J-C) (C/W) Forward Current I F (A) T C=25C IF=150A T C=25C T C=125C FRD 5x10 -1 IGBT 2x10 -1 1x10 -1 5x10 -2 2x10 -2 1x10 -2 5x10 -3 2x10 -3 T C=25C 1x10 -3 1 Shot Pulse 5x10 -4 10 -5 10-4 10-3 10 -2 10 -1 Time t (s) 1 10 1 1800