BSP50 ... BSP52
1 Nov-30-2001
NPN Silicon Darlington Transistors
High collector current
Low collector-emitter saturation voltage
Complementary types: BSP60 ... BSP62 (PNP)
VPS05163
123
4
Type Marking Pin Configuration Package
BSP50
BSP51
BSP52
BSP 50
BSP 51
BSP 52
1 = B
1 = B
1 = B
2 = C
2 = C
2 = C
3 = E
3 = E
3 = E
4 = C
4 = C
4 = C
SOT223
SOT223
SOT223
Maximum Ratings
Parameter Symbol BSP50 BSP51 BSP52 Unit
Collector-emitter voltage VCEO 45 60 80 V
Collector-base voltage VCBO 60 80 90
Emitter-base voltage VEBO 5 5 5
DC collector current IC1 A
Peak collector current ICM 2
Base current mA100IB
Total power dissipation, TS = 124 °C Ptot 1.5 W
Junction temperature Tj150 °C
Storage temperature Tstg -65 ... 150
Thermal Resistance
Junction - soldering point1) RthJS
17 K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
BSP50 ... BSP52
2 Nov-30-2001
Electrical Characteristics at T
A
= 25°C, unless othertwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
BSP50
BSP51
BSP52
V(BR)CEO
45
60
80
-
-
-
-
-
-
V
Collector-base breakdown voltage
IC = 100 µA, IE = 0
BSP50
BSP51
BSP52
V(BR)CBO
60
80
90
-
-
-
-
-
-
Emitter-base breakdown voltage
IE = 100 µA, IC = 0 V(BR)EBO 5 - -
Collector-emitter cutoff current
VCE = VCEOmax, VBE = 0 ICES - - 10 µA
Emitter cutoff current
VEB = 4 V, IC = 0 IEBO - - 10
DC current gain 1)
IC = 150 mA, VCE = 10 V
IC = 500 mA, VCE = 10 V
hFE
1000
2000
-
-
-
-
-
Collector-emitter saturation voltage1
)
IC = 500 mA, IB = 0.5 mA
IC = 1 A, IB = 1 mA
VCEsat
-
-
-
-
1.3
1.8
V
Base-emitter saturation voltage 1)
IC = 500 mA, IB = 0.5 mA
IC = 1 A, IB = 1 mA
VBEsat
-
-
-
-
1.9
2.2
AC Characteristics
Transition frequency
IC = 100 mA, VCE = 5 V, f = 100 MHz fT- 200 - MHz
Turn-on time
IC = 500 mA, IB1 = IB2 = 0.5mA t(on) - 400 - ns
Turn-off time
IC = 500 mA, IB1 = IB2 = 0.5mA t(off) - 1500 -
1) Pulse test: t ≤ 300µs, D = 2%
BSP50 ... BSP52
3 Nov-30-2001
Switching time test circuit
Switching time waveform
1) Pulse test: t ≤ 300µs, D = 2%
BSP50 ... BSP52
4 Nov-30-2001
External resistance RBE = f (TA)**
VCB = VCEmax
** RBEmax for thermal stability
EHP00660BSP 50...52
10
050 ˚C
R
A
150
5
100
BE
10
7
6
10
5
5
T
Ω
Total power dissipation Ptot = f(TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
150
300
450
600
750
900
1050
1200
1350
mW
1650
Ptot
Permissible pulse load
Ptotmax / PtotDC = f (tp)
10
EHP00943BSP 50...52
-6
0
10
5
D
=
5
10
1
10
2
3
10
10
-5
10
-4
10
-3
10
-2
10
0
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
-1
s
5
totmax
tot
P
DC
P
p
t
tp
=
DT
tp
T
DC current gain hFE = f (IC)
VCE = 10V
EHP00661BSP 50...52
10
10 mA
5
FE
5
102
5
103
5
104
110 210 310 4
Ι
C
h
BSP50 ... BSP52
5 Nov-30-2001
Collector-emitter saturation voltage
IC = f (VCEsat), IB - parameter
EHP00663BSP 50...52
10
1
5
Ι
2
10
5
C
10
3
mA
V
CE sat
V
012
B
Ι
= 0.5 mA
4 mA
Base-emitter saturation voltage
IC = f (VBEsat), IB - parameter
EHP00664BSP 50...52
10
1
5
Ι
10
2
C
5
10
mA
3
1
0
BE sat
V
2V3
= 0.5 mA
B
Ι
4 mA
Transition frequency fT = f (IC)
VCE = 5V, f = 100MHz
EHP00662BSP 50...52
10
10 mA
f
C
10
MHz
10
T
5
Ι
12 3
10
3
2
10
1
5
